Untitled
Abstract: No abstract text available
Text: International ioR Rectifier IRLR024 IRLU024 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating Surface Mount IRLR024 Straight Lead (IRLU024) Available in Tape & Reel Logic-Level Gate Drive PD-9.625A 46S5452 DDlS'iSfl S7fl * I N R INTERNATIONAL R E C T IF IE R
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IRLR024
IRLU024
IRLR024)
IRLU024)
46S5452
150KQ
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FR07* diode
Abstract: FR07
Text: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi
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IRFN450
415ft
415C2
4ASS452
24TGb
FR07* diode
FR07
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V
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IR2113
IR2113S
IRFBC30)
IR2113STj
IRFBC20)
IRFPE50)
IRFBC40)
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Untitled
Abstract: No abstract text available
Text: International Rectifier • 1,8551,52 DDlbDls b,4a* INR PD" 06 IRLZ44S HEXFET P ow er M O S F E T INTERNATIONAL RECTIFIER • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive bSE H ^ dss - 60V • RDS on Specified at Vgs=4V & 5V
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IRLZ44S
SMD-220
0Glb023
lt36VTlcÃ
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diodo 007
Abstract: No abstract text available
Text: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss =
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1267G
IRF7504
46SS4S2
diodo 007
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IRFIBC30G
Abstract: No abstract text available
Text: I 4Ô55452 0015244 b07 « I N R International i»R Rectifier IRFIBC30G INTERNATIONAL RECTIFIER HEXFET Pow er M O S F E T • • • • • PD-9.851 Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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IRFIBC30G
5S452
IRFIBC30G
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Untitled
Abstract: No abstract text available
Text: International K?R Rectifier HEXFET Power MOSFET • • • • • • • 4655452 0D14R14 35*1 IINR PD-9.736 IRF9Z14 IN T E R N A T IO N A L bS E R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Tem perature Fast Switching
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0D14R14
IRF9Z14
O-220
55M52
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Untitled
Abstract: No abstract text available
Text: 4655452 International ior Rectifier HEXFET Power MOSFET • • • • • • 0014544 4b2 * I N R PD-9.566B IRC634 INTERNATIONAL b5E R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC634
0-45C2
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E.78996
Abstract: 78996 L220A 4525 GE DIODE RK 69 ir e.78996 D183 D184 D185 D186
Text: • International [¡^Rectifier 4Ô5S45B OOlbbSa 712 ■ INR s e r ie s irk.l56, .L71, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules INTERNATIONAL RECTIFIER bSE » Features ■ ■ ■ ■ ■ ■ ■ ■ Fast recovery tim e characteristics Electrically isolated base plate
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7450 IRH8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7450
IRH8450
1x105
1x10s
4fl5545S
IRH7450,
IRH8450
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I348
Abstract: TMDB IRFM360 SS452 I-348
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM36Q ;n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e H E X F E T ® technology is the key to International Part N um ber
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IRFM360
IRFM360D
IRFM360U
O-254
MIL-S-19500
I348
TMDB
IRFM360
SS452
I-348
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Untitled
Abstract: No abstract text available
Text: International [iggRectifier P D - 9.781 A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGP420U
O-247AC
5545E
00203flfl
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Transistor TT 2144
Abstract: SMP220
Text: Preliminary Data Sheet 6.039 IN T E R N A T IO N A L R E C T IF IE R I O R FULLY P R O _T E C T E D — _ D M O S P O W E R S W IT C H SMARTFET Transistor General Description: Rating Summary: The IRSF3011 is a 3 terminal monolithic SMART POWER MOSFET with built in short circuit, over
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IRSF3011
IRSF3011F
TQ-220
Transistor TT 2144
SMP220
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Untitled
Abstract: No abstract text available
Text: International ïôri Rectifier Data Sheet No. 1.039 PVDZ172N Microelectronic HEXFET POWER MOSFET PHOTOVOLTAIC RELAY Power IC Relay Single Pole, Normally Open 0-60V DC, 1.5A General Description PVDZ172N Features The PVDZ172N Photovoltaic Relay is a single
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PVDZ172N
PVDZ172N
250m0
0023b54
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-1.030B IN T E R N A T IO N A L R E C T IF IE R SERIES PVA30 Microelectronic Power IC Relay Single Pole, 40 mA 0-300V AC/DC BOSFET Photovoltaic Relay BOSFET Power IC • 1010 Operations ■ 25n Sec Operating Time ■ Low Output Capacitance ■
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PVA30
000V/psec
D2b73S
PVA30
4A5545E
Q02b73b
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TDA 5760
Abstract: TDA 5500
Text: Bulletin 12071/A International ïü Rectifier SD263C.S50L SERIES FAST RECOVERY DIODES Hockey Puk Version Features High power F A S T recovery diode series 4 .5 ps recovery tim e High voltage ratings up to 4 5 0 0 V High current capability O p tim ized turn on and turn off characteristics
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12071/A
SD263C.
55very
D-676
00E7433
465545E
D-677
TDA 5760
TDA 5500
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1RF9640
Abstract: IRF9640
Text: International |g»i Rectifier HEXFET P o w e r M O S F E T • • • • • • • 4855455 0Ql4 2 t37 - 1NR PD9422B IRF9640 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF9640
-200V
1RF9640
IRF9640
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Untitled
Abstract: No abstract text available
Text: International PD91272 ^Rectifier_ IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V DSS = 2 5 0 V ^D S o n = 1 - 1 ^
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IRFD224
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16RIA40M
Abstract: FULL WAVE RECTIFIER and waveforms 10RIA10 22ria120 T0208AA 16ria80 S80 Rectifier 10RIA 16RIA 22RIA
Text: 3 jO OCT 0 3 1990 IN T E R N A T IO N A L R E C T IF IE R STE Data Sheet No. PD-3.060C 4A55M 5E 0 0 1 2 ^ 0 3 D Ï3 - TS1 H I N R INTERNATIONAL RECTIFIER 1ORIA, 16RIA, SERIA, S5RIA SERIES 25A, 35A And 40A RMS Glass-passivated SCRs Major Ratings and Characteristics
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10RIA,
16RIA,
10RIA
16RIA
22RIA
25RIA
16RIA40M
FULL WAVE RECTIFIER and waveforms
10RIA10
22ria120
T0208AA
16ria80
S80 Rectifier
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Untitled
Abstract: No abstract text available
Text: International rai Rectifier Provisional Data S heet P D -9 .1 192 IRGTIN075K06 "H A LF-B R ID G E " IG B T IN T-A -PAK Low conduction loss IG B T V CE = 6 0 0 V lc = 75A •Rugged Design * Simple gate-drive * Switching-Loss Rating includes all "tail" losses
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IRGTIN075K06
10pis
D-17for
Outline11
C-1006
46S5452
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D304 diode
Abstract: tr/P45/D304 diode
Text: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility
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SSM52
QQlb771
46S5452
10ohms.
D304 diode
tr/P45/D304 diode
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f9530n
Abstract: No abstract text available
Text: ft V- International ZOR Rectifier pd-m«» IR F9530N preliminary HEXFET^ Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
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F9530N
O-220
f9530n
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IRGBC40
Abstract: No abstract text available
Text: INTER NAT IONAL RECTIFIER SbE D • HfiSSMSS QDIQbOT 0 ■ Data Sheet No. PD-9.627A T -3 °l -03 International INSULATED GATE BIPOLAR TRANSISTOR S ^ lR G C t if te r IRGBC40 6QOV, 4QA FEATURES 600V, 40A, TO-220AB IGBT International Rectifier's IRG series of Insulated Gate
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IRGBC40
O-220AB
SS452
46S5452
0010bl4
IRGBC40
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Untitled
Abstract: No abstract text available
Text: International [re s ] Rectifier PD — IR L P 2 5 0 5 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching
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4751897IR
3150utram
10-02Tan
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