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    4936N Search Results

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    4936N Price and Stock

    Rochester Electronics LLC NTMFS4936NT1G

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey NTMFS4936NT1G Bulk 433,121 916
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    • 1000 $0.33
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    Rochester Electronics LLC NTMFS4936NCT1G

    11.6A, 30V, 0.0048OHM, N-CHANNE
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    DigiKey NTMFS4936NCT1G Bulk 10,500 919
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    STMicroelectronics L4936N

    IC REG LIN POS ADJ 11MULTIWATT
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    DigiKey L4936N Tube
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    ComSIT USA L4936N 850
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    Pulse Electronics Corporation PE-64936NL

    XFRMR T1/CEPT/ISDN-PRI 1CT:1
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    DigiKey PE-64936NL Tube 1,440
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    Avnet Americas PE-64936NL Tube 6 Weeks, 1 Days 1,440
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    Mouser Electronics PE-64936NL 184
    • 1 $5.28
    • 10 $3.83
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    • 1000 $3.17
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    Newark PE-64936NL Bulk 1,440
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    Bristol Electronics PE-64936NL 494
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    PE-64936NL 10
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    Avnet Abacus PE-64936NL 23 Weeks 1,440
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    IBS Electronics PE-64936NL 999 278
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    Master Electronics PE-64936NL
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    Sager PE-64936NL 1,440
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    onsemi NTMFS4936NT1G

    MOSFET N-CH 30V 11.6A/79A 5DFN
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    DigiKey NTMFS4936NT1G Reel
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    Avnet Americas NTMFS4936NT1G Reel 4 Weeks 1,103
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    Bristol Electronics NTMFS4936NT1G 875 7
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    • 100 $0.4875
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    NTMFS4936NT1G 95
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    Rochester Electronics NTMFS4936NT1G 433,121 1
    • 1 $0.3308
    • 10 $0.3308
    • 100 $0.311
    • 1000 $0.2812
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    Find more 4936N price and stock on Findchips.com

    4936N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 4936n

    Abstract: No abstract text available
    Text: 4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance


    Original     		PDF NTMFS4936N NTMFS4936N/D mosfet 4936n

    mosfet 4936n

    Abstract: 4936N
    Text: 4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance


    Original     		PDF NTMFS4936N NTMFS4936N/D mosfet 4936n 4936N

    mosfet 4936n

    Abstract: mosfet+4936n
    Text: 4936N, 4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft


    Original     		PDF NTMFS4936N, NTMFS4936NC NTMFS4936N/D mosfet 4936n mosfet+4936n

    4936N

    Abstract: mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G
    Text: 4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF NTMFS4936N NTMFS4936N/D 4936N mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G

    4936N

    Abstract: mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N
    Text: 4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF NTMFS4936N NTMFS4936N/D 4936N mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N

    Untitled

    Abstract: No abstract text available
    Text: 4936N, 4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft


    Original     		PDF NTMFS4936N, NTMFS4936NC NTMFS4936N/D