Untitled
Abstract: No abstract text available
Text: Bulletin I2095 rev. A 08/94 SD500N/R SERIES Stud Version STANDARD RECOVERY DIODES Features 475A Wide current range High voltage ratings up to 4500V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types TypicalApplications
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I2095
SD500N/R
SD500N/R
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Untitled
Abstract: No abstract text available
Text: Bulletin I2092 rev. C 04/00 SD553C.S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 6.0 µs recovery time 560A High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics
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I2092
SD553C.
DO-200AB
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I2071 rev. B 04/00 SD263C.S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features 375A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics
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I2071
SD263C.
DO-200AB
576ded
08-Mar-07
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DO200AB
Abstract: SD700C 7850-T
Text: Bulletin I2096 rev. B 04/00 SD700C.L SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 700A Wide current range High voltage ratings up to 4500V High surge current capabilities Diffused junction Hockey Puk version Case style DO-200AB B-PUK Typical Applications
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I2096
SD700C.
DO-200AB
DO200AB
SD700C
7850-T
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SDD67HK
Abstract: B1187 4500v DIODE 5035
Text: SDD67HK ast Reco y DIODE Fast Recov ry 40mm F ver 300A / 4500V The SDD67HK fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in
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SDD67HK
SDD67HK
125oC
B1187
4500v
DIODE 5035
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gct thyristor
Abstract: thyristor cdi FD500 4500v FD500JV-90DA
Text: MITSUBISHI SOFT RECOVERY DIODE FD500JV-90DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX φ3.5 ± 0.2 2.2 ± 0.2DEPTH ¡VRRM Repetitive peak reverse voltage . 4500V
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FD500JV-90DA
75MAX
gct thyristor
thyristor cdi
FD500
4500v
FD500JV-90DA
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CM900HB-90H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V
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CM900HB-90H
CM900HB-90H
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DGT408BRP
Abstract: DGT408BRP4540 AN4839
Text: DGT408BRP DGT408BRP Reverse Blocking Gate Turn-off Thyristor Target Information DS4415-2.1 February 2002 FEATURES KEY PARAMETERS • Reverse Blocking Capability ITCM ■ Double Side Cooling High Reliability In Service VDRM/VRRM 4500V ■ High Voltage Capability
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DGT408BRP
DS4415-2
DGT408BRP
DGT408BRP4540
AN4839
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Untitled
Abstract: No abstract text available
Text: NOVEMBER 1995 DG408BP45 DS4091-2.2 DG408BP45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V IT AV 320A 1000V/µs dVD/dt diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters.
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DG408BP45
DS4091-2
000V/Â
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ZL12
Abstract: SS14 ZL10 zp 35 ZP1500 zp200 ZL-10 ZP300 ZP1200 zt75
Text: ZP 普通整流管 Rectifier diodes 我公司可提供管壳额定通态平均 电流 10A-5000A，反向重复峰值电压 100V-4500V的整流二极管。结构上分 螺栓型和平板型。采用风冷或水冷两种 形式散热器，整流二极管主要应用于冶
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0A-5000A
00V-4500V
GB4939JB5837J
B5841-91
ZP100
ZP200
ZP300
ZP1500
ZP2000
ZP2500
ZL12
SS14
ZL10
zp 35
ZP1500
zp200
ZL-10
ZP300
ZP1200
zt75
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PT85QWx45
Abstract: No abstract text available
Text: PT85QWx45 PT85QWx45 Pulse Power Thyristor Switch Preliminary Information DS5334-1.2 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1670A ITSM 37000A dI/dt 22000A/µs FEATURES ● Double Side Cooling
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PT85QWx45
DS5334-1
7000A
2000A/
PT85QWx45
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KP300
Abstract: kp1500 KP600 KP800 KP500 KP1000 KP3000 kt60 GB4940-85JB5838-91JB5839-91 KP2500
Text: KP 普通晶闸管 Triode Thyristors 我公司可提供管壳额定通态平均电流 10A-3000A，断态反向重复电 压 100V-4500V 的普通晶闸管。结构上分螺栓型和平板型。采用风冷或 水冷两种形式散热器，主要用于直流传动交流串级调速、电解电源、电
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0A-3000A
00V-4500V
GB4940-85JB5838-91JB5839-91
KP100
KP150
KP200
KP300
KP2500
KP3000
KP300
kp1500
KP600
KP800
KP500
KP1000
KP3000
kt60
GB4940-85JB5838-91JB5839-91
KP2500
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PT40QPx45
Abstract: power thyristor
Text: PT40QPx45 PT40QPx45 Pulse Power Thyristor Switch Preliminary Information Replaces November 1999 version, DS5267-1.1 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 760A ITSM 13000A dI/dt
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PT40QPx45
DS5267-1
3000A
PT40QPx45
power thyristor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG4000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG4000GXH29 Unit in mm Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current *T RMS = 1900A Peak Turn-Off Current IT G Q M = 4000A Critical Rate of Rise of On-State Current : d i/d t = 500A/ jus
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SG4000GXH29
000V///S
ITM-4000A,
--10V,
SG4000GXH28.
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SG3000GXH29
Abstract: SG3000GXH 13-108D1A
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent
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SG3000GXH29
SG3000GXH29)
SG3000GXH29
SG3000GXH
13-108D1A
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SG3000GXH29
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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SG3000GXH23G
000V//
--25A,
SG3000GXH29.
SG3000GXH29
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Untitled
Abstract: No abstract text available
Text: SG2500GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2500GXH24 SG2500GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : Vj)ujjj=4500V R.M.S On-State Current : It (RMS) = 1200A Peak Turn-Off Current : I t G Q M = 2500A Critical Rate of Rise of On-State Current : d i/d t = 400A/ //s
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SG2500GXH24
SG2500GXH24)
000V///S
SG2SOOOXH24)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1000GXHH22 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling 2 - 03.5 ± 0.2 : V rrm = 4500V : ! f AV = 1000A
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1000GXHH22
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm = 4500V Note 1 Repetitive Peak Reverse Voltage : V r r m = 4000V R.M.S On-State Current : IT(RMS) = 800A
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SG3000GXH25
S120MAX.
300mA
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Untitled
Abstract: No abstract text available
Text: SiG E C P L E S S E Y S E M I C O N D U C T O R S DS4153-3.0 DSF21545SV FAST RECOVERY DIODE KEY PARAMETERS V 4500V y brm 3230A Jf AV 20000A FSM 1800HC Or 7.0|iS V APPLICATIONS • The D SF21545S V is a purpose designed freewheel diode to complement the D G 858B W G T O in Inverter
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DS4153-3
DSF21545SV
0000A
1800HC
SF21545S
21545S
Repetit00
000A/HS,
37b6522
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS
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DS4177-1
MDFB85
0000A
MDFB85
37bfl522
00301t
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage
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1200GXHH22
1300g
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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1200GXHH24
961001EAA1
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Untitled
Abstract: No abstract text available
Text: @ MITEL DNB65 Recifier Diode S E M IC O N D U C T O R DS4175 -1 .3 March 1998 Supersedes Septem ber 1996 version, DS4175 -1 .2 KEY PARAMETERS VRRM 4500V IF av, 2000A 'fs m 31000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■
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DS4175
DNB65
1000A
DNB65
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