44TB2Q3 Search Results

Contextual Info: HITACHI/ LOGIC/ARRAYS/NEM HE HD74HC273 # DËJ 44Tb2Q3 QQIQHTt. Octal D-type Flip-Flops with Clear 92D This device contains 8 master-slave flip-flops with a common d o c k and common clear. Data on the D input having the | 10476 D T -4 6 -0 7 -1 1 PIN ARRANGEMENT

Contextual Info: HM6207H Series 5.0 V Supply 262,144-word x 1-bit High Speed CMOS Static RAM co" ;fj|?, > > > > > > > > ^ • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)

N15N

Contextual Info: ADE-203-412 Z HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20,1995 HITACHI T h e H M 71V 832 is a fe rro e le c tric RAM , or FRAM memory, organized as 32k-word x 8-bit FRAM® memory products from Hitachi combine

Contextual Info: HB56H164EJ Serie 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HM5118160I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-756A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM 51181601 Series are CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160I

am/256K-BIT

Contextual Info: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

HM514260DJI-7

Abstract: HM514260DJI-8 HM514260DLJI-7 HM514260DLJI-8 SC-640 Hitachi Scans-001
Contextual Info: HM514260DI Serie 262,144-word x 16-bit Dynamic RAM HITACHI ADE-203-710A Z Rev. 1.0 Feb.13, 1997 Description The Hitachi HM514260DI is a CMOS dynamic RAM organized as 262,144 words x 16 bits. The HM514260DI realizes higher density, higher performance, and various functions by employing 0.8 (am

HM514402

Abstract: M514402 HM514402bs HM514402BZ
Contextual Info: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h er p e rfo rm a n c e and v ario u s fu n c tio n s by

HM6708-2S

Abstract: HM6708JP-25 HM6708-20 HM6708P-20 HM6708P25 HM6708P-25
Contextual Info: HITACHI/ El E D L ÔGI C/ ARRAYS / ME f l 44=1^203 G Q l b 4 b ci b HM6708 Series- T—46—23— 10 65536-word x 4-bit High Speed Hi-BiCMOS Static RAM Feature] HM6708P • Super Fast Access Time : 20/25ns max. • Low Power Dissipation Operating: 350mW (typ.) (f = 50MHz)

R40 AH

Contextual Info: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are

Contextual Info: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A D E - 2 0 3 - 1 8 6 A Z R e v . 1 .0 M ay. 22, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2

Contextual Info: HM51W4265C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-477A Z Rev. 1.0 Jul. 31, 1996 Description The Hitachi HM51W4265C Series is a CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W4265C Series has realized higher density, higher performance and various functions by employing

Contextual Info: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

HM5118165J6

Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers

Contextual Info: HN62W448I Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-770A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62W448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has realized high speed normal access 120 ns on 3.3 V supply.

Contextual Info: HM5117805 Series 2,097,152-Word x 8-Bit Dynamic RAM HITACHI ADE-203-630 C Z Rev. 3.0 25 Feb 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized as 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power consumption. The HM5117805

Contextual Info: blE D • 4 4 R b 2 0 3 0 0 2 3 3 ^ 1 712 ■ H I T 2 HB56G25636 Series — - HI TA C H I / L O G I C / A R R A Y S / M E M 262,144-Word x 36-Bit High Density Dynamic RAM Module The HB56G25636B/SB is a 256 k x 36 dynamic RAM m odule, m ounted 2 pieces o f 4-M bit DRAM

Contextual Info: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asynchronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed

Contextual Info: HM5117800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-632C Z Rev. 3.0 Feb.24,1997 Description The Hitachi H M 5117800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The H M 5117800 offers Fast Page

HM530281

Abstract: HM530281TT-20 HM530281TT-25 HM530281TT-34 HM530281TT-45
Contextual Info: bl E D • H4Tb2D3 DD21S1Ö T2T IHIT2 HM530281 Series- Preliminary T- 331,776-word x 8-bit Frame Memory HI TA C H I / L O G I C / A R R A Y S / M E M The HM53028I series memory products provide completely asynchronous I/O and operate at the

hitachi eprom

Abstract: HN27C1024H HN27C1024HCC-10 HN27C1024HCC-12 HN27C1024HCC-85 HN27C1024HG-10 HN27C1024HG-12 HN27C1024HG-15 Hitachi Scans-001 LB203
Contextual Info: HN27C1024H Series 1M 64K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C1024H is a 1-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 16-bits. The HN27C1024H features fast address access times of 85,

HM51

Abstract: HM514800CJI-7 HM514800CJI-8 HM514800CLJI-7 Hitachi Scans-001
Contextual Info: HM514800CI Series HM51S4800CI Series 524,288-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-619A Z Rev. 1.0 Jul. 18, 1996 Description The Hitachi HM51(S)4800CI Series are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51(S)4800CI have realized higher density, higher performance and various functions by employing 0.8