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    5 PINS MOSFET Search Results

    5 PINS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    5 PINS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AQS610TS

    Abstract: AQS610TSX AQS610TSZ
    Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)


    Original     		PDF AQS610TS) 16-pin 083inch AQS610TS AQS610TSX AQS610TSZ

    Untitled

    Abstract: No abstract text available
    Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)


    Original     		PDF AQS610TS) 16-pin 083inch

    CX20551

    Abstract: MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta
    Text: 1 2 3 4 5 6 PCB STACK UP 8 CT6 BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : GND Calistoga / Yonah /ICH-7m CPU THERMAL SENSOR LAYER 3 : IN1 A 7 CPU Yonah/Merom LAYER 4 : IN2 LAYER 5 : VCC XXX Pins uPGA LAYER 6 : BOT 14.318MHz PG 5 PG 38 CLOCK GEN PG 3,4 SBLINKCLK, SBLINKCLK#


    Original     		PDF 318MHz MAX1845 56pins 16x16 MAX1544 OSC14M MAX1999 LED12 LED11 31CT6MB0016 CX20551 MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta

    CX20468-31

    Abstract: CX20468 MC9701 RS480M hp pavilion r62 hp pavilion g6 u2343 KBC-NS87551L IR7832 MFB902
    Text: 1 2 3 4 5 6 PCB STACK UP LAYER 2 : GND A DDR-SODIMM1 CLAW HAMMER / RS480 / SB400 CPU THERMAL SENSOR DDR 266,333,400MHz GMT-781 CPU CLAW HAMMER LAYER 4 : IN2 LAYER 5 : VCC 8 CT8 BLOCK DIAGRAM LAYER 1 : TOP LAYER 3 : IN1 7 14.318MHz 754 Pins uPGA DDR-SODIMM2


    Original     		PDF 400MHz GMT-781 RS480 SB400 318MHz MAX1845 CY28RS480/ ICS951412 16x16 MAX1544 CX20468-31 CX20468 MC9701 RS480M hp pavilion r62 hp pavilion g6 u2343 KBC-NS87551L IR7832 MFB902

    Untitled

    Abstract: No abstract text available
    Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 398 MOSFET Relays – G3VM-41LR3 Text J Text MOSFET Relays – G3VM-41LR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a


    Original     		PDF G3VM-41LR3 G3VM-41LR4 J963-E2-01

    G3VM-41LR3

    Abstract: "Common Precautions" for all G3VM models all mosfet list
    Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 396 MOSFET Relays – G3VM-21LR10 Text J Text MOSFET Relays – G3VM-41LR3 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a


    Original     		PDF G3VM-21LR10 G3VM-41LR3 G3VM-41LR4 J962-E2-01 G3VM-41LR3 "Common Precautions" for all G3VM models all mosfet list

    AQS610TS

    Abstract: AQS610TSX AQS610TSZ
    Text: AQS610TS TESTING GU General Use Type SOP Series Multi-function (1a1b MOSFET & optocoupler) 16 Pin Type 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins)


    Original     		PDF AQS610TS 16-Pin 083inch AQS610TS AQS610TSX AQS610TSZ

    G3VM-21GR1

    Abstract: G3VM-41GR4 41GR4
    Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 362 MOSFET Relays – G3VM-41GR3 Text J Text MOSFET Relays – G3VM-41GR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a group on


    Original     		PDF G3VM-41GR3 G3VM-41GR4 G3VM-21GR1 J957-E2-01 G3VM-21GR1 G3VM-41GR4 41GR4

    L6918

    Abstract: L6918A
    Text: L6918 L6918A 5 BIT PROGRAMMABLE MASTER/SLAVE MULTIPHASE CONTROLLER COMING SOON DESCRIPTION voltage between 1.1V and 1.85V in 25mV steps as required by VRM 9.0 processors specification. Master and slave devices share the same reference programmed by the VID pins.


    Original     		PDF L6918 L6918A SO-28 L6918 L6918A

    Untitled

    Abstract: No abstract text available
    Text: AN11374 Pin FMEA for NX3P switches Rev. 1 — 5 August 2013 Application note Document information Info Content Keywords FMEA Abstract This application note provides a Failure Modes and Effects Analysis FMEA for the device pins of NXP Semiconductors logic controlled high


    Original     		PDF AN11374 AN11052

    Si6433DQ

    Abstract: No abstract text available
    Text: Siliconix PĆChannel EnhancementĆMode MOSFET Si6433DQ Product Summary VDS V -12 rDS(on) (W) ID (A) 0.06 @ VGS = -4.5 V "4.0 0.10 @ VGS = -2.7 V "3.0 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6433DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6433DQ S42031Rev.

    Si6447DQ

    Abstract: No abstract text available
    Text: Si6447DQ Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G Si6447DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6447DQ 18-Jul-08

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6459DQ 18-Jul-08

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6459DQ 08-Apr-05

    Si6447DQ

    Abstract: No abstract text available
    Text: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6447DQ S-47958--Rev. 15-Apr-96

    S-49534

    Abstract: Si6433DQ
    Text: Si6433DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6433DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6433DQ S-49534--Rev. 06-Oct-97 S-49534

    smd transistor 6m

    Abstract: No abstract text available
    Text: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SI6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product V d s (V) -8 I Rd s io m ) (£2) I 0.012 @ VGS = -4 .5 V ±8.8 I 0.017 @ VGS = -2 .5 V ±7.4 I 0.025 @ VGs - -1.8 V ± 6 .0 I d (A) so TSSOP-8 O D [T it 'Source Pins 2, 3, 6 and 7 must be tied common


    OCR Scan     		PDF SI6465DQ Si6465DQ S-56943-- 02-Nov

    fds mosfet

    Abstract: No abstract text available
    Text: Tem ic SÌ6435DQ S em i co n d u c t or s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) r DS(on) ( ^ ) I d (A ) 30 0.040 @ V o s = -1 0 V 0.070 @ V o s = -4 .5 V ± 4 .5 ± 3 .4 s*o TSSOP-8 °n Top View *Source Pins 2, 3, 6 and 7 must be tied common.


    OCR Scan     		PDF 6435DQ S-49534--Rev. -Oct-97 06-Oct-97 fds mosfet

    Siliconix

    Abstract: S-54704 It83
    Text: SÌ6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET Vos (VJ Ros(on) i Q) ip (A) 0.014 @ Vqs = 4.5 V ±7.8 0.021 @ Vqs = 2-5 V ±6.3 e < f> " A 20 D O TSSOP-8 • UE * Source Pins 2, 3, 6 and 7 must be tied common. Top View Ô S' N-Channel MOSFET wtmmmm


    OCR Scan     		PDF 6466DQ PAR704-- 13-Oct-97 Si6466DQ S-54704-- Siliconix S-54704 It83

    STK772B

    Abstract: 3032B LA5601 LA5009M
    Text: Continuée from previous page Package Device Type Number of Drawing pins and number configuration Description Feature* : • LA5005M MFP 8 3032B 5 V low-saturation voltage regulator Miniflat package version o1 the LA5005 LA5006M MFP 8 3032B 6 V low-saturation voltage regulator


    OCR Scan     		PDF LA5005M LA5006M 3032B 3032B LA5005 STK733C STK740B' STK740C STK743B STK772B STK772B LA5601 LA5009M

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF360 MIL-S-19500 di/dt-100A/ 300cS. 03b0fc

    Untitled

    Abstract: No abstract text available
    Text: Tem ic siiiconix_SÌ6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VD S V rDS(on) ( ß ) I d (A) 0.045 @ V q s = 10 V ± 4 .4 0.070 @ V GS = 4.5 V ± 3 .5 30 D O TSSOP-8 'S o u rc e Pins 2, 3, 6 a n d 7 m ust be tied com m on.


    OCR Scan     		PDF 6436DQ S-42910--

    Si6435DQ siliconix

    Abstract: No abstract text available
    Text: Temic siiiconix_SÌ6435DQ P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) ( ß ) 30 I d (A) 0.040 @ Vc,s = - 1 0 V ±4.5 0.070 @ VGS = -4 .5 V ±3.4 T S S O P -8 D [T s d j ] • SÍ643SDQ S [T G d D *Source Pins 2, 3, 6 a n d 7


    OCR Scan     		PDF 6435DQ 643SDQ S-41471-- Si6435DQ siliconix