Untitled
Abstract: No abstract text available
Text: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3660QG Description Placement The TS4M3660QG is a 4M by 36-bit dynamic RAM module with 8pcs of 4Mx4 DRAMs and one 4Mx4 B QuadCAS DRAM assembled on the printed circuit board. C The TS4M3660QG is optimized for application to
|
Original
|
TS4M3660QG
TS4M3660QG
36-bit
TS4M3660Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72PIN FAST PAGE SIMM 16MB With 4Mx4 60ns TS4M3660QG Description Features The TS4M3660QG is a 4M by 36-bit dynamic RAM module • Fast Page Mode operation. with 8pcs of 4Mx4 DRAMs and one 4Mx4 QuadCAS • Single +5.0V ± 10% power supply. DRAM assembled on the printed circuit board.
|
Original
|
72PIN
TS4M3660QG
TS4M3660QG
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3660Q Description Features The TS4M3660Q is a 4M by 36-bit dynamic RAM module • 4,194,304-word by 36-bit organization. with 8pcs of 4Mx4 DRAMs and one 4Mx4 QuadCAS • Fast Page Mode operation. DRAM assembled on the printed circuit board.
|
Original
|
TS4M3660Q
TS4M3660Q
36-bit
304-word
TS4M3660Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C
|
Original
|
M53620812CW0/CB0
M53620812CW0/CB0
M53620812C
8Mx36bits
M53620812C
24-pin
28-pin
72-pin
M53620812CW0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D
|
Original
|
M53620812DW0/DB0
M53620812DW0/DB0
M53620812D
8Mx36bits
M53620812D
24-pin
28-pin
72-pin
M53620812DW0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C
|
Original
|
M53640812CW0/CB0
M53640812CW0/CB0
M53640812C
8Mx36bits
M53640812C
24-pin
28-pin
72-pin
M53640812CW0
|
PDF
|
c60 equivalent
Abstract: dram 4mx4 kmm5364
Text: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C
|
Original
|
M53620412CW0/CB0
M53620412CW0/CB0
M53620412C
4Mx36bits
M53620412C
24-pin
28-pin
72-pin
M53620412CW0
c60 equivalent
dram 4mx4
kmm5364
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D
|
Original
|
M53620412DW0/DB0
M53620412DW0/DB0
M53620412D
4Mx36bits
M53620412D
24-pin
28-pin
72-pin
M53620412DW0
|
PDF
|
64mb edo dram simm
Abstract: K4E160411C
Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C
|
Original
|
M53640412CW0/CB0
M53640412CW0/CB0
M53640412C
4Mx36bits
M53640412C
24-pin
28-pin
72-pin
M53640412CW0
64mb edo dram simm
K4E160411C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PcRam TS4MED3660 Description Features The TS4MED3660 is a 4M by 36-bit dynamic RAM • 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and one 4Mx4 • Fast Page Mode with Extended Data Out. QuadCAS DRAM assembled on the printed circuit
|
Original
|
TS4MED3660
TS4MED3660
36-bit
304-word
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 168PIN EDO FPM Buffered DIMM 64MB With 4Mx4 60ns TS8MLE646T Dimensions Description The TS8MLE646T is a 8M bit x 64 Dynamic RAM high Side Millimeters Inches density memory module. The TS8MLE646T consists A 133.35±0.40 5.250±0.016 of 32pcs CMOS 4Mx4 bit DRAMs and 2pcs of 16bits
|
Original
|
168PIN
TS8MLE646T
TS8MLE646T
32pcs
16bits
168-pin
608-word
64-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72 PIN EDO SIMM 16MB With 4Mx4 60ns TS4MED3260 Description Features The TS4MED3260 is a 4M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 8 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
|
Original
|
TS4MED3260
TS4MED3260
32-bit
|
PDF
|
simm EDO 72pin
Abstract: No abstract text available
Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
|
Original
|
72PIN
TS8MED3260
TS8MED3260
32-bit
simm EDO 72pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PcRam TS8M3660Q Description Features The TS8M3660Q is a 8M by 36-bit dynamic RAM • 8,388,608-word by 36-bit organization. module with 16 pcs of 4Mx4 DRAMs and 2 pcs of • Fast Page Mode Operation. 4Mx4 Quad Cas assembled on • Single +5.0V±10% power supply.
|
Original
|
TS8M3660Q
TS8M3660Q
36-bit
608-word
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 32MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS8M3260 Description Features The TS8M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 16 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.
|
Original
|
TS8M3260
TS8M3260
32-bit
TS8M3260
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3260 Description Features The TS4M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 8 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.
|
Original
|
TS4M3260
TS4M3260
32-bit
|
PDF
|
we 510
Abstract: No abstract text available
Text: UG18M83602KBT-6AT 32M Bytes 8M x 36 DRAM 72Pin SIMM w/Parity based on 4M X 4 General Description Features The UG18M83602KBT-6AT is a 8,388,608 bits by 36 SIMM module. The UG18M83602KBT-6AT is assembled using 16 pcs of 4Mx4 2K refresh DRAMs 2 pcs of 4Mx4
|
Original
|
UG18M83602KBT-6AT
72Pin
UG18M83602KBT-6AT
1000mil)
we 510
|
PDF
|
hym7v64400
Abstract: No abstract text available
Text: HYM7V64400B K-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 4Mx4 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit
|
Original
|
HYM7V64400B
4Mx64
168-pin
168Pin
hym7v64400
|
PDF
|
hosiden DC motor 12V
Abstract: debug codes FD-04HG-2600 samsung lcd monitor circuit diagram lt121s1 lt121s1-153 teac fd samsung crt tv block diagram SAMSUNG LT121S1 Toshiba color tv lcd Circuit Diagram schematics HOSIDEN MOTOR
Text: Model 6200A Service Manual The circuit schematics herein provided for reference only are not necessarily the latest version. Mainboard D/D 3.3V CPU Power 2.2V2.45V/2.8V CPU Power Charger & Switch Board LCD Bar 1Mx16 8/16MB Memory 4Mx4 32MB Memory 4Mx4 40MB Memory
|
Original
|
1Mx16
8/16MB
77-62000-D07C
77-6200C-D03
77-620A5-D10
77-620A5-D50-A
77-6200S-D13
77-62006-D02
77-6202T-D71
77-2205T-060
hosiden DC motor 12V
debug codes
FD-04HG-2600
samsung lcd monitor circuit diagram lt121s1
lt121s1-153
teac fd
samsung crt tv block diagram
SAMSUNG LT121S1
Toshiba color tv lcd Circuit Diagram schematics
HOSIDEN MOTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16MB 72 PIN FPM DRAM SIMM With 4Mx4+4Mx1 5VOLT TS4M3660G Description The TS4M3660G is a 4M by 36-bit dynamic RAM Features module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 • 4,194,304-word by 36-bit organization. DRAM assembled on the printed circuit board.
|
Original
|
TS4M3660G
TS4M3660G
36-bit
304-word
TS4M3660G
|
PDF
|
4MX72 BIT SDRAM
Abstract: No abstract text available
Text: HYM7V72A400B K-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400B is high speed 3.3Volt synchronous dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in 44-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin
|
Original
|
HYM7V72A400B
4Mx72
44-pin
168-pin
4MX72 BIT SDRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PcRam Description TS8MED3660 Dimensions The TS8MED3660 is a 8M by 36-bit dynamic RAM module with 16 pcs of 4Mx4 DRAMs and 2 pcs of 4Mx4 Quad Cas assembled on Side the printed circuit A Millimeters Inches 107.95± 0.20 4.25±0.008 board. B 6.35 0.25 The TS8MED3660 is optimized for application to
|
Original
|
TS8MED3660
TS8MED3660
36-bit
TS8MED3660--
|
PDF
|
MSC23Q836D
Abstract: No abstract text available
Text: This version: Mar. 6. 2000 Semiconductor MSC23Q836D-xxBS18/DS18 8,388,608-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23Q836D-xxBS18/DS18 is an 8,388,608-word x 36-bit CMOS dynamic random access memory module which is composed of sixteen 16Mb DRAMs 4Mx4 in SOJ packages and two 16Mb DRAMs (4/CAS 4Mx4) in SOJ
|
Original
|
MSC23Q836D-xxBS18/DS18
608-word
36-bit
MSC23Q836D-xxBS18/DS18
72-pin
MSC23Q836D
|
PDF
|
4m dram 72-pin simm 32
Abstract: No abstract text available
Text: UG9M43602 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43602(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43602(4)KBG(T) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4
|
Original
|
UG9M43602
72Pin
300mil
1000mil)
4m dram 72-pin simm 32
|
PDF
|
