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    4500V 1800A Search Results

    4500V 1800A Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    54242-111061800ALF Amphenol Communications Solutions BergStik®, Board to Board connector, 2.54mm (0.100in), Unshrouded vertical stacking Header, Surface Mount, Double Row, 6 Positions Visit Amphenol Communications Solutions
    G88MP1800AC1HR Amphenol Communications Solutions MICRO POWER PLUS board mount connector Visit Amphenol Communications Solutions
    54242-120061800ALF Amphenol Communications Solutions BergStik®, Board to Board connector, 2.54mm (0.100in), Unshrouded vertical stacking Header, Surface Mount, Double Row, 6 Positions Visit Amphenol Communications Solutions

    4500V 1800A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V


    Original     		PDF RM900DB-90S 20K/kW

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V


    Original     		PDF RM900DB-90S 20K/kW

    CM900HB-90H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V


    Original     		PDF CM900HB-90H CM900HB-90H

    DSF20545SF

    Abstract: DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45
    Text: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces March 1998 version, DS4152-3.1 DS4152-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives


    Original     		PDF DSF20545SF DS4152-3 DS4152-4 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45

    DSF20545SF45

    Abstract: DSF20545SF40 DSF20545SF DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 sine wave ups designing DS4152-4
    Text: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces March 1998 version, DS4152-3.1 DS4152-4.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives


    Original     		PDF DSF20545SF DS4152-3 DS4152-4 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF45 DSF20545SF40 DSF20545SF DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 sine wave ups designing

    Untitled

    Abstract: No abstract text available
    Text: JANUARY 1996 DSF20545SF DS4152-3.0 DSF20545SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.


    Original     		PDF DSF20545SF DS4152-3 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF40

    160nF

    Abstract: 4500a u4200 DIM900ESM45-F000
    Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)


    Original     		PDF DIM900ESM45-F000 DS5872-1 LN25831) DIM900ESM45-F000 450ty 160nF 4500a u4200

    DSF20545SF

    Abstract: DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45
    Text: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers


    Original     		PDF DSF20545SF DS4152-4 DS4152-5 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45

    Untitled

    Abstract: No abstract text available
    Text: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers


    Original     		PDF DSF20545SF DS4152-4 DS4152-5 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41

    Untitled

    Abstract: No abstract text available
    Text: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers


    Original     		PDF DSF20545SF DS4152-4 DS4152-5 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41

    RM900DB-90S

    Abstract: CC-124 4500V 1800A
    Text: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM900DB-90S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM900DB-90S ¡IF ……………………………………………… 900A ¡VRRM ……………………………………… 4500V


    Original     		PDF RM900DB-90S 20K/kW RM900DB-90S CC-124 4500V 1800A

    4500a

    Abstract: C6250 DFM900NXM45-F000 4500V 900A
    Text: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating


    Original     		PDF DFM900NXM45-F000 DS5887-1 LN24652) DFM900NXM45-F000 4500a C6250 4500V 900A

    Untitled

    Abstract: No abstract text available
    Text: GMKPg 3000-9uF Vishay ESTA MKP-High-Current Capacitors, Dry, Selfhealing, Segmented PART NO. ART. NO. GMKPg 3000-9uF 44701 NOMINAL RATINGS Capacitance/Tolerance Rated voltage Cn Un 9uF ± 5% 3000VDC 1500Vrms OVERVOLTAGES ACCORDING IEC 61071-1 1.1 x Un U1 3300V 30% of the


    Original     		PDF 3000-9uF 3000VDC 1500Vrms 30min/day) 100ms/day) 130mm 20-B-078 UL-94-V0 100000h

    4500v

    Abstract: diode 10000v UL-94-V0 US40-A 4500V 40A 3.3K M6
    Text: GMKPg 3000-9uF Vishay ESTA MKP-High-Current Capacitors, Dry, Selfhealing, Segmented PART NO. ART. NO. GMKPg 3000-9uF 44701 NOMINAL RATINGS Capacitance/Tolerance Rated voltage Cn Un 9uF ± 5% 3000VDC 1500Vrms OVERVOLTAGES ACCORDING IEC 61071-1 1.1 x Un U1 3300V 30% of the


    Original     		PDF 3000-9uF 3000VDC 1500Vrms 30min/day) 100ms/day) 130mm 20-B-078 UL-94-V0 100000h 4500v diode 10000v UL-94-V0 US40-A 4500V 40A 3.3K M6

    4500v

    Abstract: UL-94-V0 10000VAC mkph
    Text: GMKPg 3000-9uF Vishay ESTA MKP-High-Current Capacitors, Dry, Selfhealing, Segmented PART NO. ART. NO. GMKPg 3000-9uF 44701 NOMINAL RATINGS Capacitance/Tolerance Rated voltage Cn Un 9uF ± 5% 3000VDC 1500Vrms OVERVOLTAGES ACCORDING IEC 61071-1 1.1 x Un U1 3300V 30% of the


    Original     		PDF 3000-9uF 3000VDC 1500Vrms 30min/day) 100ms/day) 08-Apr-05 4500v UL-94-V0 10000VAC mkph

    Untitled

    Abstract: No abstract text available
    Text: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM900NXM45-F000 DS5887-1 DS5887-2 LN28310)

    GTO thyristor 1200V 50A

    Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
    Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES


    Original     		PDF

    160nF

    Abstract: DIM900ESM45-F000
    Text: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability


    Original     		PDF DIM900ESM45-F000 DS5872-1 LN24283) 160nF DIM900ESM45-F000

    SGCT

    Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
    Text: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H


    Original     		PDF CM800HA34H CM1200HA- CM1600HC- CM1800HC34H CM800HB50H CM1200HD50H CM800HB66H CM1200HB66H CM400HB- CM600HB90H SGCT mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT

    switch transistor

    Abstract: No abstract text available
    Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


    Original     		PDF DIM900ESM45-F000 DS5872-1 LN24743) DIM900ESM-F000 switch transistor

    Untitled

    Abstract: No abstract text available
    Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.2 November 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


    Original     		PDF DIM900ESM45-F000 DS5872-1 LN24998)

    DSF20545SF41

    Abstract: DSF20545SF45 DSF20545SF40
    Text: DSF20545SF M ITEL Fast Recovery Diode SEMICONDUCTOR DS4152 - 3.1 March 1998 Supersedes January 1996 version, DS4152 - 3.0 KEY PARAMETERS V RRM 4500V 1256A Jf AV 16000A FSM 1250|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.


    OCR Scan     		PDF DSF20545SF DS4152 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF40 DSF20545SF40

    LIC AGENTS DATA

    Abstract: No abstract text available
    Text: DSF20545SF M ITEL Fast Recovery Diode SEMICONDUCTOR DS4152 - 3.1 March 1998 Supersedes January 1996 version, DS4152 - 3.0 KEY PARAMETERS V RRM 4500V IF AV 1256A 16000A ^FSM 1250(lC Q 7.0|is t. APPLICATIONS • Induction Heating. ■ A.C. Motor Drives.


    OCR Scan     		PDF DSF20545SF DS4152 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF40 LIC AGENTS DATA

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY S E M I C O N D U C T O R S DS4152-3.0 DSF20545SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS V RR„ 4500V 1256A F AV 16000A FSM 1250^C • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.


    OCR Scan     		PDF DS4152-3 DSF20545SF 6000A DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF40 37bflS22