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    4V41 Search Results

    4V41 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    NV4V41SF Renesas Electronics Corporation Blue-Violet Laser Diode 405 Nm Blue-Violet Laser Light Source Visit Renesas Electronics Corporation
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    4V41 Price and Stock

    California Eastern Laboratories (CEL) NV4V41SF-A

    LASER DIODE 405NM 600MW TO18
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    Altech Corporation MT4/V-41-50

    MARKING TAG SET MT4 100 TAGS IMP
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    Mouser Electronics MT4/V-41-50
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    RS MT4/V-41-50 Package 5 Weeks 1
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    TestEquity LLC MT4/V-41-50
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    Vishay Foil Resistors VTA54V4 >150K-300KT

    Vta54V4 300K00 0.01% 130316 |Vishay Foil Resistors VTA54V4 >150K-300KT
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    Newark VTA54V4 >150K-300KT Bulk 1
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    Bimba Manufacturing Company M4V410-15-24VDC

    Valve, Sgl Solenoid, 1/2 Npt, 24Vdc, M4V Series | Bimba M4V410-15-24VDC
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    Bimba Manufacturing Company M4V410-15-12VDC

    VALVE, SGL SOLENOID, 1/2 NPT, 12VDC, M4V SERIES | Bimba M4V410-15-12VDC
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    4V41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U2353A

    Abstract: LZ2353A N5251 MG 811
    Text: LZ2353A LZ2353A 1/3 type Color CCD Area Sensor for NTSC PIN CONNECTIONS DESCRIPTION U2353A is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phot~iodes and CCDS (charge-coupled devices). Having approximately 410000 pixels (horizontal 811 X vertical 507), the


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    PDF LZ2353A U2353A 16-PIN 4930B 0B30B5 Ce80BI LZ2353A N5251 MG 811

    RLT1550_40G

    Abstract: No abstract text available
    Text: RLT1550-40G TECHNICAL DATA Infrared Laser Diode Features • • • • Lasing Mode Structure: Single mode Peak Wavelength : typ. 1550 nm Optical Ouput Power: 40 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1 2 3 Function


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    PDF RLT1550-40G 1-V417 2-V417 3-V417 4-V417e rlt1550 RLT1550_40G

    LZ2354AJ

    Abstract: U2354A 7 segment c dlh1 46E transistor 4P4 amplifier
    Text: LZ2354AJ 1/3 type B/W CCD Area Sensor for EIA LZ2354AJ PIN CONNECTIONS DESCRIPTION U2354J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 410000 pixels (horizontal 811 X vertical


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    PDF LZ2354AJ U2354J 16-PfN oB7088 4930B1 2354AJ LZ2354AJ U2354A 7 segment c dlh1 46E transistor 4P4 amplifier

    LZ2354J

    Abstract: TI206
    Text: LZ2354J LZ2354J 1/3 type B/W CCD Area Sensor for EIA PIN CONNECTIONS DESCRIPTION LZ2354J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 410000 pixels (horizontal 811 X vertical


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    PDF LZ2354J LZ2354J 16-PIN oB10B30B50B70B80Bll TI206

    M5M4V4169TP20

    Abstract: mitsubishi cdram M5M4V4169TP sram 3.3 16bit
    Text: MITSUBISHI LSIs 4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M 4V4169TP is a 4 M - b it Cached DRAM which integrates input registers, a 262, 1 44-w o rd by 1 6 - bit dynamic memory array and a 1 0 2 4 -word by 1 6 - bit static


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    PDF M5M4V4169TP-15 256K-WORD 16-BIT 1024-WORD 4V4169TP M5M4V4169TP20 mitsubishi cdram M5M4V4169TP sram 3.3 16bit

    TRW catalogue

    Abstract: No abstract text available
    Text: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,


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    PDF 4194304-BIT 262144-WORD 16-BIT 40P5P 40pin 475mil 24Tfl5S M5M4V4170J TRW catalogue

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The 4V4169TP is a 4 M - b it Cached DRAW which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1024-w o rd by 1 6 - bit static


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    PDF M5M4V4169TP-15 256K-WORD 16-BIT 1024-WORD M5M4V4169TP 1024-w 4V4169TP-15 4V4169TP-20 D054772

    Untitled

    Abstract: No abstract text available
    Text: 4V4100J,TP,RT-6,"7>8, -6S,-7S,-8S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 4 1 9 4 3 0 4 -w o rd by 1-b it dynamic RAMS, fabricated w ith the high performance CMOS process, and is


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    PDF M5M4V4100J 4194304-BIT 4194304-WORD

    262144-WORD

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is 4V4160J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family o f 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is


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    PDF M5M4V4160J 4194304-BIT 262144-WORD 16-BIT) 16-bit

    4V41

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is 4V4100J,TP,RT-6,-7,-8 -6S,-7S,-8S 3 FAST PAGE MODE 4194304 -BIT 4194304 -WORD BY 1-BrT DYNAMIC RAM DESCRIPTION This is a fam ily o f 4 1 9 4 3 0 4 -word by 1- b it dynamic RAMS, fabricated w ith the high performance CMOS process, and is


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    PDF M5M4V4100J 4V41

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M 5 M 4 V 4 1 6 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is


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    PDF 4194304-BIT 262144-WORD 16-BIT) 16-bit

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 4 V 4 1 0 0 J ,T P ,R T -6 ,-7 ,-8 , -6 S ,-7 S ,-8 S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 1-bit dynamic RAMS, fabricated with the high performance CMOS process, and is


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    PDF 4194304-BIT 4194304-WORD D0252Ã

    sram 3.3 16bit

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The 4V4169TP is a 4 M - b it Cached DRAM which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1 0 2 4 -word by 1 6 - bit static


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    PDF M5M4V4169TP-15 256K-WORD 16-BIT 1024-WORD M5M4V4169TP 40P0K J40-P-400-1 sram 3.3 16bit

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 4 V , 4 1 9 J , T P , R FEATURES 4V4190XX-6. -6S 4V4190XX-7, -7S 4V4190XX-8, -8S - 6 , - 7 , - 6 S , - 7 S , - 8 S RAS CAS Address ÜE Cycle ^ower access access access access time dissi­ time time time time pation max. ns (max. ns) (max. ns) (max. ns) (min. ns) (typ. n#0


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    PDF 4718592-BIT 262144-W0RD 18-BIT 262144-w

    Untitled

    Abstract: No abstract text available
    Text: L.ZM'iêZS 0 0 2 3 ^ M •■ni ? fioWepara«'< !l"C S om e P3' 5 M MITSUBISHI LSIs 707 ■ M I T I 4 V 4 1 9 0 J ,T P ,R T - 6 ,- 7 ,- 8 ,- 6 S ,- 7 S ,- 8 S fina, FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 262144-w ord by 1 8 -bit dynamic RAMs,


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    PDF 4718592-BIT 262144-WORD 18-BIT 262144-w

    Untitled

    Abstract: No abstract text available
    Text: LIE D m bEH'ifiSS DDITSÖT 00=5 •fllTl MITSUBISHI LSIs # M 5 5 M 4 V 4 1 0 0 J , L , T P , R T - 6 ,- 7 ,- 8 , -6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM MITSUBISHI (MEMORY/ASIC) DESCRIPTION PIN CONFIGURATION (TOP VIEW)


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    PDF 4194304-BIT 4194304-WORD 26P3Z 26pin 300mil

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 4 V 4 1 7 0 J , T P , R T - 6 ,-7 ,-8 ,-6 S ,- 7 S ,- 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 2 6 2 1 4 4 -w o rd by 1 6 -b it dynamic RAMs, fabricated w ith the high performance CMOS process, and is


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    PDF 4194304-BIT 262144-WORD 16-BIT

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs TARGET SPEC REV. 1.1 4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-W ORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary P IN C O N F IG U R A T IO N T h is d o c u m e n t is a p re lim in a ry T a rg e t S p ec, and so m e o f th e co n te n ts are


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    PDF M5M4V4169CRT-10 256K-W 16-BIT) 1024-WORD M5M4V4169CRT 144-word 16-bit 1024word

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM


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    PDF M66004SP/FP 16-DIGIT M66004 DIG11 4V4170J,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M p B B -' 5 M 4 V 4 1 9 0 J , T P , R T - 6 ,- 7 ,- 8 ,- 6 S ,- 7 S ,- 8 S N » N A .r V s,e <» A S T P A G E MODE 4718592-BIT 262144-WORD B Y 18-BIT DYNAMIC RAM D E SC R IP T IO N This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is


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    PDF 4718592-BIT 262144-WORD 18-BIT

    mitsubishi scr

    Abstract: M5M4V4169
    Text: MITSUBISHI LSIs 4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION Ths M 5 M 4V 416 9T P integrates input is a 4 M - b it Cached DRAM registers, a 2 6 2 , 1 4 4 - w o r d by which 1 6 - bit dynamic memory array and a 1 0 2 4 -w ord by 1 6 - bit static


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    PDF M5M4V4169TP-15 256K-WORD 16-BIT 1024-WORD mitsubishi scr M5M4V4169