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    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM

    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl

    HY514460

    Abstract: No abstract text available
    Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514460 Kx164 16-bit 400mil 40pin 40/44pin 1AC12-00-APR93 DDQ1553

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY514410A 8-10-A 4b750fl 000147b HY514410AJ HY514410AU HY514410AT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400B 36-bit HY5116400 HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in


    OCR Scan     		PDF HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl

    Untitled

    Abstract: No abstract text available
    Text: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A speed-70/85/100/120ns 1DB01-11-MAY94 HY6264AP HY6264ALP

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY628400-I Series _ 512Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512Kx 1DE02-11-MAY94 4b750flfl D003fll2 HY628400LP-I

    Untitled

    Abstract: No abstract text available
    Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256B-I 05-11-MAY95 Mb75Dflfi HY62256BLP-I HY62256BLLP-I HY62256BU-I

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees


    OCR Scan     		PDF HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16410A HY51V1641 D32-00-MAY94 4b75Dflfl HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC

    HY62256A

    Abstract: hyundai HY62256AJ55
    Text: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A 55/70/85/100ns HY6264A-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ hyundai HY62256AJ55

    Untitled

    Abstract: No abstract text available
    Text: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are


    OCR Scan     		PDF HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 HY57V648010 HY57V648020

    I0042

    Abstract: HA11
    Text: »HYUNDAI H Y 6 2 8 1 0 0 A -I S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A-I 128Kx HY628100A-I T0008 1DD03-11-MAY95 4b75QSfi HY628100ALP-I I0042 HA11

    TRA05

    Abstract: HY51V16404A asus a6 circuit Asus A6 CAS315
    Text: HY51V16404A Series “HYUNDAI 4M X 4-bit CM OS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16404A utilizes Hyundai's CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16404A HY51V16404Ato 27JBSC 1AD39-10-MAY95 HY51V16404ASLJ HY51V16404AT TRA05 asus a6 circuit Asus A6 CAS315

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted


    OCR Scan     		PDF HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG 012SQ171MN 1CF15-10-FEBM

    Untitled

    Abstract: No abstract text available
    Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n ­


    OCR Scan     		PDF HY234000 120ns 525mil HY234000P-XXX HY234000G-XXX