AN2148
Abstract: sdram controller FFF106 FFF116 MC68VZ328
Text: Design Considerations for Interfacing SDRAM with MC68VZ328 Application Note by Bryan C. Chan PRELIMINARY AN2148/D Rev. 0, 5/2001 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability
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MC68VZ328
AN2148/D
AN2148
sdram controller
FFF106
FFF116
MC68VZ328
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infineon b 58 468 la intel 80
Abstract: N53A intel dh40 Dh49 as15 h PM5384-NI sd transistor 1HD S26 photodiode N42B Dh46
Text: User’s Manual MSC8102UM/D Version 1.2 December 17, 2002 MSC8102ADS User’s Manual Motorola, Inc., 2002 Important Notice to Users While every effort has been made to ensure the accuracy of all information in this document, Motorola assumes no liability to any party for any loss or
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MSC8102UM/D
MSC8102ADS
MSC8102ADSUM/D
infineon b 58 468 la intel 80
N53A
intel dh40
Dh49
as15 h
PM5384-NI
sd transistor 1HD
S26 photodiode
N42B
Dh46
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Untitled
Abstract: No abstract text available
Text: W D EEH4164MEV-RP 4Megx16 EDODRAM I ELECTRONIC. DESIGNS, INC 4 Mepbit x 16 Dynamic RAM 33 V, ExtendedData Out Features EDI's ruggedized plastic 4Mx16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic Random Access Memory
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EEH4164MEV-RP
4Megx16
4Mx16
EDI4164MEV50SM
EDI4164MEV60SM
EDI4164MEV70SM
EDI4164MEV50SI
EDI4164MEV60SI
EDI4164MEV70SI
U-024
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DQ131
Abstract: MT48LC16M16A2TG8E
Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron
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192-cycle
MT48LC64M4A2
MT48LC32M8A2
54-PIN
256Mb
256MSDRAM
DQ131
MT48LC16M16A2TG8E
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI4164MEV-RP 41/leg x16 EDO DRAM ELECTRONIC DESIGNS, INC ADVANCED 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic
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EDI4164MEV-RP
41/leg
cydes/64m
EDI4164MEV-RP
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron
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MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PCI00-compliant;
54-PIN
256Mb:
256MSDRAM
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I^ P n M 8 I 256Mb: x4, x8, x16 DDR SDRAM MT46V64M4 - 16 Meg x 4 x 4 banks MT46V32M8 - 8 Meg x 8 x 4 banks MT46V16M16- 4 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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256Mb:
MT46V64M4
MT46V32M8
MT46V16M16-
66-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC4M16K2/F5 4 MEG X 16 DRAM |v ic n o N DRAM 4 MEG x 16 DRAM 3.3V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View) • Sin gle +3 .3 V + 0 .3 V p o w er sup p ly • Ind u stry-stan d ard x l 6 p in o u t, tim ing , fu n ctio n s and p ackages
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MT4LC4M16K2/F5
096-cy
50-Pin
MT4LC4M16K2iT5
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EDI4164MEV50SM
Abstract: ed09 EDI4164MEV-RP Edd 44 EDI4164MEV60SM EDI4164MEV60SI EDI4164MEV
Text: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS. INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic
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EDI4164MEV-RP
4Megx16
cycles/64ms
4Mx16
EDI4164MEV60SM
EDI4164MEV70SM
EDI4164MEV50SI
EDI4164MEV60SI
EDI4164MEV70SI
01581USA
EDI4164MEV50SM
ed09
EDI4164MEV-RP
Edd 44
EDI4164MEV
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