Untitled
Abstract: No abstract text available
Text: Surface Mount Directional Couplers 75Ω DBTC-20-4-75+ DBTC-20-4-75L+ 5 to 1250 MHz Maximum Ratings Features Operating Temperature • • • • • • • -40°C to 85°C Storage Temperature -55°C to 100°C Pin Connections INPUT 3 OUTPUT 4 COUPLED 1 GROUND
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DBTC-20-4-75+
DBTC-20-4-75L+
AT790-1
AT1030
2002/95/EC)
PL-151)
DBTC-20-4-75
M98898
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NPTB00004
Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for
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NPTB00004
PO150S
NPT25015
NPT35015
NPT1012
2xNPT25100
NPTB00004
NPT25015
NPT1012
NPT1004
NPTB00025
NPT1010
NPTB00050
AC200B
NPT1007
NPT25100
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ELXY
Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz
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NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
ELXY
npt1010b
18121C105KAT2A
ATC100B101J
6010LM
91292A012
ATC100B150J
12061C103KAT2A
NITRON
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Untitled
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
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Untitled
Abstract: No abstract text available
Text: 0 to 70 dB Rotary Step Attenuator, BNC Female To BNC Female With 10 dB Step Rated To 1 Watt Up To 2 GHz TECHNICAL DATA SHEET PE7034-4 Configuration Design Connector 1 Connector 2 Body Material and Plating Step, Bidirectional Attenuator BNC Female BNC Female
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PE7034-4
e-bnc-female-1-watt-attenuator-pe7034-4-p
PE7034-4
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NPT1007
Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
Text: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature
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NPT1007
1200MHz
900MHz
500-1000MHz
AD-014
EAR99
1400mA1,
900MHz,
NDS-012
2305 transistor
transistor A114
NPT1007B
200W PUSH-PULL
1000v 200w Transistor
c101 TRANSISTOR
transistor C101
transistor equivalent table c101
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REC70
Abstract: chipcon T159-1 CFR47 frequency hopping spread spectrum 900 REC7003E marking 2nw REC-70 an-001
Text: Application Note AN001 AN001 SRD regulations for licence free transceiver operation By P. M. Evjen Keywords • • • • • CEPT recommendations • ETSI standards • R&TTE directive Part 15 devices Type approval Equipment testing Operating frequency below 1GHz
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AN001
SWRA090
REC70
chipcon
T159-1
CFR47
frequency hopping spread spectrum 900
REC7003E
marking 2nw
REC-70
an-001
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NPTB00025
Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
NPTB00025B
AC200BM-F2
AC200B
JESD22-A114
JESD22-A115
UPW1C151MED
ATC600F1R2AT
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NPT25100
Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader
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NPTB00004
PO150S
99GHz
17GHz
-35dBc
NPT25015
NPT25100
800-1000MHz
NPT25100
NPTB00004
NPT25015
NPTB00025
NPT1007
NPTB00050
NPT1004
NPT1005
NPT35015
AC360P
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Untitled
Abstract: No abstract text available
Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in
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NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
NDS-023
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ZDC-10-2
Abstract: No abstract text available
Text: Non-Catalog Model Directional Coupler ZDC-10-2 Important Note This is a non-catalog model and can be manufactured on specific request. Pricing and delivery information can be supplied upon request. Please click "Back", and then click "Contact Us" for Applications support.
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ZDC-10-2
500-1000MHz
ZDC-10-2
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LF2805A
Abstract: J286
Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2805A
500-1000MHz,
LF2805A
J286
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Untitled
Abstract: No abstract text available
Text: LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2802A
500-1000MHz,
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TB207
Abstract: UT85 coax LB401 NJM78L08A UT85-15 UT85-50 120PF
Text: 15 30 45 60 75 90 105 30 60 90 120 1 1 2 2 4 P in in W a tts 5 6 7 8 3 4 5 6 P in in W a tts Efficiency @ 65W= 31% 7 TB207 LB401 Freq=750MHz Vds=28Vdc Idq=1.6A 3 Efficiency @ 65W = 43% Linear @12W P1dB=65W 8 TB207 LB401 Freq=500MHz Vds=28Vdc Idq=1.6A 9 9 10
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TB207
LB401
750MHz
28Vdc
500MHz
UT85 coax
NJM78L08A
UT85-15
UT85-50
120PF
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433mhz 500mw
Abstract: AN1772 APP1772 260-470MHz 640nW
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: short range devices, SRD, FCC Part 15, ETSI EN 300-220 Oct 21, 2002 APPLICATION NOTE 1772 Where to Go for Regulations Concerning Short-Range Devices SRD Abstract: Even though the use of short-range devices does not require a license, the products themselves are
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AS-4268
com/an1772
AN1772,
APP1772,
Appnote1772,
433mhz 500mw
AN1772
APP1772
260-470MHz
640nW
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NPTB00004
Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.
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NPTB00004
PO150S
NPT25015
NPTB00004
NPT1012
NPT25015
GaN amplifier 100W
Gan on silicon transistor
NPTB00025
NPT1007
GaN amplifier
NPT1004
Gan on silicon substrate
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Untitled
Abstract: No abstract text available
Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in
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NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
NDS-023
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Untitled
Abstract: No abstract text available
Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
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MPZ1608D101B
Abstract: MMZ2012Y202B by tdk 1608B MPZ2012S331A MPZ1608S221A
Text: Conforming to RoHS Directive Low-Rdc And High-Impedance Multilayer Chip Beads For Signal Lines, MMZ series 0402 type Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and
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2002/95/EC,
MZA2010S121C
MZA2010S241C
MZA2010S601C
MZA2010S102C
MZA2010Y800C
MZA2010Y121C
MZA2010Y241C
MZA2010Y601C
MZA2010Y102C
MPZ1608D101B
MMZ2012Y202B by tdk
1608B
MPZ2012S331A
MPZ1608S221A
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DBTC-10-4-75L
Abstract: DBTC-13-5-75L DBTC-18-4-75L
Text: DIRECTIONAL COUPLERS Designer's Kit K4-DBTC-75L+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! 5 to1500MHz DBTC-75L+ Features Very broadband, multi-octave, 75Ω Very flat 9,10,12,13,16 and 18dB coupling • Temperature stable LTCC base • All welded construction
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K4-DBTC-75L+
to1500MHz
DBTC-75L+
DBTC-18-4-75L+
5-50MHz,
50-500MHz,
500-1000MHz,
DBTC-13-5-75L+
DBTC-16-5-75L+
DBTC-10-4-75L
DBTC-13-5-75L
DBTC-18-4-75L
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S0239
Abstract: CX-210N CX-210A AF 239 RADIO COMPONENTE n71l dk50 nb71 codigo componente
Text: Issued / Herausgegeben / Publicado / Publication Publicatto / Udgivet / Afgegeven / Utgiven V10973 02/2004 50 OHM RF Coaxial Switches Koaxiale 50-Ohm-Hochfrequenzschalter Instruction Leaflet Bedienungsanleitung Hojas de instrucciones Feuille d’instructions
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V10973
50-Ohm-Hochfrequenzschalter
CX-210A
CX-210N
S0239)
S0239
CX-210N
CX-210A
AF 239
RADIO COMPONENTE
n71l
dk50
nb71
codigo componente
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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high frequency mixer
Abstract: I860 MXB-1002-3
Text: ♦♦♦♦♦ w PREMIER DEVICES MXB-1002-3 Surface Mount Mixer F eatu res • Wideband:Frequency Range 500-1000MHz • Low conversion loss 7dB typical • LO drive:+3dBm • Industry standard surface mount package: S07 • Low cost Description Absolute Maximum Ratings
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OCR Scan
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MXB-1002-3
500-1000MHz
MXB-1002-3
500-1000MHz
DC-1000MHz
30MHz/Temp.
13dBm
CA95131
-28ltf4Ã
high frequency mixer
I860
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10-017
Abstract: No abstract text available
Text: ♦♦♦♦♦ w PREMIER DEVICES MXB-1001-7 Surface Mount Mixer F eatu res MXB1001-7 - 020103 S& V , • Frequency Range 500-1000MHz • Low conversion loss 7dB typical • LO drive:+7dBm • Industry standard surface mount package: S07 • Low cost Description
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XB-1001-7
500-1000MHz
MXB-1001
500-1000MHz
DC-1000MHz
30MHz/Temp.
13dBm
CA95131
10-017
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