k 3531 transistor
Abstract: No abstract text available
Text: ALH25AF48N Half-brick Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Dual Output 100W DC-DC Converter Rev02 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 Publishing Date: 20040928
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ALH25AF48N
Rev02
02inch
01inch
k 3531 transistor
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k 3531 transistor
Abstract: No abstract text available
Text: ALH25AF48 Half-brick Dual Output Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Output 100 Watt DC-DC Converter TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 www.astec.com
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ALH25AF48
-19www
-20www
k 3531 transistor
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lucent DC-DC POWER MODULE
Abstract: No abstract text available
Text: ALH25AF48 N Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V&3.3V Dual Output 100W DC-DC Converter (Rev01) TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 -1Publishing Date: 20020624
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ALH25AF48
Rev01)
lucent DC-DC POWER MODULE
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10KV SiC
Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA
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LTM4600
Abstract: No abstract text available
Text: LTM4600 10A High Efficiency DC/DC µModule Features n n n n n n n n n n n n n n Description Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current
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LTM4600
com/LTM4600
4600fd
LTM4600
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Power MOSFET, toshiba
Abstract: toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004
Text: 2004-3 PRODUCT GUIDE Power MOSFETs TPC Series semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Power MOSFETs TPC Series CONTENTS 1. Overview. p.4-5 2. Features . p.6-15
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BCE0019A
BCE0019B
Power MOSFET, toshiba
toshiba f5d
NPN S2e
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
TPCA8103
438B
MOSFET TOSHIBA
TPCP8402
Power MOSFET toshiba
TPC6004
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R2A11301FT
Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV
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/533MHz
BGA-832
BGA-472
BGA-429
BGA-720
BGA-653
R2A11301FT
SH7766
R2A25108KFP
2SC5664
PowerVR SGX530
PowerVR SGX540
car ecu wiring system service manual
R2A25104KFP
V850E2 fx4
DJ4 renesas
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5mm RGB led 4 pin
Abstract: 5mm rgb led pic12f675 led rgb smd s6 vishay S1 push to on switch introduction rgb smd led 1K 1/4W Resistor TACT Switch with LED smd rgb red 5mm LED with holder
Text: EV-132 AAT4297 EVAL: Dual RGB Controller Introduction The AAT4297 EVAL board demonstrates the operation of the AAT4297 SmartSwitch . This device has six low side N-channel load switches, which are serially controlled. The AAT4297 operates from 1.8V to 5.5V,
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EV-132
AAT4297
AAT3110
EV-132
5mm RGB led 4 pin
5mm rgb led
pic12f675 led rgb
smd s6 vishay
S1 push to on switch introduction
rgb smd led
1K 1/4W Resistor
TACT Switch with LED
smd rgb
red 5mm LED with holder
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AAT4282A
Abstract: AAT4282A-1 AAT4282A-2 AAT4282AIPS-3-T1
Text: AAT4282A Dual Slew Rate Controlled Load Switch General Description Features The AAT4282A SmartSwitch is a member of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. The AAT4282A is a dual P-channel MOSFET power switch designed
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AAT4282A
AAT4282A
AAT4282A-1
AAT4282A-2
AAT4282AIPS-3-T1
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AAT4252A
Abstract: AAT4252A-3 AAT4252AITP-3-T1
Text: AAT4252A Dual Slew Rate Controlled Load Switch General Description Features The AAT4252A SmartSwitch is a dual P-channel MOSFET power switch designed for high-side loadswitching applications. Each MOSFET has a typical RDS ON of 105mΩ, allowing increased load switch
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AAT4252A
AAT4252A
500ns
AAT4252A-3
AAT4252AITP-3-T1
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schematic diagram ac voltage regulator
Abstract: schematic diagram ac power regulator schematic diagram voltage regulator for AC to AC schematic diagram ac regulator keithley 2400 schematic FLUKE 36 schematic diagram FLUKE 715 schematic diagram Tektronix 464 HP33120A Fluke 189
Text: EV-137 AAT3244 EVAL: 300mA Adjustable Dual CMOS Low Voltage LDO Linear Regulator Introduction The AAT3244 evaluation board provides a platform for test and evaluation of the AAT3244 Dual CMOS Low Voltage LDO Linear Regulator. The evaluation board demonstrates suggested size and placement of external
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EV-137
AAT3244
300mA
TSOPJW-12
EV-137
schematic diagram ac voltage regulator
schematic diagram ac power regulator
schematic diagram voltage regulator for AC to AC
schematic diagram ac regulator
keithley 2400 schematic
FLUKE 36 schematic diagram
FLUKE 715 schematic diagram
Tektronix 464
HP33120A
Fluke 189
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Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR862DP
2002/95/EC
SiR862DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7489DP
Si7489DP-T1-E3
Si7489DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4654DY
Si4654DY-T1-E3
Si4654DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm
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SiR870DP
SiR870DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4477DY
2002/95/EC
Si4477DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4477DY
2002/95/EC
Si4477DY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4654DY
Si4654DY-T1-E3
Si4654DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm
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SiR870DP
SiR870DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom
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SiR870ADP
SiR870ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR862DP
2002/95/EC
SiR862DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7489DP
Si7489DP-T1-E3
Si7489DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 VDS (V) 100 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm
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SiR870ADP
2002/95/EC
SiR870ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4477DY
2002/95/EC
Si4477DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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