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Catalog Datasheet	MFG & Type	Document Tags	PDF
4N03LH0 Abstract: PG-TO263-7-3 IPB180N03S4L-H0 4n03 smd marking E R Text: IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on 0.95 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)	Original	IPB180N03S4L-H0 PG-TO263-7-3 4N03LH0 4N03LH0 PG-TO263-7-3 IPB180N03S4L-H0 4n03 smd marking E R	PDF

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4N03LH0

Abstract: PG-TO263-7-3 IPB180N03S4L-H0 4n03 smd marking E R
Text: IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on 0.95 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

Original

IPB180N03S4L-H0 PG-TO263-7-3 4N03LH0 4N03LH0 PG-TO263-7-3 IPB180N03S4L-H0 4n03 smd marking E R

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