465A MARKINGS Search Results

465A MARKINGS Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

465A MARKINGS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TFS465A Abstract: No abstract text available Text: TFS465A.doc version 1.1 VI TELEFILTER 25.07.03 Filter specification TFS 465A 1/5 Measurement condition Ambient temperature: 23 °C Input power level: 0 dBm Terminating impedances: input: 50 Ω output: 50 Ω Characteristics Remark: The maximum of the pass band attenuation amax is defined as the insertion loss ae. The nominal frequency fN is fixed at 465,0 MHz without	Original	TFS465A	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
MRF18085A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 5, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF18085A MRF18085ALR3 MRF18085ALSR3 MRF18085A	PDF
MRF18085ALS Abstract: MRF18085A Text: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF18085A MRF18085AR3 MRF18085ALSR3 MRF18085ALS	PDF
"RF power MOSFETs" Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206 Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206	PDF
Z1 Transistor Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A MRF18060ALSR3 MRF18060A Z1 Transistor smd transistor marking j2 smd transistor marking z3 465A MARKINGS	PDF
transistor marking PB C8 Abstract: NI-780S SMD transistor 2x sot 23 Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B GSM1930 MRF18060BLSR3 transistor marking PB C8 NI-780S SMD transistor 2x sot 23	PDF
MRF18085A Abstract: F 5M 365 R AN1955 GSM1800 MRF18085ALR3 MRF18085ALSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF18085A MRF18085ALR3 MRF18085ALSR3 MRF18085ALR3 MRF18085A F 5M 365 R AN1955 GSM1800 MRF18085ALSR3	PDF
MRF18085A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF18085A MRF18085AR3 MRF18085ALSR3	PDF
MRF18085A Abstract: No abstract text available Text: Document Number: MRF18085A Rev. 8, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/	Original	MRF18085A MRF18085ALSR3 MRF18085A	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B GSM1930 MRF18060BLSR3	PDF
MRF18085A Abstract: AN1955 EB212 MRF18085ALSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/	Original	MRF18085A MRF18085ALSR3 MRF18085A AN1955 EB212 MRF18085ALSR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF18060B Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060BLR3	PDF
motorola regulator Abstract: 103 potentiometer MRF18060A Text: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A GSM1805 MRF18060AR3 MRF18060ALSR3 motorola regulator 103 potentiometer	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060B	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
BC847 Abstract: GSM1900 LP2951 MRF18060 MRF18060B MRF18060BLR3 MRF18060BLSR3 SMD Transistor z6 RF Power Transistor MRF18060B MRF18060 465A MARKINGS Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 8, 5/2006 RF Power Field Effect Transistor MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060BLR3 BC847 GSM1900 LP2951 MRF18060 MRF18060B MRF18060BLSR3 SMD Transistor z6 RF Power Transistor MRF18060B MRF18060 465A MARKINGS	PDF
MARKING WB1 Abstract: EB212 MRF9085 MRF9085LSR3 MRF9085LS Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9085LSR3 MRF9085 MARKING WB1 EB212 MRF9085LSR3 MRF9085LS	PDF
MRF18060A Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060A MRF18060ALR3 MRF18060ALSR3 MRF18060ALR3 MRF18060A transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALSR3 smd z5 transistor	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21060 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060R3 MRF21060SR3	PDF
FERRITE BEAD 1000 OHM 0805 Abstract: AN1955 BC847 LP2951 MRF18085B MRF18085BLR3 MRF18085BLSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and	Original	MRF18085B MRF18085BLR3 MRF18085BLSR3 MRF18085BLR3 FERRITE BEAD 1000 OHM 0805 AN1955 BC847 LP2951 MRF18085B MRF18085BLSR3	PDF
AN1955 Abstract: BC847 LP2951 MRF18085B MRF18085BLR3 MRF18085BLSR3 J476 transistor marking z9 Text: Freescale Semiconductor Technical Data Document Number: MRF18085B Rev. 6, 5/2006 RF Power Field Effect Transistors MRF18085BLR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and	Original	MRF18085B MRF18085BLR3 MRF18085BLSR3 MRF18085BLR3 AN1955 BC847 LP2951 MRF18085B MRF18085BLSR3 J476 transistor marking z9	PDF
CDR33BX104AKWS Abstract: MRF21060 MRF21060LR3 MRF21060LSR3 Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3 CDR33BX104AKWS MRF21060 MRF21060LSR3	PDF

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465A MARKINGS Search Results

465A MARKINGS Result Highlights (5)

465A MARKINGS Datasheets Context Search

TFS465A

Untitled

MRF18085A

MRF18085ALS

"RF power MOSFETs"

Z1 Transistor

transistor marking PB C8

MRF18085A

MRF18085A

MRF18085A

Untitled

MRF18085A

Untitled

motorola regulator

Untitled

Untitled

BC847

MARKING WB1

MRF18060A

Untitled

Untitled

FERRITE BEAD 1000 OHM 0805

AN1955

CDR33BX104AKWS