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    4N03L03

    Abstract: ANPS071E IPD90N03S4L-03 PG-TO252-3-11
    Text: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPD90N03S4L-03 PG-TO252-3-11 4N03L03 4N03L03 ANPS071E IPD90N03S4L-03 PG-TO252-3-11

    4N03L03

    Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    PDF IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L02 IPI80N03S4L-03 4N03L03 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd

    4N03L03

    Abstract: 4n03l02 IPB80N03S4L-02 4n03L
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-03 PG-TO263-3-2 4N03L03 4n03l02 4n03L

    4N03L04

    Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    PDF IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03

    4N03L04

    Abstract: IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    PDF IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2

    4N03L03

    Abstract: IPD90N03S4L-03 PG-TO252-3-11 4n03
    Text: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3.3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPD90N03S4L-03 PG-TO252-3-11 4N03L03 85ices 4N03L03 IPD90N03S4L-03 PG-TO252-3-11 4n03

    4N03L03

    Abstract: No abstract text available
    Text: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original
    PDF IPD90N03S4L-03 PG-TO252-3-11 4N03L03 4N03L03

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original
    PDF IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03

    4N03L02

    Abstract: No abstract text available
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L02 IPI80N03S4L-03 4N03L02