tc 971
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-N
4N60-N
QW-R502-971.
tc 971
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4n60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-Q
4N60-Q
QW-R502-972
4n60l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and
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QW-R502-061
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-E
4N60-E
QW-R502-970.
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mosfet 4n60
Abstract: 4n60e
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-E
4N60-E
QW-R502-970
mosfet 4n60
4n60e
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-N
4N60-N
QW-R502-971
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-061
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4n60e
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N60-E
4N60-E
QW-R502-970
4n60e
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-061.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-S
4N60-S
QW-R502-973
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-S
4N60-S
QW-R502-973.
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utc 4n60l
Abstract: 4n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N60-Q
4N60-Q
QW-R502-972
utc 4n60l
4n60l
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4n60f
Abstract: 4N60P
Text: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-251)
O-252)
O-251
O-252
O-252
13-Apr-2011
4n60f
4N60P
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utc 4n60l
Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220
O-220F
O-220F1
QW-R502-061
utc 4n60l
4N60L-TA3-T
4n60l
4n60e
mosfet 4n60
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4N60C
Abstract: mosfet 4n60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-C Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F1 TO-220F The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-C
O-220F1
O-220F
4N60-C
O-220F2
O-252
QW-R502-A42
4N60C
mosfet 4n60
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utc 4n60l
Abstract: 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-220F
O-220F1
QW-R502-061
utc 4n60l
4N60B
4n60e
4n60l
4N60G
4N60
UTC4N60
4n60a
utc 4n60g
4n60b TO220
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4N60B
Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-262
O-220F
QW-R502-061
4N60B
UTC4N60
4n60a
4N60-B
4n60
UTC 4N60L
4N60 TO-251 UTC
4n60l
4n60b TO220
mosfet 4n60
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4N60B
Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-251
O-220F
O-220F1
O-252
QW-R502-061
4N60B
4N60 TO-251 UTC
4n60b TO220
k4n60
4n60
mosfet 4n60
4N60 TO-220 UTC
utc 4n60l
4n60l
4n60a
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TO252 rthjc
Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
Text: 4N60 4 Amps， ，600Volts N-Channel MOSFET • Description The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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Amps600Volts
ET4N60
O-220
O-220F
O220F
TO252 rthjc
4N60 TO-252
4n60 to252
4n60
mosfet 4n60
4N60 application note
TO-252
16nC
TO-252 N-channel MOSFET
TO-252 N-channel power MOSFET
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability
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O-220F
O-220
O-220F1
O-220F2
QW-R502-061
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability
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O-220F
O-220
O-220F1
O-220F2
QW-R502-061
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utc 4n60l
Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability
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O-220
O-220F
O-220F1
O-220F2
QW-R502-061
utc 4n60l
4n60e
mosfet 4n60
utc 4n60g
4N60
4n60l
4N60-E
UTC4N60
4N60G-TQ3-T
A4N60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @V GS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
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O-220
O-220F1
O-220F2
O-251
O-262
O-220F
QW-R502-061.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @ V GS =10 V, I D =2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA
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4N60-S
O-220
O-220F1
O-220F2
O-251
O-262
O-220F
4N60-S
QW-R502-973.
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