IRFP460
Abstract: IRFP460 IR irfp460 mosfet
Text: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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4ASS452
GD155M4
IRFP460
O-247
O-220
O-218
IRFP460
IRFP460 IR
irfp460 mosfet
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ma 8920
Abstract: 750PEF10 750PEF40 NI-11
Text: INTERNATIONAL RECTIFIER / qcc / ct 4855452 INTERNATIONAL RECTIFIER in D e | 4ASS452 000473M b Data Sheet No. PD-3.065 49C 04734 D INTERNATIONAL RECTIFIER I R 1180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description Th e 7 5 0 P E F series o f fast tu r n -o ff thyristors use centre
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4i3SS455
750PEF
233KansasSl
CA90245
II60067.
ma 8920
750PEF10
750PEF40
NI-11
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9956b
Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
Text: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI140U06
100nH
C-836
4ASS452
0050b2b
9956b
c836
irgti140u06
diode c832
c833
*9956b
956B
mosfet c836
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irf710
Abstract: No abstract text available
Text: International S Rectifier HEXFET Power MOSFET MS5S45E 0 0 1 4 7 5 2 3T0 INR PD-9.327J IRF710 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D ?5E VDSS= 400V ^DS on = 3 -6 Q
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MS5S45E
IRF710
O-220
4ASS452
00147S7
irf710
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C-491
Abstract: No abstract text available
Text: International H R ectifier PD959 IRGKIN025M12 "CHOPPER LOW SIDE SWITCH IGBTINT-A-PAK |_ow conduction loss IGBT VŒ = 1200V lc = 25A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail11 losses •Short circuit rated Vce ON <2.7V
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IRGKIN025M12
C-493
100nH
C-494
4ASS452
C-491
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Untitled
Abstract: No abstract text available
Text: PD-2.474 bïtemational [torjRectifier HFA75MC40C Ultrafast, Soft Recovéry Diode HEXFRED Features V r = 400V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC ANODE COMMON ANODE
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HFA75MC40C
500nC
90A/pS
Liguria49
3150utram
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transistor c905
Abstract: No abstract text available
Text: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2
C-911
S5452
TQ-220AB
C-912
transistor c905
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IR6001
Abstract: No abstract text available
Text: Preliminary Data Sheet 6.038 INTERNATIONAL RECTIFIER IO R IR6001 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH 60V Intelligent Power Switch Rating Summary General Description The IR6001 is a monolithic, fully self protected high side D M O S power switch. Designed primarily for solenoid
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IR6001
IR6001
D-6380
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Untitled
Abstract: No abstract text available
Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4BC20FD
O-22QAB
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Untitled
Abstract: No abstract text available
Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve
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IRGB430U
O-220AB
0G20375
TQ-220AB
4ASS452
02037b
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FR07* diode
Abstract: FR07
Text: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi
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IRFN450
415ft
415C2
4ASS452
24TGb
FR07* diode
FR07
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Untitled
Abstract: No abstract text available
Text: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e
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o322-3331,
D-6380
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Untitled
Abstract: No abstract text available
Text: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3
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HFA70NK60C
520nC
80A/ps
Liguria49
4ASS452
002na0
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c918
Abstract: C918 diode C913
Text: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses
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IRGBC20KD2-S
i002070
SMD-220
C-920
c918
C918 diode
C913
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Untitled
Abstract: No abstract text available
Text: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V
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IRF5305
6C413
554S2
D024242
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Untitled
Abstract: No abstract text available
Text: TOR INTERNATIONAL 4Ö554S2 OGlOTCm 2 RECTIFIER -T-û I-33 154 R52K SERIES 5000-4400 VOLTS RANGE 1320 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER OIODES VOLTAGE i RATINGS t i : PART : NUMBER t j : : * I S j VRRM. Vfl - VJ Hm « ra p . paak r a v i r u and d ir a o t v o lta g a
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554S2
R5SK48A
R53C44B
R52K50A
5S452
7110-33SI
D0-200AC
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Untitled
Abstract: No abstract text available
Text: International Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 500V
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IRGB440U
O-220AB
D02D3Ã
TQ-220
46S54S2
0Q203A5
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ST203C
Abstract: No abstract text available
Text: Bulletin 125176/A International S Rectifier ST203C.C s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M e ta l c a s e w ith c e ra m ic in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A B A -P U K ■ A ll d iffu s e d d e s ig n
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125176/A
ST203C.
204AS5452
002730b
D-538
DD273DÃ
ST203C
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Untitled
Abstract: No abstract text available
Text: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated
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IRF840LC
D-6380
0021b21
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IRFI840GLC
Abstract: No abstract text available
Text: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
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IRFI840GLC
D-6380
0021b77
IRFI840GLC
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t 3.15A 250V CQ
Abstract: 81RDT120M 81RDT-M rgte 81RDT100M international rectifier GTO 84RDT-M INTERNATIONAL RECTIFIER 81RDT 84RDT120M 2103S
Text: INTERNATIONAL RECTIFIER ^ 73 Ï F| 4055455 OGDbSt.3 4 ^ T r / 7 - Data S h e e t N o. PD -3.077B INTERNATIONAL RECTIFIER IOR 8 1 R D T -M A N D 8 4 R D T -M S E R IE S 3 5 0 A It g Q C3ate Turn-Off P ressu re Assem bled S C R s Major Ratings and Characteristics
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81RDT-M
84RDT-M
S5452
25/IS
30/XS
WHITE-31
84RDT-M)
t 3.15A 250V CQ
81RDT120M
rgte
81RDT100M
international rectifier GTO
INTERNATIONAL RECTIFIER 81RDT
84RDT120M
2103S
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WE VQE 11 E
Abstract: DIODE 65A IRGT1065F06 FF1000
Text: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A
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IRGTI065F06
10KHz
50KHz
C-218
4ASS452
WE VQE 11 E
DIODE 65A
IRGT1065F06
FF1000
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD - 2.271 A 85CNQ015 SCHOTTKY RECTIFIER 80Amp Major Ratings and Characteristics Characteristics Desciption/Features The 85CNQ015 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology
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85CNQ015
80Amp
85CNQ015
3150utram
554S2
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TRANSISTOR C483
Abstract: IRGPH50MD2
Text: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses
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IRGPH50MD2
10kHz)
O-247AC
5SM52
C-488
TRANSISTOR C483
IRGPH50MD2
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