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    Ohmite Mfg Co ARC3.54-80M-J-L

    RES 80M OHM 5% 54W
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    Eaton Corporation 80MJ30-7

    Specialty Fuses 80AMP 415V AC TYPE J
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    Mouser Electronics 80MJ30-7
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    480MJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description


    Original     		PDF ZXMS6004SG 480mJ ZXMS6004SG Log62-3154 D-81541

    ZXMS66004SGTA

    Abstract: zxms6004 design ideas TS16949 ZXMS6004SG zxms66004
    Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description


    Original     		PDF ZXMS6004SG 480mJ ZXMS6004SG Level1362-3154 D-81541 ZXMS66004SGTA zxms6004 design ideas TS16949 zxms66004

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Features and Benefits ADVANCE INFORMATION Product Summary •  Continuos drain source voltage On-state resistance 60V 500mΩ   Nominal load current VIN = 5V Clamping Energy


    Original     		PDF ZXMS6004SG 480mJ ZXMS6004SG DS32247

    50n6s2d

    Abstract: FGH50N6S2D 50n6s2 LD26 150a 400v diode bridge fgh50n6s
    Text: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau


    Original     		PDF FGH50N6S2D FGH50N6S2D 100kHz 200kHZ 50n6s2d 50n6s2 LD26 150a 400v diode bridge fgh50n6s

    50N6S2

    Abstract: 50N6 FGH50N6S2 FGH50N6S2D LD26 TA49392
    Text: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices


    Original     		PDF FGH50N6S2 FGH50N6S2 100kHz 50N6S2 50N6 FGH50N6S2D LD26 TA49392

    Untitled

    Abstract: No abstract text available
    Text: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau


    Original     		PDF FGH50N6S2D FGH50N6S2D 100kHz 200kHZ

    50N6S2D

    Abstract: 50N6 FGH50N6S2D TA49344 TA49392 LD26
    Text: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau


    Original     		PDF FGH50N6S2D FGH50N6S2D 100kHz 200kHZ 50N6S2D 50N6 TA49344 TA49392 LD26

    IRFM054

    Abstract: No abstract text available
    Text: IRFM054 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)


    Original     		PDF IRFM054 254AA IRFM054

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6004SG Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current VIN = 5V


    Original     		PDF ZXMS6004SG ZXMS6004SG 480mJ DS33610

    IRF054SMD

    Abstract: No abstract text available
    Text: SEME IRF054SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRF054SMD 00A/ms 300ms, IRF054SMD

    IRFN054SMD

    Abstract: No abstract text available
    Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		PDF IRFN054SMD 00A/ms 300ms, IRFN054SMD

    ZXMS6006SG

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V


    Original     		PDF ZXMS6006SG 480mJ AEC-Q101 DS35141 ZXMS6006SG

    IRF054SM

    Abstract: No abstract text available
    Text: SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A 0.027W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


    Original     		PDF IRF054SM 220SM 00A/ms 300ms, IRF054SM

    50N6S2

    Abstract: FGH50N6S2 FGH50N6S2D LD26
    Text: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices


    Original     		PDF FGH50N6S2 FGH50N6S2 100kHz 200kHZ 50N6S2 FGH50N6S2D LD26

    NTE2923

    Abstract: No abstract text available
    Text: NTE2923 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		PDF NTE2923 NTE2923

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6006SG ADV AN CE I N FORM AT I ON 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •


    Original     		PDF ZXMS6006SG 480mJ ZXMS6006SG DS35141

    4600 mosfet

    Abstract: MOSFET 20V 45A
    Text: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A Ω 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


    Original     		PDF IRFN054 220SM 300ms, 4600 mosfet MOSFET 20V 45A

    50n6s2

    Abstract: TA49392 FGH50N6S2 FGH50N6S2D LD26 igbt full h bridge 25A 0640
    Text: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices


    Original     		PDF FGH50N6S2 FGH50N6S2 100kHz 200kHZ 50n6s2 TA49392 FGH50N6S2D LD26 igbt full h bridge 25A 0640

    Untitled

    Abstract: No abstract text available
    Text: S EM E IRF054SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRF054SMD 00A/ms 300ms,

    Untitled

    Abstract: No abstract text available
    Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		PDF IRFN054SMD 00A/ms 300ms,

    Untitled

    Abstract: No abstract text available
    Text: im iFFI im SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 0.25 3.5 3.0 V Dss 60V I. *D(cont) 45A W -» i ^DS(on) 0.027Q A CD FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE TT • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan     		PDF IRF054SM T0-220SM 300ms,

    t1ls

    Abstract: No abstract text available
    Text: mi É tti INI IRFM054 SEME LAB MECHANICAL DATA N-CHANNEL POWER MOSFET D im e nsio ns in mm inches 1 3 .5 9 ( 0 .5 3 5 ) 6 .3 2 ( 0 . 2 4 9 ) 1 3 .8 4 ( 0 .5 4 5 ) 6 .6 0 ( 0 . 2 6 0 ) 3 .5 3 ( 0 . 1 3 9 ) 3 .7 8 ( 0 . 1 4 9 ) " - *] 1 . 0 2 ( 0 .0 4 0 )


    OCR Scan     		PDF IRFM054 -254AA t1ls

    Untitled

    Abstract: No abstract text available
    Text: Mil W llll : SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET VDSS 11.5 2.0 3.5 60V 45A 0.027Q 0.25 3.5 I D(cont) 3.0 ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan     		PDF IRFN054 O-220SM 480mJ 300ms,

    Untitled

    Abstract: No abstract text available
    Text: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 0.25 3.0 V DSS 60V I D(cont) 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.


    OCR Scan     		PDF IRFN054 O-220SM 00A/p 300ms,