4810 mosfet
Abstract: No abstract text available
Text: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiJ458DP
18-Jul-08
4810 mosfet
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiHG47N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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4810 mosfet
Abstract: No abstract text available
Text: New Product SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 40.6 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ458DP
2002/95/EC
SiJ458DP-T1-GE3
18-Jul-08
4810 mosfet
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MK1210
Abstract: 4810 mosfet MA4000 Series MJ2400 MA1000 MA1000 Series MA2410 MA1010 MA3000 MA3000 Series
Text: POWER ICs Stepping Motor Drivers ICs Outline The MTD series are monolithic power ICs that can be directly controlled through a CPU or a Gate Array with few external parts. Applications 1. Stepping motor drive for office equipment products. 2. Stepping motor drive for industrial robots, and automatic equipment.
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ZIP-27
HSOP-28
MTD1110
1120F
5MTD1361
MTD2001
2003F
2005F
2006F
2007F
MK1210
4810 mosfet
MA4000 Series
MJ2400
MA1000
MA1000 Series
MA2410
MA1010
MA3000
MA3000 Series
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Untitled
Abstract: No abstract text available
Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHW47N60E
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHW47N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHW47N60E
O-247AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 29 Qgd (nC) 57 Configuration Single Low figure-of-merit (FOM) Ron x Qg
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SiHW47N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses
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SiHG47N60E
2002/95/EC
O-247AC
11-Mar-11
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4810 mosfet
Abstract: SIHG47N60E
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses
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SiHG47N60E
2002/95/EC
O-247AC
11-Mar-11
4810 mosfet
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Generation Two
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SiHG47N60E
2002/95/EC
O-247AC
11-Mar-11
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4810 mosfet
Abstract: sihg47n60e
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHG47N60E
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
4810 mosfet
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses
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SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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C180-24
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHG47N60E
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
C180-24
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses
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SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses
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SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHG47N60E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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ba 4913
Abstract: PKB 4713 PINB PKB 4619 PINB PKB 4711 PINB ac power converter mtbf MOSFET 4418 PKB 4418 PINBLA IEC61204 R10A
Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/90 W Contents Product Program. . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Information. . . . . . . . . . . . . . . . . 3 Absolute Maximum Ratings . . . . . . . . . . . . . 4 Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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Abstract: No abstract text available
Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/90 W Contents Product Program. . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Information. . . . . . . . . . . . . . . . . 3 Absolute Maximum Ratings . . . . . . . . . . . . . 4 Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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Untitled
Abstract: No abstract text available
Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/82.5 W Contents Product Program . . . . . . . . . . . . . . . . . . . . . . 2 Connections . . . . . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . 2
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Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXH100N60C3
IC110
20-60kHz
O-247
100N60C3
0-10-A
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100n60
Abstract: 100N60C3 IXXH100N60C3
Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXXH100N60C3
IC110
20-60kHz
O-247
100N60C3
0-10-A
100n60
IXXH100N60C3
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transistor BC 575
Abstract: 4814 mosfet mosfet 4813 CD 4814 4814 4814 transistor 221A-06 AN569 MTP12P10 diode P06A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP12P10 Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,
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MTP12P10
21A-06,
O-220AB
transistor BC 575
4814 mosfet
mosfet 4813
CD 4814
4814
4814 transistor
221A-06
AN569
diode P06A
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motorola 4-808
Abstract: AN569 MTP12N10E FET MOSFET transistor "" DIODE MOTOROLA Case 403 ScansUX2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S E-FE T ™ P o w er Field E ffe c t Tran sisto r M TP 12N 10E M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS on = °-16 0HM
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OCR Scan
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PDF
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MTP12N10E
motorola 4-808
AN569
FET MOSFET transistor ""
DIODE MOTOROLA Case 403
ScansUX2
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