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    SI4654DY Search Results

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    SI4654DY Price and Stock

    Vishay Siliconix SI4654DY-T1-E3

    MOSFET N-CH 25V 28.6A 8SO
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    DigiKey SI4654DY-T1-E3 Reel
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    Vishay Siliconix SI4654DY-T1-GE3

    MOSFET N-CH 25V 28.6A 8SO
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    SI4654DY-T1-GE3 Digi-Reel 1
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    RS SI4654DY-T1-GE3 Bulk 100
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    Vishay Intertechnologies SI4654DY-T1-GE3

    Trans MOSFET N-CH 25V 28.6A 8-Pin SOIC N T/R
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    Verical SI4654DY-T1-GE3 1,250 19
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    Arrow Electronics SI4654DY-T1-GE3 Cut Strips 1,250 25 Weeks 1
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    Bristol Electronics SI4654DY-T1-GE3 2,400
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    Quest Components SI4654DY-T1-GE3 1,920
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    SI4654DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4654DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 28.6A 8-SOIC Original PDF
    SI4654DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 28.6A 8-SOIC Original PDF

    SI4654DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si4654

    Abstract: Si4654DY Si4654DY-T1-E3
    Text: New Product Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 29 nC


    Original     		Si4654DY Si4654DY-T1-E3 08-Apr-05 si4654 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 11-Mar-11 PDF

    SI4654DY

    Abstract: No abstract text available
    Text: New Product Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 29 nC


    Original     		Si4654DY Si4654DY-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S0901

    Abstract: Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 18-Jul-08 S0901 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    80586

    Abstract: Si4654DY S-80586
    Text: SPICE Device Model Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4654DY 18-Jul-08 80586 S-80586 PDF

    AN609

    Abstract: Si4654DY 720132
    Text: Si4654DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4654DY AN609 27-Nov-07 720132 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF