4FL55M Search Results

Contextual Info: — — : OE DE I 4fl55M52 O ü D T ö C H I O R l INTERNATIONAL RECTIFIER 4855452 *4 | INTERN ATION AL R E C T I F I E R Data Sheet No PD-3 109 U3ïa öneei l>10* r u O. Ili» ~ 02E 07809 D 7 S52K SERIES 800-200 VOLTS R A N G E 2700 AM P RMS, RING AMPLIFYING GATE

ior e78996

Abstract: E78996 ior
Contextual Info: INTERNATIONAL RECTIFIER bSE » WÊ 4055452 DDlbBll T3T • INR Bulletin E27111 International ^ 1 Rectifier IRFK6H250,IRFK6J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

Contextual Info: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800

Contextual Info: INTERNATIONAL RECTIFIER 05 DF|MfiSS4S2 0 0 0 7 t . 3 Data Sheet No. PD-3.130 IIO R I in te r n a tio n a l r e c t if ie r S30D & S30DH SERIES 1200-600 VOLTS RANGE 440 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS VOLTAGE

international rectifier GTO

Abstract: T120 16A ior scr it900 FULL WAVE RECTIFIER CIRCUITS with scr 500v 50a scr INTERNATIONAL RECTIFIER scr 150a gto 150PFT200 150PFT250
Contextual Info: in te rnational rectifTêr " 73 »F |4 fl ss 4s a o o o t s 7 i 3 |'r-xs-/? Data Sheet No. PD-3.086 IN T E R N A T IO N A L R E C T IF IE R TOR 1 5 0 PFT SERBES GODA I7QQ Gate Türn-Off Hockey Puk SCRs Description/Features Major Ratings and Characteristics

transistor 9721

Abstract: 9721 mosfet to3
Contextual Info: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve

Contextual Info: International I R Rectifier Provisional Data Sheet No. PD-9.1475 REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.32Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

Contextual Info: International [^Rectifier PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching

Contextual Info: Data Sheet No. PD-9.67DA INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7110 N-CHANNEL RAD HARD 100 Volt, 0.7DQ, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

BFE smd diode

Abstract: SMD rectifier 729 mosfet smd SSs smd diode marking 1Ss Diode BFE smd MR 4011 smd marking 6z sol 4011 be IRFL014 IRFL5505
Contextual Info: P D -9.1622 International IQ R Rectifier IRFL5505 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Voss = -55V R DS on = 0 .1 1

110MT

Abstract: 90MT80K 110MT120K INR d22 110MT100K 110MT80K 90MT 90MT100K 90MT120K 90MT140K
Contextual Info: international Rectifier I - international rectifier - ^se d m | 4 5 5 5 4 5 2 o a i b s o 4 bbD * i n r s e r ie s m t k THREE PHASE BRIDGE Power Modules 90A 110A Features • Package fully compatible with the industry standard INT-A-pak power modules series

Contextual Info: Bulletin 12035/A International S R ectifier S D 6000C .R SER IES STANDARD RECOVERY DIODES Hockey Puk Version Features • W id e cu rrent rang e ■ H igh vo ltag e ratings up to 2 4 0 0 V ■ H igh su rg e cu rrent ca p ab ilitie s ■ D iffu sed junction

Contextual Info: International !“R Rectifier HEXFET Power MOSFET • • • • • • 485545E DDlSEDfl b7 b • INR p D.9.838 IRFI9630G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage Isolation^ 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm P-Channel

Contextual Info: j p j -0 p p Q I j Q p| Q I Provisional Data Sheet No. PD-9.430B I O R Rectifier JANTX2N6796 HEXFET POWER MOSFET JANTXV2N6796 [REF:MIL-PRF-19500/557] [GENERIC:IRFF130] N -C H A N N E L 100 Volt, 0.180 HEXFET Product Summary1 H E X F E T techn o lo g y is th e key to Intern ation al

Contextual Info: Bulletin 125191 IB International ¡iqrIRectifier ST730C.L series PHASE CONTROL THYRISTORS Hockey Puk Version Features C en ter am plifying gate M etal ca se with ceram ic Insulator International standard case T Q -2 0 0 A C B -P U K Typical Applications

Contextual Info: INTERNATIONAL RECTIFIER bSE D • M Ö S S 4S 2 0 D 1 Ö 21 4 b41 ■ INR Provisional Data Sheet P D -6.0 26 INTERNATIONAL RECTIFIER I « R POWER MOSFET/IGBT GATE DRIVER IR2112 General Description Features The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high

Contextual Info: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: PD-2.445 International ¡k?r]Rectifier HFA280NJ60C Ultrafast, Soft Recovery Diode HEXFRED LUG TERM INAL A NO D E 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 V r = 600V

Contextual Info: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

Contextual Info: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage

Contextual Info: PD-9.998 International k? r Rectifier IRFP344 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 450 V R DS on = 0 -6 3 Q

E.78996

Abstract: E.78996 scr E 78996 78996 d114 D113 T-25 40A 1000v scr
Contextual Info: • ■ H B ■- | ■ r n a H O n a i Db3 ■ INTERNATIONAL R E C T I F I E R Rectifier Power Modules 40A Features Glass passivated junctions for greater reliability Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V DRM High surge capability

IRFIP044

Abstract: DIODE B4N S4 43a DIODE 9740 marking
Contextual Info: HÛSSHS2 001SEÔG b*4û B I N R International iQg Rectifier _ IRFIP044 INTERNATIONAL REC TIFIER HEXFET Power MOSFET • • • • • • • PD-9.740 Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm