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Infineon Technologies AG AIGB50N65H5ATMA1 DISCRETE SWITCHES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AIGB50N65H5ATMA1	Digi-Reel	2,535		1	1 $5.96 10 $3.989 100 $5.96 1000 $2.39774 10000 $2.39774	Buy Now
	AIGB50N65H5ATMA1	Cut Tape	2,535		1	1 $5.96 10 $3.989 100 $5.96 1000 $2.39774 10000 $2.39774	Buy Now
	AIGB50N65H5ATMA1	Reel	2,000		1,000	1 - 10 - 100 - 1000 $2.31588 10000 $2.31588	Buy Now
Avnet Americas	AIGB50N65H5ATMA1	Reel		26 Weeks	1,000	1 - 10 - 100 - 1000 $2.57525 10000 $2.57525	Buy Now
Rochester Electronics	AIGB50N65H5ATMA1		5,000		1	1 $2.57 10 $2.57 100 $2.42 1000 $2.18 10000 $2.18	Buy Now
EBV Elektronik	AIGB50N65H5ATMA1			27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NTB150N65S3HF MOSFET N-CH 650V 24A D2PAK-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTB150N65S3HF	Cut Tape	1,540		1	1 $5.92 10 $3.967 100 $5.92 1000 $5.92 10000 $5.92	Buy Now
	NTB150N65S3HF	Digi-Reel	1,540		1	1 $5.92 10 $3.967 100 $5.92 1000 $5.92 10000 $5.92	Buy Now
	NTB150N65S3HF	Reel	800		800	1 - 10 - 100 - 1000 $2.39063 10000 $2.39063	Buy Now
Avnet Americas	NTB150N65S3HF	Reel		18 Weeks	800	1 - 10 - 100 - 1000 $2.33325 10000 $2.2491	Buy Now
Rochester Electronics	NTB150N65S3HF		154		1	1 $2.66 10 $2.66 100 $2.5 1000 $2.26 10000 $2.26	Buy Now
Richardson RFPD	NTB150N65S3HF				800	1 - 10 - 100 - 1000 $2.39 10000 $2.39	Buy Now
Chip 1 Exchange	NTB150N65S3HF		5,319			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	NTB150N65S3HF			19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	NTB150N65S3HF		380		1	1 $6.67 10 $6.67 100 $4.26 1000 $3.23 10000 $3.23	Buy Now
Infineon Technologies AG IKW50N65H5FKSA1 IGBT 650V 80A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW50N65H5FKSA1	Tube	423		1	1 $5.62 10 $5.62 100 $3.174 1000 $2.23867 10000 $2.144	Buy Now
Avnet Americas	IKW50N65H5FKSA1	Tube		19 Weeks	240	1 - 10 - 100 - 1000 $2.38413 10000 $2.38413	Buy Now
Newark	IKW50N65H5FKSA1	Bulk	391		1	1 $5.16 10 $4.77 100 $2.91 1000 $2.65 10000 $2.65	Buy Now
Rochester Electronics	IKW50N65H5FKSA1		212		1	1 $2.38 10 $2.38 100 $2.24 1000 $2.02 10000 $2.02	Buy Now
TME	IKW50N65H5FKSA1		30		1	1 $5.08 10 $3.12 100 $2.81 1000 $2.76 10000 $2.76	Buy Now

Chip One Stop	IKW50N65H5FKSA1	Tube	960			1 $2.13 10 $2.13 100 $2.11 1000 $2.11 10000 $2.11	Buy Now
EBV Elektronik	IKW50N65H5FKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFT50N60P3 MOSFET N-CH 600V 50A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT50N60P3	Tube	313		1	1 $10.87 10 $10.87 100 $6.89733 1000 $10.87 10000 $10.87	Buy Now
Infineon Technologies AG IKFW50N60ETXKSA1 IGBT TRENCH FS 600V 73A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKFW50N60ETXKSA1	Tube	240		1	1 $8.68 10 $6.003 100 $6.003 1000 $8.68 10000 $8.68	Buy Now
Avnet Americas	IKFW50N60ETXKSA1	Tube		19 Weeks	240	1 - 10 - 100 - 1000 $5.69719 10000 $5.69719	Buy Now
Rochester Electronics	IKFW50N60ETXKSA1		37		1	1 $5.69 10 $5.69 100 $5.35 1000 $4.84 10000 $4.84	Buy Now

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50N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
50n60b Abstract: 50n60 50N6 IXGH50N60B Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60B O-247 O-247AD 728B1 50n60b 50n60 50N6 IXGH50N60B	PDF
Untitled Abstract: No abstract text available Text: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	50N60B O-247	PDF
IXGK50N60A2D1 Abstract: No abstract text available Text: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2	PDF
IXGR50N60B2D1 Abstract: 50N60B2 Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 ISOPLUS247 2x61-06A 065B1 728B1 IXGR50N60B2D1	PDF
50N60B2 Abstract: 50n60 Text: HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	50N60B2 IC110 O-247 O-268 50N60B2 50n60	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	50N60B 120ns OT-227B E153432 728B1	PDF
Untitled Abstract: No abstract text available Text: Ultrasonic sensors UZAM 50N6121/S14 Ultrasonic proximity sensors dimension drawing 58,5 70 SW 36 95 14,2 ø 44,5 M30 x 1,5 LED 11 Teach-in M12 x 1 general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde	Original	50N6121/S14	PDF
Untitled Abstract: No abstract text available Text: Ultrasonic sensors UZAM 50N6121 Ultrasonic proximity sensors dimension drawing 95 70 SW 36 58,5 14,2 ø 44,5 M30 x 1,5 Teach- in LED general data photo special type 2 point proximity switch sensing range sd 350 . 2500 mm scanning range far limit Sde 350 . 2500 mm	Original	50N6121	PDF
50n60 Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623 Text: Advanced Technical Information IGBT with Reverse Blocking capability VCES = 600 / 800V IC25 = 60 A VCE sat = 2.5 V tf = 75 ns IXRH 50N80 IXRH 50N60 C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol Conditions	Original	50N80 50N60 O-247 50n60 G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623	PDF
50N60BD1 Abstract: 60-06A PLUS247 IXGK50N60BD1 Text: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	50N60BD1 PLUS247 0-06A 50N60BD1 60-06A PLUS247 IXGK50N60BD1	PDF
IGBT W 20 NK 50 Z Abstract: 50N60B IXSH50N60B Text: IGBT High Speed IXSH 50N60B V`bp I`OR V`bEë~íF Maximum Ratings TO-247 AD Short Circuit SOA Capability = 600 V = 75 A = 2.5 V mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50N60B O-247 IGBT W 20 NK 50 Z 50N60B IXSH50N60B	PDF
50N60C2 Abstract: 50n60 IXGH50N60C2 Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	50N60C2 IC110 O-247 O-268 50N60C2 50n60 IXGH50N60C2	PDF
50n60 Abstract: ixsk50n60au1 50N60AU1 Text: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60AU1 O-264 50n60 ixsk50n60au1 50N60AU1	PDF
BD3 diode Abstract: 50N60BD2 w a2a Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	50N60BD2 50N60BD3 Applic100 BD3 diode w a2a	PDF

50N60A Abstract: IXGH50N60A Text: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	50N60A 50N60A IXGH50N60A	PDF
Untitled Abstract: No abstract text available Text: HiPerFAST TM IGBT with Diode IXGK 50N60BD1 IXGX 50N60BD1 Preliminary data VCES IC25 VCE sat tfi = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	50N60BD1 O-264 PLUS247	PDF
50N6 Abstract: xs 004 a Text: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600	OCR Scan	50N60BD3 OT-227B, 50N6 xs 004 a	PDF
Untitled Abstract: No abstract text available Text: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C	OCR Scan	IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S)	PDF
Untitled Abstract: No abstract text available Text: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient	OCR Scan	50N60BU1 50N60BU1 to150 PLUS247TM O-264AA IXSX50N60BU1	PDF
50N60A Abstract: IXGH50N60AS IXGH50N60A Text: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600	OCR Scan	50N60A 50N60AS O-247 D94006DE, IXGH50N60AS IXGH50N60A	PDF
50N60 Abstract: G 50N60 IXGH50N50B Text: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n	OCR Scan	50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B	PDF
IXGH50N60A Abstract: 100-200Q IXGH50N60AS Text: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous	OCR Scan	50N60A 50N60AS O-247 50N60A) B2-91 IXGH50N60A 100-200Q IXGH50N60AS	PDF
Untitled Abstract: No abstract text available Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings	OCR Scan	50N60AU1	PDF
Untitled Abstract: No abstract text available Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20	OCR Scan	50N60AU1 O-264	PDF

50N6 Search Results

50N6 Price and Stock

Infineon Technologies AG AIGB50N65H5ATMA1

onsemi NTB150N65S3HF

Infineon Technologies AG IKW50N65H5FKSA1

Littelfuse Inc IXFT50N60P3

Infineon Technologies AG IKFW50N60ETXKSA1

50N6 Datasheets Context Search

50n60b

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IXGK50N60A2D1

IXGR50N60B2D1

50N60B2

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50n60

50N60BD1

IGBT W 20 NK 50 Z

50N60C2

50n60

BD3 diode

50N60A

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50N6

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50N60A

50N60

IXGH50N60A

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