Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document number: MC34708 Rev. 10.0, 2/2013 Power Management Integrated Circuit PMIC for i.MX50/53 Families 34708 The MC34708 is the Power Management Integrated Circuit (PMIC) designed specifically for use with the Freescale i.MX50 and i.MX53
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MC34708
MX50/53
MC34708
10-bit
STR0326182960
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725uA
Abstract: DIODE e2l
Text: EMC1423/EMC1424 1°C Temperature Sensor with Hardware Thermal Shutdown PRODUCT FEATURES Datasheet General Description Applications The EMC1423 and EMC1424 are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error
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EMC1423/EMC1424
EMC1423
EMC1424
MO-10-TSSOP-3x3
MO-187
725uA
DIODE e2l
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mdt10p621
Abstract: No abstract text available
Text: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high
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MDT10P621N
16-bit
oMDT10P621N
4Kx14
MDT10P621N)
192X8
mdt10p621
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Untitled
Abstract: No abstract text available
Text: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high
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MDT10P72N
16-bit
2Kx14
MDT10P72N)
128X8
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MDT10P62
Abstract: MDT10P
Text: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62
16-bit
MDT10P
128X8
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20MHZ
Abstract: 100nnn
Text: MDT10P621N AB 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断
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MDT10P621N
PORTB74
MDT10P621N
20MHZ
200ns
4Kx14
MDT10P621N)
192X8
20MHZ
100nnn
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LCD09
Abstract: MDT11P0122LQ11 R107H r11ah LCD05 DL05 MDT11P0122 LCD02 R89H DL050
Text: MDT11P0122 1. 概述 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功 耗和高抗干扰性一体的芯片。内存包括 4K MDT11P0122 的应用范围从发动机控制器， 高速自动电机（电车）到低电源遥控发射、接
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MDT11P0122
PG6/SEG26
PG5/SEG25
LCD09
MDT11P0122LQ11
R107H
r11ah
LCD05
DL05
MDT11P0122
LCD02
R89H
DL050
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MDT10P72
Abstract: DC MOTOR SPEED CONTROLLER
Text: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high
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MDT10P72
16-bit
128X8
DC MOTOR SPEED CONTROLLER
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MDT10P721
Abstract: 20MHZ
Text: MDT10P721 BB 1. 概述 －A／D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断
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MDT10P721
PORTB74
MDT10P721
20MHZ
200ns
192X8
20MHZ
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Untitled
Abstract: No abstract text available
Text: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62N
16-bit
2Kx14
MDT10P62N)
128X8
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MDT10P621
Abstract: MDT10P
Text: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip
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MDT10P621
16-bit
192X8
MDT10P
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20MHZ
Abstract: MDT10P62 MDT10P
Text: MDT10P62 BB .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器
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MDT10P62
MDT10P62
20MHZ
200ns
PORTB74
MDT10P
128X8
20MHZ
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Untitled
Abstract: No abstract text available
Text: FLM5359-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 35% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.3 to 5.9GHz • Impedance Matched Zin/Zout = 50ohm
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FLM5359-18F
-46dBc
50ohm
FLM5359-18F
25deg
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MDT10P7401
Abstract: MDT10P7401L11 MDT10P7401P11 MDT10P7401Q11
Text: MDT10P7401 1. General Description A/D converter module: -8 analog inputs multiplexed into one A/D This EPROM-Based 8-bit micro-controller uses a fully static converter CMOS technology process to achieve higher speed and -10-bit resolution smaller size with the low power consumption and high
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MDT10P7401
-10-bit
16-bit
120uA
100uA
1000ns
MDT10P7401
MDT10P7401L11
MDT10P7401P11
MDT10P7401Q11
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XC-0900-03S
Abstract: GSM-710 R-GSM-900 s41 230 CWPG ALM-1522 GSM-850 P-GSM-900 FR4 substrate 10GHz T-GSM-810
Text: ALM-1522 Low Noise High Gain, High Linearity Balanced LNA Module for 800MHz to 1.0GHz Application Note 5419 Introduction Avago Technologies’ ALM-1522 is a very low noise, high gain and high linearity dual amplifier module, operating from 800MHz to 1.0GHz. In the balanced configuration, the measured performances on the demonstration
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ALM-1522
800MHz
ALM-1522
900MHz
43dBm
28dBm
ALM-1222
ALM-1322
XC-0900-03S
GSM-710
R-GSM-900
s41 230
CWPG
GSM-850
P-GSM-900
FR4 substrate 10GHz
T-GSM-810
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2N3904
Abstract: MSOP-10
Text: EMC1423/EMC1424 1°C Temperature Sensor with Hardware Thermal Shutdown PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC1423 and EMC1424 are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error
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EMC1423/EMC1424
EMC1423
EMC1424
MO-10-TSSOP-3x3
MO-187
2N3904
MSOP-10
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MT3S20P
Abstract: No abstract text available
Text: MT3S20P 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S20P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.45dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11dB(標準) (@ f=1GHz)
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MT3S20P
SC-62
MT3S20P
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MT3S20R
Abstract: No abstract text available
Text: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz)
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MT3S20R
MT3S20R
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MT3S22P
Abstract: T1600
Text: MT3S22P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S22P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.5dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)
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MT3S22P
SC-62
MT3S22P
T1600
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MT3S20P
Abstract: No abstract text available
Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini
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MT3S20P
SC-62
MT3S20P
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Untitled
Abstract: No abstract text available
Text: MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR T3 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e| =13.5 dB typ. (@ f=1 GHz)
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MT3S15TU
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gm 88
Abstract: f1640 ED-4701 FLM5964-35F
Text: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5964-35F
FLM5964-35F
gm 88
f1640
ED-4701
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Untitled
Abstract: No abstract text available
Text: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e| =13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)
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MT3S19TU
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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