Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.
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DSF11060SG
DS4217-2
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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Thyristor 865A
Abstract: AN4506 AN4839 AN4853 DF754 sine wave ups designing
Text: DF754 DF754 Fast Recovery Diode Replaces March 1998 version, DS4216-3.3 DS4216-4.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding
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DF754
DS4216-3
DS4216-4
DF754
M779b.
Thyristor 865A
AN4506
AN4839
AN4853
sine wave ups designing
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DS4217-2
Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
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DSF11060SG
DS4217-2
DS4548
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
ds4217
AN4506
DSF11060SG
DSF11060SG55
DSF11060SG56
DSF11060SG58
DSF11060SG60
DSF110
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DF685
Abstract: DS4303-1
Text: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability
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DF685
DS4303-1
DS4303-2
DF685
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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AN4506
Abstract: AN4839 AN4853 DF654
Text: DF654 DF654 Fast Recovery Diode Replaces March 1998 version, DS4214-3.5 DS4214-4.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 675A IFSM 6000A Qr 900µC trr 6.5µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding
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DF654
DS4214-3
DS4214-4
DF654
M779b.
AN4506
AN4839
AN4853
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DF752
Abstract: No abstract text available
Text: DF752 DF752 Fast Recovery Diode Replaces March 1998 version, DS4212-3.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 2500V IF AV 1050A IFSM 12000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding
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DF752
DS4212-3
DS4548
2000A
DF752
M779b.
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NDF653
Abstract: df653
Text: DF653 / NDF653 DF653 / NDF653 Fast Recovery Diode Replaces January 2000 version, DS4203-4.0 DS4203-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 1600V IF AV 660A IFSM 6500A Qr 45µC trr 1.4µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers
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DF653
NDF653
DS4203-4
DS4203-5
NDF653
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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DF754
Abstract: No abstract text available
Text: DF754 DF754 Fast Recovery Diode Replaces January 2000 version, DS4216-4.0 DS4216-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding
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DF754
DS4216-4
DS4216-5
DF754
M779b.
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AN4506
Abstract: AN4839 AN4853 DF752
Text: DF752 DF752 Fast Recovery Diode Replaces March 1998 version, DS4212-3.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 2500V IF AV 1050A IFSM 12000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding
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DF752
DS4212-3
DS4548
2000A
DF752
M779b.
AN4506
AN4839
AN4853
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DSF11060SG
Abstract: No abstract text available
Text: DSF11060SG DSF11060SG Fast Recovery DioGH DS4548 - JXO\ 20 /1 31791 KEY PARAMETERS
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DSF11060SG
DS4548
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
DSF11060SG
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DSF11060SG
Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
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Original
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DSF11060SG
DS4217-3
DS4548-4
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
DSF11060SG
1000A 100V power diode
DSF11060SG60
M779b
DSF11060SG55
DSF11060SG56
DSF11060SG58
DS4548
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1000A 100V power diode
Abstract: No abstract text available
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
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Original
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PDF
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DSF11060SG
DS4217-3
DS4548-4
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
1000A 100V power diode
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Untitled
Abstract: No abstract text available
Text: 5 f GEC PLESSEY S e p t e m b e r 19 9 5 S E M I C O N D U C T O R S DS4216-3.2 DF754 FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000^C Qr APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding.
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OCR Scan
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DS4216-3
DF754
M779b.
37bflS22
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Untitled
Abstract: No abstract text available
Text: së GEC P L E S S E Y o c o t b e r i 996 S E M I C O N D U C T O R S DS4214-3.4 DF654 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VBRM 3500V 675A F AV 6000A FSM 900|iC 6.5(is • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■
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OCR Scan
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PDF
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DS4214-3
DF654
DF654
M779b.
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Untitled
Abstract: No abstract text available
Text: DF654 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4214 - 3.5 Supersedes O ctober 1996 version, DS4214 - 3.4 March 1998 • Induction Heating. KEY PARAMETERS V RRM 3500V ■ A.C. M otor Drives. Jf AV ■ Inverters And C hoppers. ■ W elding. ■ High Frequency R ectification.
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OCR Scan
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PDF
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DF654
DS4214
DF654
M779b.
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Untitled
Abstract: No abstract text available
Text: DF654 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1996 version, DS4214 - 3.4 DS4214 - 3.5 APPLICATIONS • KEY PARAMETERS V RRM 3500V 675A Jf A V 6000A FSM 900|iC Q Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.
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OCR Scan
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PDF
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DF654
DS4214
DF654
M779b.
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Untitled
Abstract: No abstract text available
Text: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 - 3.3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.
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OCR Scan
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PDF
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DF754
DS4216
M779b.
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LIC AGENTS DATA
Abstract: No abstract text available
Text: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 -3 .3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf A V 8000A FSM 1000(lC Q, 6 .0 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■
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OCR Scan
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PDF
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DF754
DS4216
M779b.
LIC AGENTS DATA
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y SEPTEMBER 1995 SEMICONDUC TOR S DS4303-1.2 DF685 FAST RECOVERY DIODE KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650(lC Or APPLICATIONS vRRM • Snubber Diode For GTO Applications. 5|iS FEATURES ■ Double Side Cooling. ■ High Surge Capability.
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OCR Scan
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PDF
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DS4303-1
DF685
DF685
M779b.
37bflS22
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DS4217-2
Abstract: No abstract text available
Text: @ M ITEL DSF11060SG Fast Recovery Diode SE M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^rrm Snubber Diode For GTO Circuits. 6000V ^f a v 4 0 0 A 'f s m 4200A Qr 700|iC
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OCR Scan
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DS4217
DSF11060SG
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
DS4217-2
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Untitled
Abstract: No abstract text available
Text: DF752 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes July 1996 version, DS4212 - 3.3 DS4212 - 3.4 KEY PARAMETERS V RRM 2500V 1050A Jf A V 12000A FSM 1000(lC Q, 6 .0 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.
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OCR Scan
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DF752
DS4212
2000A
DF752
M779b.
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