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    HYM76V4M655HGLT6-8

    Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
    Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF PC100 4Mx16 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYM76V4M655HGLT6-8 HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 4Mx64 PC100 4Mx16 HYM76V4655HGT6 4Mx64bits 4x16bits 400mil 54pin 168pin

    BSS960A

    Abstract: VDEBC2304
    Text: V-Data VDEBC2304 PC-133 SDRAM Unbuffered SO-DIMM 4Mx64bits SDRAM DIMM based on 4Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDEBC2304 is 4Mx64 bits Synchronous DRAM Modules, The modules are composed of four 4Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil


    Original     		PDF VDEBC2304 PC-133 4Mx64bits 4Mx16, VDEBC2304 4Mx64 4Mx16 400mil 54pin 144pin BSS960A

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 4Mx64 PC133 4Mx16 HYM76V4M635HG HYM76V4M635HGT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM366F400CK KMM366F410CK DRAM MODULE KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM366F400CK KMM366F410CK KMM366F410CK KMM366F40 4Mx64bits 300mil 168-pin

    HYM7V65401BTRG

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B R-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B R-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.


    Original     		PDF 4Mx64 PC100 4Mx16 HYM7V65401B 4Mx64bits 4Mx16bit 400mil 54pin 168pin HYM7V65401BTRG

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic


    Original     		PDF M466F0404BT2-L 4Mx64 4Mx16 M466F0404BT2-L 4Mx16, 4Mx64bits cycles/128ms, capacitor taa

    HMD4M64D16EV

    Abstract: HMD4M64D16V
    Text: HANBiT HMD4M64D16V 32Mbyte 4Mx64 Fast Page Mode 4K Ref. 3.3V, DIMM 168 pin Part No. HMD4M64D16V GENERAL DESCRIPTION The HMD4M64D16V is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16V consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOP 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF HMD4M64D16V 32Mbyte 4Mx64) HMD4M64D16V 4Mx64bits 400mil 168-pin HMD4M64D16EV

    HYM7V65401B

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package


    Original     		PDF 4Mx64 PC100 4Mx16 HYM7V65401B 4Mx64bits 4Mx16bit 400mil 54pin 144pin

    HYM7V63401BTRG-75

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V63401B R-Series DESCRIPTION The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package


    Original     		PDF 4Mx64 PC133 4Mx16 HYM7V63401B 4Mx64bits 4Mx16bit 400mil 54pin 168pin HYM7V63401BTRG-75

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 4Mx64 PC133 4Mx16 HYM76V4635HGT6 HYM76V4635AT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    KMM366F404BS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin KMM366F404BS1

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package


    Original     		PDF 4Mx64 PC100 4Mx16 HYM7V65401B 4Mx64bits 4Mx16bit 400mil 54pin 144pin

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series DESCRIPTION The Hynix HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 4Mx64 PC133 4Mx16 HYM76V4M635HG HYM76V4M635HGT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V63401B R-Series DESCRIPTION The Hyundai’ s HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP


    Original     		PDF 4Mx64 PC133 4Mx16 HYM7V63401B 4Mx64bits 4Mx16bit 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF M466F0404DT2-L M466F0404DT2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F404BS2-L KMM466F404BS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: HYM76V4655HGT6 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    OCR Scan     		PDF HYM76V4655HGT6 4Mx64, 4Mx16 PC100 HYM76V4655HGT6 4Mx64bits 4x16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin


    OCR Scan     		PDF HYM76V4M655HG 4Mx64, PC100 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYW6V4M655HG

    HYM7V65401

    Abstract: No abstract text available
    Text: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package


    OCR Scan     		PDF HYM7V65401B 4Mx64, 4Mx16 PC100 4Mx64bits 4Mx16bit 400mll 54pln 144pin HYM7V65401

    MXAQ

    Abstract: No abstract text available
    Text: HYM76V4M635HG L T6 4Mx64, 4Mx16 based, PC133 DESCRIPTION The Hyntx HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed o f four4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    OCR Scan     		PDF HYM76V4M635HG 4Mx64, 4Mx16 PC133 HYM76V4M635HGT6 4Mx64bits four4Mx16bits 400mil 54pin 168pin MXAQ

    Untitled

    Abstract: No abstract text available
    Text: KM M 3 66 F 4 0 0C K KM M 366F41 OCK DR A M M O D U L E KM M 3 6 6 F 4 0 0 C K & K M M 3 6 6 F 4 1 0 C K E D O M o d e wi t h ou t buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V F E A TU R ES G E N E R A L DESCRIPTION The Samsung KMM366F40 1 0CK is a 4Mx64bits Dynamic


    OCR Scan     		PDF 366F41 KMM366F40 4Mx64bits 300mil 168-pin -KMM36AS KMM366F410CK KMM366F400CK

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E40 8 4BS KMM364E40(8)4BS EDO Mode 4M x 64 DRAM DIMM Using 4M x16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E40(8)4B consists of four CMOS 4Mx16bits DRAMs


    OCR Scan     		PDF KMM364E40 4Mx64bits 4Mx16bits 400mil 168-pin KMM364E404BS