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    4998 TRANSISTOR Search Results

    4998 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4998 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet based power inverter project

    Abstract: hybrid vehicle power inverter electric cooling water pump engine car FS600R07A2E3 FS800R07A2E3 SAK-TC1797-512F180E AC QFP-176 1ED020I12FTA FS300R07A1E3 FS800R
    Text: Hybrid Electric and Electric Cars Electromobility driven by semiconductor innovations www.infineon.com/ev 10679_Broschüre Elektroauto_rud_rz.indd 2 18.10.10 16:31 Stepping up to the Energy Challenge The need to conserve natural resources, reduce emissions and raise energy efficiency has become a major public concern. Amidst worries about dependence on


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    FS800R07A2E3

    Abstract: FS50R07W1E3_B11A FS400R07A1E3 tc1782 SAK-TC1797-512F180E AC dc-dc converter 50kW 100kW 10kw dc-dc mosfet based power inverter project 2ED020I12FA FS50R07W1E3
    Text: Hybrid Electric and Electric Cars Electromobility driven by semiconductor innovations [ www.infineon.com/ev] Stepping up to the Energy Challenge The need to conserve natural resources, reduce emissions and raise energy efficiency has become a major public concern. Amidst worries about dependence on


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    CG1 HOYA

    Abstract: diode a4W ccd color Linear Image Sensor FTF5066C 74131 74151 pin configuration CCD IMAGE .47k capacitor image 74151 PIN DIAGRAM ccd image sensor
    Text: IMAGE SENSORS DATA SHEET FTF5066C 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066C • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)


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    PDF FTF5066C 4992H CG1 HOYA diode a4W ccd color Linear Image Sensor FTF5066C 74131 74151 pin configuration CCD IMAGE .47k capacitor image 74151 PIN DIAGRAM ccd image sensor

    A1W TRANSISTOR

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5066C 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066C • Image format 36 x 48 mm •


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    PDF FTF5066C FTF5066C 4992H A1W TRANSISTOR

    DALSA AREA CCD

    Abstract: Diode A3X
    Text: IMAGE SENSORS DATA SHEET FTF5066C 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009, November 3 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066C • Image format 36 x 48 mm •


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    PDF FTF5066C FTF5066C 4992H DALSA AREA CCD Diode A3X

    FTF5066M

    Abstract: B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W
    Text: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)


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    PDF FTF5066M 4992H FTF5066M B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm •


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    PDF FTF5066M FTF5066M 4992H

    DALSA AREA CCD

    Abstract: FTF5066C
    Text: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009, November 3 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm •


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    PDF FTF5066M FTF5066M 4992H DALSA AREA CCD FTF5066C

    2N5001

    Abstract: TCA 875 MW-82 2N5149 2N4999
    Text: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias


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    PDF 2N4999. 2N5001, 2N5147, 2N5149 2N5001 TCA 875 MW-82 2N4999

    2N5000

    Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
    Text: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias


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    PDF 2N4998, 2N5000, 2N5148, 2N5150 2N4999, 2N5001, 2N5147, 2N5149 2N5000 circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148

    TLP 527

    Abstract: tlp527 2N 60 Application notes TIP527 TIP528 2N4998 2N5685 TIP640
    Text: TYPES TIP527, TIP528 P-N-P SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -SPEED -SW ITC H IN G A P PLIC A TIO N S r mechanical data • 20 0 V Min V B R C E O • 8-A Rated Continuous Collector Current • 60 Watts at 100°C Case Temperature


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    PDF TIP527, TIP528 TLP 527 tlp527 2N 60 Application notes TIP527 2N4998 2N5685 TIP640

    2N6884

    Abstract: 2N5683 2N5684 c358c 2N5685 2N4998 TIP640
    Text: TYPES 2NS683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIER A N D H IG H-SPEED-SW ITCHING A P PLIC A TIO N S DESIG N E D FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2IM5686 V • 300 Watts at 25°C Case Temperature | •


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    PDF 2NS683, 2N5684 2N5685, 2IM5686 2N5683 2N5684 2N6884 c358c 2N5685 2N4998 TIP640

    TLP647

    Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating


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    PDF TIP645, TIP646. TIP647 TIP640, TIP641, TIP642 TLP647 TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP645 TIP646

    transistor b1184

    Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
    Text: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K


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    PDF 2SA1037AKLN V2SC41 2412K 3722K 4642K A1037AK 2411K B1197K 2SA1727 transistor b1184 B1474 C5072 C4938 b1184 transistor c4998 2SB1051 K2306 2sc4937

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


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    PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    B0638

    Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
    Text: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g


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    PDF BD634, BD636, BD638 BD633, BD635, BD637 BD634 BD636 B0638 BD638 TIP 122 100 V B0738 BD637 tip 42 darlington complementary power amplifier tip 142 73 5302

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


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    PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    2SC 1885

    Abstract: 2sc low noise
    Text: T ransistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications.


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    PDF O-220, SC-59/Japanese OT-23) 01CL2 2SC 1885 2sc low noise

    Untitled

    Abstract: No abstract text available
    Text: 2SC4997 / 2SC4998 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Transistors I High-frequency Amplifier Transistor, RF switching 2SC4997 / 2SC4998 •Feature« •A b s o lu te maximum ratings T a = 2 5 t 1 ) High ft. (fr—240MHz) P a ra m e te r •P a c ka g in g specifications and hre


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    PDF 2SC4997 2SC4998 2SC4618 2SC4098 2SC2413K 2SC2058S 240MHz) 0Dlb713

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


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    PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    Tip 26C transistor

    Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
    Text: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating


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    PDF TIP140, TIP141, TIP142 TIP145, TIP146, TIP147 100-mJ TIP140 TIP141 T1P142 Tip 26C transistor tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055

    3055 5C pnp transistor

    Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
    Text: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •


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    PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 25-mJ TIP110 TIP111 3055 5C pnp transistor tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055

    TIP 41 transistor

    Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
    Text: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C


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    PDF TIP36, TIP36A, TIP36B, TIP36C TIP35, TIP35A, TIP35B, TIP35C TIP36 TIP36A TIP 41 transistor tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147

    TIP 642 transistor

    Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
    Text: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc


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    PDF 2N5333 2N4300 150ns TIP 642 transistor transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor