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    ITT Interconnect Solutions FRVE97ANRBF40A-24S-50140-0201-VO

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    Mouser Electronics FRVE97ANRBF40A-24S-50140-0201-VO
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    Vlier P304S514

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    Bisco Industries P304S514 49
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    4S514 Datasheets Context Search

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    macrocell ecl

    Abstract: 4S514
    Text: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra­ tion (VLSI) monolithic integrated circuit built using


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    PDF 4SS14S3 0000D43 T-42-11-13 HE8000 HE8000 10K/KH macrocell ecl 4S514

    64 PIN CERDIP

    Abstract: No abstract text available
    Text: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico­ second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation


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    PDF 4SS14S3 T-42-11-15 HM1000R 10K/KH 45S14S3 HM1000R 64-Pin 64 PIN CERDIP

    Untitled

    Abstract: No abstract text available
    Text: HOA1406 Reflective Sensor tNfRA-84.TIF DESCRIPTION The HOA1406 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1406-001 or photodarlington (HOA1406-003) encased side-by-side on converging optical axes, in a black thermoplastic housing. The detector responds to


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    PDF HOA1406 HOA1406-001) HOA1406-003)

    Untitled

    Abstract: No abstract text available
    Text: HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed a 1 GHz DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier packaged for high-speed data communications. The


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    PDF HFD3380-302 HFD3380-302 MSS1S30 4S5143D Q02E06S

    transistor a473

    Abstract: A473 transistor conhex chip die npn transistor CML ECL compatible
    Text: HONEYWELL "DIGITAL PRODUCT bt. dË | MSS1M5B ODOOOEt. T f' T-42-11-13 MARCH 1985 ECL GATE ARRAY HE2000 PRODUCT DESCRIPTION The HE2000 Gate Array Figure 1 is a 300 picosecond, 2000 equivalent gate density Very Large Scale Integration (VLSI) monolithic integrated circuit built using Honeywell’s


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    PDF T-42-11-13 HE2000 HE2000 10K/KH transistor a473 A473 transistor conhex chip die npn transistor CML ECL compatible

    t4423

    Abstract: No abstract text available
    Text: HONEY WEL L DIGITAL PRODUCT hb D E j MSS14S3 OQOOOlfl 0 T-44-23' S AUGUST 1985 16K x 1 STATIC RAM HC6167R PRODUCT DESCRIPTION FEATURES The HC6167R is a 16,384-word by 1-bit static Random Access Memory RAM designed for strategic and tactical military applications. The HC6167R is fabricated


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    PDF MSS14S3 T-44-23' HC6167R 384-word 110-ns 20-pin HC6167R t4423