CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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KS32P6632
Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor
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056KB
KS32P6632
NAND FLASH 64MB
sample code read and write flash memory
PCMCIA FLASH CARD 10MB
TSOP 14X20
lexar cf 64mb controller
Datasheet toshiba NAND Flash MLC
vending machine source code
pcmcia flash memory 8MB ata
VG365
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K6R1008V1D
Abstract: No abstract text available
Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify
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K6R1008V1D
64Kx16
100mA
32-TSOP2-400CF
002MIN
K6R1008V1D
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K6X4016C3F
Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.
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K6X4016C3F
256Kx16
44-TSOP2-400R
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
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K6R1004C1D
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.
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K6R1004C1D
256Kx4
32-SOJ-400
K6R1004C1D
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K6R4004C1D-JC
Abstract: K6R4004V1D K6R4016V1D-J
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4004C1D-JC
K6R4004V1D
K6R4016V1D-J
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MCP3909 application note
Abstract: PIC18 example codes Spi slave PIC18 example C18 codes ADC TM162JCAWG1 hOW TO READ mcp3909 Explorer-16 PIC18 external interrupt example codes PIC18 example codes SPI master mini project using PIC microcontroller with sources code LCD control using dsPIC33
Text: MCP3909 ADC Evaluation Board for 16-Bit MCUs User’s Guide 2008 Microchip Technology Inc. DS51777A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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MCP3909
16-Bit
DS51777A
DS51777A-page
MCP3909 application note
PIC18 example codes Spi slave
PIC18 example C18 codes ADC
TM162JCAWG1
hOW TO READ mcp3909
Explorer-16
PIC18 external interrupt example codes
PIC18 example codes SPI master
mini project using PIC microcontroller with sources code
LCD control using dsPIC33
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MR0A16A
Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
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MR0A16A
64Kx16
20-years
44-TSOP
48-BGA
MR0A16A
SRAM 64Kx16
MR0A16ACYS35
MR0A16AVYS35
MR0A16AYS35
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MR2A16A
Abstract: MR2A16ATS35C
Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The
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MR2A16A
16-Bit
MR2A16A
304-bit
MR2A16ATS35C
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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0.35mm pitch BGA
Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
MR4A08B,
EST356
0.35mm pitch BGA
MR4A08BCYS35R
MR4A08BC
mr4a08bcys
MR4A08BCYS35
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
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1000E-TC
16M-Bit
/1Mx16)
100ns
120ns
100pF
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
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1000B-TC
64M-Bit
/4Mx16)
100ns
120ns
100pF
44-TSOP2-400
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MR27T802F
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27V6402G
Abstract: OKI marking code
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27T3202F
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27T3202F-02-04
MR27T3202F
152-word
16-bit
304-word
MR27T3202F-xxxMA
44-pin
OP44-P-600-1
MR27T3202F-xxxTP
MR27T3202F
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MR27V802F
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27T1602F
Abstract: mr27t1602
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27V1602F
Abstract: oki marking OKI date code
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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K6T4016C3B-TB70
Abstract: K6T4016C3B-B
Text: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996
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K6T4016C3B
256Kx16
15/75mA
130mA
100pF
K6T4016C3B-TB70
K6T4016C3B-B
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54TSOP2
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'
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44TSOP2-400F
50-TSOP2-400F
54-TSOP2-400F
86-TSOP2-400F
54TSOP2
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KM6 II
Abstract: SRAM sheet samsung KM616
Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating
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256Kx16
256Kx16
44-TSOP
KM6164000A
KM6164000A
KM6 II
SRAM sheet samsung
KM616
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Scans-0012741
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM616V4002B/BL,
KM616V4002BI/BLI
256Kx16
KM616V4002BI/BLI
44-SOJ-400
44-TSO
P2-400F
Scans-0012741
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