Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS

MDFB85

Contextual Info: MDFB85 MDFB85 Fast Recovery Diode Advance Information Replaces January 2000 version, DS4177-2.0 DS4177-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 2130A IFSM 20000A Qr 2200µC trr 6.0µs • Freewheel Diode ■ D.C. Motor Drives ■ Welding

Contextual Info: MDFB85 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4177 - 1.3 Supersedes August 1995 version, DS4177 - 1.2 APPLICATIONS March 1998 KEY PARAMETERS 4500V 2130A F AV 20000A FSM 2200|lC VRRM Freewheel Diode. I D.C. M otor Drives. W elding. Qr I High Frequency R ectification.

Contextual Info: AUGUST 1995 MDFB85 DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 4500V 2130A 20000A 2200µC 6.0µs VRRM IF AV IFSM Qr trr • Freewheel Diode. ■ D.C. Motor Drives. ■ Welding. ■ High Frequency Rectification. ■ Power Supplies. FEATURES

MDFB85

Contextual Info: MDFB85 MDFB85 Fast Recovery Diode Advance Information Replaces March 1998 version, DS4177-1.3 DS4177-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 2130A IFSM 20000A Qr 2200µC trr 6.0µs • Freewheel Diode ■ D.C. Motor Drives ■ Welding

MDFB85

Contextual Info: MDFB85 MDFB85 Fast Recovery Diode Advance Information Replaces January 2000 version, DS4177-2.0 DS4177-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 2130A IFSM 20000A Qr 2200µC trr 6.0µs • Freewheel Diode ■ D.C. Motor Drives ■ Welding

3020 multimeter

Abstract: AN4506 AN4839 AN4853 MDFB85
Contextual Info: MDFB85 MDFB85 Fast Recovery Diode Advance Information Replaces March 1998 version, DS4177-1.3 DS4177-2.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 2130A IFSM 20000A Qr 2200µC trr 6.0µs APPLICATIONS • Freewheel Diode ■ D.C. Motor Drives ■ Welding

Contextual Info: MDFB85 MDFB85 Fast Recovery Diode Advance Information Replaces January 2000 version, DS4177-2.0 DS4177-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 2130A IFSM 20000A Qr 2200µC trr 6.0µs • Freewheel Diode ■ D.C. Motor Drives ■ Welding

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DYNEx

Abstract: DG306AE
Contextual Info: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Contextual Info: MDFBÔ5 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes August 1995 version, DS4177 -1 .2 DS4177 -1 .3 KEY PARAMETERS V RRM 4500V I F AV 2130A 20000A ^FSM 2200|iC Q APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. ■ Welding. ■ High Frequency Rectification.

M779b

Abstract: M771 bsr55 DYNEx
Contextual Info: Part and Ordering Number VRRM IRRM @TV ^R M S ) @ Tc = 65C 65’C UsM l2t @Tv) @Tvj vTO @Tvj rT @Tv, p th J-c) p th(c-hs) Tv, (V) (mA) (A) (A) (kA) (A2sx103) (V) (mü) (°C/W) (°C/W) CC) ESM4120* DF451 * 600-1000 600-1600 100 100 334 295 565 543 4.5 3.5

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half