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    Amphenol Communications Solutions RJHSE548F010T

    8P8C, Ra, Shield, With Leds/Tap/Rl |Amphenol Communications Solutions RJHSE548F010T
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    Newark RJHSE548F010T Reel 900
    • 1 $1.53
    • 10 $1.53
    • 100 $1.53
    • 1000 $1.52
    • 10000 $1.35
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    Amphenol Commercial RJHSE548F010T

    8P8C, RA, Shield, With LEDs | Amphenol Commercial (Amphenol CS) RJHSE548F010T
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    RS RJHSE548F010T Bulk 8 Weeks 900
    • 1 -
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    • 1000 $1.64
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    LSI Corporation DQ48F010-30

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics DQ48F010-30 48 1
    • 1 $8.775
    • 10 $6.5813
    • 100 $5.4844
    • 1000 $5.4844
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    Shenzhen Wisva Optoelectronics Co.,Ltd HH-SRGB48F010-5050-12 WHITE PCB IP20

    LED tape; RGB; 5050; LED/m: 48; 10mm; white PCB; IP20; 9W/m; 12VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME HH-SRGB48F010-5050-12 WHITE PCB IP20 110 1
    • 1 $3.96
    • 10 $3.48
    • 100 $3.24
    • 1000 $3.24
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    Shenzhen Wisva Optoelectronics Co.,Ltd HH-SRGB48F010-5050-12 WHITE PCB IP65A

    LED tape; RGB; 5050; LED/m: 48; 10mm; white PCB; IP65; 9W/m; 12VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME HH-SRGB48F010-5050-12 WHITE PCB IP65A 78 1
    • 1 $4.79
    • 10 $4.19
    • 100 $3.79
    • 1000 $3.79
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    48F010 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    48F010-200 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    48F010-20A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-20F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-20N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-250 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    48F010-25A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-25F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-25N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-300 Seeq Technology 128K x 8 CMOS EEPROM Memory Scan PDF
    48F010-30A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-30F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010-30N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-20A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-20F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-20N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-25A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-25F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-25N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-30A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    48F010K-30F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF

    48F010 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: seeQ 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Description Features • ■ 128K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ ■ ■ Input Latches tor Writing and Erasing


    OCR Scan     		48F010 1024K 48F010 128Kx8bits. s48F010 MD400063/A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components-Signetics 48F010 Document No. ECN No. Date of Issue A u g u s t 1990 Status P re lim ina ry Specification 1024K-bit FLASH memory 128K x 8 M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 4 8 F 0 1 0 is a 10 24K bit C M OS


    OCR Scan     		48F010 1024K-bit 128K-byte 48F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: eeeo 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • ■ ■ ■ ■ ■ ■ ■ The 48F010 is a 1024K bit CMOS FLASH EEPROM organizedas 128Kx8bits. SEEQ‘48F010 brings together the high density and cost effectiveness of UVEPROMs,


    OCR Scan     		48F010 1024K 48F010 128Kx8bits. s48F010 MD400063/A MD400063/A PDF

    AH11-00093A

    Abstract: 48F010-20F 48F010-25F 48F010-30F 48F010K-25F
    Text: Philips Components-Signetics 48F010 Document No. ECN No. Date of Issue A u g ust 1990 Status P re lim ina ry S pecification 1024K-bit FLASH memory 128K x 8 M em ory P roducts DESCRIPTION FEATURES The 4 8 F 0 1 0 is a 10 24 K bit C M O S FLASH M em ory o rg a n ize d as 128K x 8


    OCR Scan     		48F010 1024K-bit 48F010 1024K AH11-00093A 48F010-20F 48F010-25F 48F010-30F 48F010K-25F PDF

    Untitled

    Abstract: No abstract text available
    Text: SEE<3 TECHNOLOGY INC HE D ainsaa q o q s 7ö 7 ? E/48F010 PRELIMINARY DATA SHEET T -4 6 -1 3 -2 7 Ordering Information D M 48F010 ~ r Pickag» Typ* ~ T Temperatur« Rang« 1 D*vlc* D » Ceramic Dip E - - 4 0 to +85°C 128KX8FLASH EEPROM L « Ceramic Leadess Chip


    OCR Scan     		E/M48F010 48F010 128KX8FLASH MD400069/A ains33 E/M47F01 E/M47F010 E/M47F010 MD400084/- Q002775 PDF

    D28F512

    Abstract: flash eeprom D28F010
    Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent


    OCR Scan     		D28F512 D28F010 MC48F512 MC48F010 64KX8 48F512 48F010 48F010 1024K flash eeprom PDF

    Untitled

    Abstract: No abstract text available
    Text: 48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 128K Byte FLASH Erasable Non-Volatile Memory m FLASH EEPROM Cell Technology • ■ ■ ■ ■ ■ ■ Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing


    OCR Scan     		EM48F010 1024K M4BF010) M48F010) E48F010) W8F010 MD400069/A E/M48F010 48F010 PDF

    A1HB

    Abstract: 2764-16
    Text: SEEcJ TECHNOLOGY INC 11E D a n ^ a 0DDS7?b 2 E/48F010 1024K CMOS FLASH EEPROM 'T - M PRELIMINARY DATA SHEET Block Diagram Features • t - il- z i October 1989 12SK Byte FLASH Erasable Non-Volatile Memory U FLASH EEPROM Cell Technology » Electrical Chip and 1024 Byte Sector Erase


    OCR Scan     		E/M48F010 1024K M48F010) E48F010) 10OpF MD400010/A A1HB 2764-16 PDF

    75a5

    Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
    Text: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200


    OCR Scan     		47F010-200 47F010-250 47F010-300 48F010-200 48F010-250 28F010( 75a5 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25 PDF

    3XXXM

    Abstract: No abstract text available
    Text: 000Q E/48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ 128K Byte FLASH Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing


    OCR Scan     		E/M48F010 1024K M48F010) E4SF010) NO182 E/M48F010 MD400069/A 3XXXM PDF