Untitled
Abstract: No abstract text available
Text: International ggg] Rectifier 4fl55452 0015blt 37b • INR HEXFET Power MOSFET INTERNATIO NAL • • • • • • PD-9.542B IRFPF50 r e c t if ie r Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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4fl55452
0015blt
IRFPF50
O-247
O-220
O-247
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1N1183
Abstract: 1N1186RA 1N1184 1N1183A 1N1184A 1N2128A 1N3765 IN118 TQ140 INI183
Text: SS DE I 4fl55452 4855452 00Em40 T |~~ 5 5C INTER N A T I O N A L R E C T I F I E R D 04940 Data Sheet No. PD-2.087 r - t f / - IN TER N A TIO N A L R E C T IF IE R T 'I IÖR 1N1183, 1N3765, 1M11S3A, 1NS1S8A SERIES 35, 4 0 and 6 0 Amp Power Silicon Rectifier Diodes
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00Em40
11X11183,
1N3765,
1N11B3A,
1N2128A
in1183
1n3765
1n1183a
1N1183
1N1186RA
1N1184
1N1184A
IN118
TQ140
INI183
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OA210
Abstract: 10BS IR FAST RECOVERY
Text: 4855452 INTERNATIONAL RECTIFIER 02E 07924 D E 4fl55452 DQOVTEM 4 03-J23 Data Sheet No. PD-2.108 in t e r n a t io n a l , r e c t i f ie r IO R D | R30DF AND R30DFR SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 210 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES
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R30DF
R30DFR
R30DF
2000v
1600v
R300FR18A.
OA210
10BS
IR FAST RECOVERY
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IG8T
Abstract: DIODE 65A IRGKI065F06 82FL
Text: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses
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IRGKI065F06
10KHz
50KHz
100nH
C-170
IG8T
DIODE 65A
IRGKI065F06
82FL
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IRGNIN075M12
Abstract: diode C522 C524 DIODE
Text: PD9164 IRGNIN075M12 International S Rectifier "CHOPPER HIGH SIDE SWITCH' IGBTINT-A-PAK Low conduction loss IGBT High Side Switch -=3 VCE= 1200V lc = 75A 50-• Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGNIN075M12
50---VCE=
C-525
4fl55452
C-526
002031b
IRGNIN075M12
diode C522
C524 DIODE
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IRFS1Z0
Abstract: 75150TC
Text: • International H g Rectifier HÛSSHSE 001574Ô flb? M I N R PD-9.438D IRFS1Z0 INTERNATIONAL RECTIFIER HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount Available in Tape & Reel Fast Switching Ease of Paralleling
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OT-89
5S452
IRFS1Z0
75150TC
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D0205AB
Abstract: D0-205AB
Text: 4855452 INTERNATIONAL RECTIFIER IO R in t e r n a t i o n a l 73 73C 07174 D T"-*/-2-3 Data Sheet No. PD-2.136 r e c t if ie r D E | 4 f l 5 S 4 S e 0007174 T R23D & R23DR SERIES 1400 - 800 VOLTS RANGE 315 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES
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R23DR
D0-205AB
R23DR12A.
4flSS455
00D717fl
D0205AB
D0-205AB
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4AF Series
Abstract: 8AF4 4af05 international rectifier 137
Text: ~55 INTERNATIONAL RECTIFIER 4855452 IN T E R N A T IO N A L I F|4fl554SS □DOMciB4 3 55C R E C T IF IE R 04934 Data Sheet No. PD-2.086 r~ o i - t ? ' f ï &i'¿a IOR INTERNATIONAL RECTIFIER 4AF, 8AF SERIES S5 and 50 Amp Pressfit Rectifier Diodes Major Ratings and Characteristics
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4fl554SS
4AF Series
8AF4
4af05
international rectifier 137
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Untitled
Abstract: No abstract text available
Text: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =
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IRFIZ44N
0D23bc
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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554S2
4fl55452
10ohm
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Untitled
Abstract: No abstract text available
Text: Jp|j-0fpi QtjOfi QI Provisional Data Sheet No. PD-9.424B IGR Rectifier JANTX2N6784 HEXFET POWER MOSFET JANTXV2N6784 [REF:MIL-PRF-19500/556] [GENERIC:IRFF210] N -C H A N N E L 200 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis
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JANTX2N6784
JANTXV2N6784
MIL-PRF-19500/556]
IRFF210]
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Untitled
Abstract: No abstract text available
Text: PD - 9.1672A International IS R Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling D escription Voss= 60V
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IRFZ34E
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Untitled
Abstract: No abstract text available
Text: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching
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IRFR2605)
IRFU2605)
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4 Ô 5 5 45 2 0 0 1 7 3 0 b Û21 PD -2.255 International S Rectifier i 63 c m q . s e r i e s SCHOTTKY RECTIFIER 160 Amp Description/Features Major Ratings and Characteristics 163CMQ. Units Characteristics 160 A 80 to 100
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163CMQ.
-55to175
163CMQ
D-351
4fl55452
D173BT
D-352
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Untitled
Abstract: No abstract text available
Text: 4855452 INTERNATIONAL RECTIFIER I« R 73C 07143 D. T z O f * ’ '¿-3 Data Sheet no. k u - z . i 33 INTERNATIONAL RECTIFIER 73 DE | MflSii4ic! UUUV143 T R18C, R18S, R18CR & R18SR SER IES 1800 - 1200 VOLTS RANGE 185 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIO DES
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UUUV143
R18CR
R18SR
R18CR16A.
4fl55452
DDD7147
D0-30)
R18CR
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Untitled
Abstract: No abstract text available
Text: P D - 9.1025 bitemational [ïôrIRectifier_ IRGPF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF20F
10kHz)
C-253
4fl55452
O-247AC
C-254
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Untitled
Abstract: No abstract text available
Text: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses
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IRGBC20MD2
10kHz)
O-22QAB
C-356
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Untitled
Abstract: No abstract text available
Text: PD-9.1209 International J3R R ectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
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IRFI740GLC
D-6380
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Untitled
Abstract: No abstract text available
Text: PD - 9.1505A International I R Rectifier IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S IQ E ji-i / p T Voss = -30V RDS on = 0.058Q Top View Description
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IRF7316
DD2b234
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Untitled
Abstract: No abstract text available
Text: PD - 5.025A International [iggRectifier CPV364MU IGBT SIP MODULE Ultra-Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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CPV364MU
360Vdc,
th704
C-764
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2111
IR2111
5M-1982
M0-047AC.
554S2
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IO R 73 De | m ö 5S452 0007151 0 I Data Sheet No. PD-3.171 in t e r n a t io n a l , r e c t if ie r S52KF SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 10 fjs 2060 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS
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5S452
S52KF
S52KF4B.
000715b
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IO R 73 D | MflSSMSa □0071ÖM i f T'-¿>/' 2'3 Data Sheet No. PD-2.134 In t e r n a t i o n a l , r e c t i f i e r R23D & R23DR SERIES 600 - 400 VOLTS RANGE 350 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS
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R23DR
D0-205AB
R23DGR4A.
4fl55452
00071flfl
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international rectifier data book
Abstract: No abstract text available
Text: International XOR Rectifier ADVANCED INFORMATION Data Sheet No. FD6Ö160 IPS5551T FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Product Summary • O ver temperature shutdown • O ver current shutdown • Active clamp • Input referenced to + Vcc
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IPS5551T
international rectifier data book
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