IG8T

Abstract: DIODE 65A IRGKI065F06 82FL
Contextual Info: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses

Contextual Info: Preliminary D ata Sheet 6 .0 5 0 A International IGR Rectifier IR6224 INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features • • • • • • • • • • PWM Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp

Contextual Info: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: P D - 9.1132 International d û Rectifier IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 1 Ops @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: PD -9.1137 International lögRectifier IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ms @ 125°C, V qe = 15V • Switching-ioss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

1RF9540

Abstract: c346 diode IRF9540 complementary c343 diode IRF3542 IRF9S40 IRF9540 irf354 diode c345 f*9540
Contextual Info: HE 0 I 4flSS452 QQDââ^M 3 | Data Sheet No. PD-9.421A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRF9540 IRF9541 P-CHANNEL 1GOVOLT POWER MOSFETs IRF3542 IRFS543 -1 0 0 Volt, 0.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

Contextual Info: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International

Contextual Info: 4fl5545E DD1457b T7E • INR International s ] Rectifier IRC740 INTERNATIONAL RECTIFIER HEXFET® P ow er M O S FE T • • • • • • PD-9.570B Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

A17a smd

Contextual Info: PD-9.1090 International j i g R ectifier_ IR L 6 4 0 S HEXFET Power MOSFET • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive • RDS on S pecified at V g s =4V & 5V