thyristor st 103
Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Text: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8
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4bfib22b
MCC95
MCD95
CD95-04io8
CD95-06io8
CD95-08io8
CD95-12io8
CD95-14io8
CDd5-16io8
-06io1
thyristor st 103
mcc95 16 101
CD-951
MCC90
MCC95-12IO1
v06v
MCR-SL-S-1/thyristor st 103
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KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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2675000101
Abstract: 6B40 bridge diode IXBD4410PC schematic diagram inverter 12v to 5v 30a ic driver mosfet 8 pin 4413 ic 4410 8pin schematic diagram 24v UPS 1XBD4410 schematic diagram inverter 24V to 12v 30a schematic diagram welding inverter full bridge
Text: 4bE D • I MbôbEEb 000105Ö 1 H IX Y X Y S CORP □IX Y S PRELIMINARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or Greater Low- to High-Side Isolation.
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1503A
ixbd4410
ixbd4411
ixbd4412
ixbd4413
IXBD4410/4411
1000pFLoad;
100ns
P061180
D-6840
2675000101
6B40 bridge diode
IXBD4410PC
schematic diagram inverter 12v to 5v 30a
ic driver mosfet 8 pin 4413
ic 4410 8pin
schematic diagram 24v UPS
1XBD4410
schematic diagram inverter 24V to 12v 30a
schematic diagram welding inverter full bridge
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Untitled
Abstract: No abstract text available
Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM
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IRFP450
O-247
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23Z129
Abstract: ci 4411 welding p91 schematic diagram welding inverter ic 4410 8pin IXBD 4413 IXBD4410 IXBD4411PI ixdp630 schematic diagram welding inverter control
Text: ISOSMART Half Bridge Driver Chipsets • Type Description Package IXBD4410PI IXBD4411 PI Full-Feature Low-Side Driver Full-Feature High-Side Driver 16-Pin P-DIP 16-Pin P-DIP -40 to +85°C -40 to +85°C • IXBD441 OSI IXBD4411SI Full-Feature Low-Side Driver
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IXBD4410PI
IXBD4411
16-Pin
IXBD441
IXBD4411SI
IXBD4412PI
IXBD4413PI
23Z129
ci 4411
welding p91
schematic diagram welding inverter
ic 4410 8pin
IXBD 4413
IXBD4410
IXBD4411PI
ixdp630
schematic diagram welding inverter control
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information Super Fast Recovery Diode DSDI60 IFAVM 63 A vr 1400-1800 V RRM trr v RSM v RRM V Type 1400 1600 1800 Symbol C TO-247 AD DSDI 60-14A DSDI 60-16A DSDI 60-18A Test Conditions Maximum Ratings A A A t = 10 ms 50 Hz , sine
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DSDI60
O-247
0-14A
0-16A
0-18A
4bfib22b
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150-12SE
Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Text: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT
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93IXYS
iibflb22b
150-12SE
VIE150-12SE
POB1180;
D68619
VIE150-12S
FIB5
IXYS IGBT 3kv
igbt inverter circuit for induction heating
Induction Heating Resonant Inverter
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Untitled
Abstract: No abstract text available
Text: YS Thyristor Modules Thyristor/Diode Modules MCC 312 MCD 312 ^TRMS ^TAVM V RRM VRSM VRRM v DSM ^D R M V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC 312-12io1 MCC 312-14io1 MCC 312-16io1 MCC 312-18io1 Test Conditions ^TAVM’ ^FAVM Tc = 85°C; 180°!sine
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312-12io1
312-14io1
312-16io1
312-18io1
flb22h
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Untitled
Abstract: No abstract text available
Text: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il
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O-247
O-204
O-247
12N50A
100ms
4bfib22b
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Untitled
Abstract: No abstract text available
Text: • MbflbS2b GQGlbS3 b^S H I X Y a ix Y S Thyristor Modules MCC19 iTAV= 2 x 18 A Vrpm = 600-1600 V i 1 1 > > > ; 1 1 1 > > > 700 900 1300 1500 1700 Type Version 1 B 600 800 1200 1400 1600 MCC19-06ÌO1 MCC19-08io1 MCC19-12io1 MCC19-14io1 MCC19-16io1 Symbol
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MCC19
MCC19-06Ã
MCC19-08io1
MCC19-12io1
MCC19-14io1
MCC19-16io1
MCC19-06io8
MCC19-08Ã
MCC19-12ioÃ
MCC19-14io6
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Untitled
Abstract: No abstract text available
Text: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR
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IXTN79N20
OT-227
4bfib22b
DQ02201
79N20
4bflb22b
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IXGH24N60BU1
Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
24N50
HIPERFAST IGBT WITH DIODE
24N60
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Untitled
Abstract: No abstract text available
Text: 4 b ß b 2 2 b Q G O I S S D TTS « I X Y □IXYS Dual Power MOSFET Modules VMM 32-045 ID cont = 32 A v* D S S □ DS(on) = 450 V = 0.13 Q 4= 4444=4 7 3 4 N-Channel Enhancement Mode 8 6 2 1 Prelim inary data Symbol Test Conditions V * Tj = 25'C to 150‘ C
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D-6840
Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
Text: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.
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IXBD4410/4411)
1503A
IXBD4410
IXBD4411
IXBD4412
IXBD4413
10OOpF
100ns
000pF
D-6840
transistor BD 441
IXBD 4413
efu dual mosfet
POB11SO
BD4410PI
4410PI
ixys vco 52
full bridge igbt induction heating generator
2675000101
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Untitled
Abstract: No abstract text available
Text: ISOSMART Half Bridge Driver Chipsets Type Description Package IXBD4410PI IXBD4411 PI Full-Feature Low-Side Driver Full-Feature High-Side Driver 16-Pin P-DIP 16-Pin P-DIP -40 to +85°C -40 to +85°C • IXBD441 OSI IXBD4411SI Full-Feature Low-Side Driver
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IXBD4410PI
IXBD4411
16-Pin
IXBD441
IXBD4411SI
IXBD4412PI
IXBD4413PI
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Untitled
Abstract: No abstract text available
Text: I IXLN 35N120A IGBT V CES IC25 V CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Maximum Ratings Symbol Test Conditions v CES Tj = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C;' F U = 1 MC2 (a t 1200 V v GES Continuous
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35N120A
OT-227
250fc
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Untitled
Abstract: No abstract text available
Text: □ IXYS IGBT Module VII125-12G4 IC DC Half-Bridge Configuration V , CES = 125 A = 1200 V V CE(sat) = 2.9 V High Short Circuit SOA Capability Symbol Test C onditions VCES Tj = 25°C to 150°C T,J = 25°C to 150°C;’ RCat ^ = 1 M fl Maximum Ratings 1200
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VII125-12G4
4bfib22b
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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IXSE502
Abstract: No abstract text available
Text: HbflbSBb DDG13flb 3 ^ • IXY □ IXYS Data Sheet No. 915502A July 1993 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 Features Direct two-channel Quadrature Inputswith Schmitt Trigger Circuitry X4 Quadrature Detection for High Resolution EXTERNAL EVENT Detection and Latching for
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DDG13flb
15502A
IXSE502
IXSE502
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Untitled
Abstract: No abstract text available
Text: □IXYS ISOSMART IGBT Module VIE100-12S4 lc =100 A VCES = 1200 V Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C
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VIE100-12S4
V1E10CM
4bflb22b
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1.8 degree bipolar stepper motor
Abstract: No abstract text available
Text: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution
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IXMS150
24-Pin
4bfib22b
1.8 degree bipolar stepper motor
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Untitled
Abstract: No abstract text available
Text: High Power Diode Modules v RSM VRRM V V 900 1300 1500 1700 Symbol ^FAVM ^FSM Type MDD MDD MDD MDD Maximum Ratings Test Conditions 450 290 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine 11 000 11 700 9000 9600 A A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
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2x450A
250-08N1
4bfib22b
D003Hb7
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PDF
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Untitled
Abstract: No abstract text available
Text: MbflhSEb 0 0 0 1 5 3 3 'ìlb * I X Y IXSN51N60AU1 IGBT with Diode IC25 VCES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions v" c e s Tj = 25'C to 150‘C 600 V v COR Tj = 25’ C to 150‘C; RGE= 1 Mi2
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IXSN51N60AU1
OT-227
VOE-15V.
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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