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    UPW1C151MED Price and Stock

    Nichicon Corporation UPW1C151MED

    CAP ALUM 150UF 20% 16V RADIAL TH
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    DigiKey UPW1C151MED Bulk 630 1
    • 1 $0.45
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    • 100 $0.1712
    • 1000 $0.13268
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    Newark UPW1C151MED Bulk 4,000
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    • 10000 $0.09
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    RS UPW1C151MED Bulk 10
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    • 10 $0.201
    • 100 $0.191
    • 1000 $0.171
    • 10000 $0.171
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    Quest Components UPW1C151MED 1,176
    • 1 $0.2499
    • 10 $0.2499
    • 100 $0.1666
    • 1000 $0.1333
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    TTI UPW1C151MED Bulk 1,400 100
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    • 100 $0.106
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    Avnet Abacus UPW1C151MED 143 Weeks 4,000
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    Nichicon Corporation UPW1C151MED1TA

    CAP ALUM 150UF 20% 16V RADIAL TH
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    DigiKey UPW1C151MED1TA Ammo Pack
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    Nichicon Corporation UPW1C151MED1TD

    CAP ALUM 150UF 20% 16V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPW1C151MED1TD Cut Tape 1
    • 1 $0.45
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    UPW1C151MED1TD Ammo Pack
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    Newark UPW1C151MED1TD Ammo Pack 2,000
    • 1 $0.468
    • 10 $0.468
    • 100 $0.468
    • 1000 $0.468
    • 10000 $0.468
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    Avnet Abacus UPW1C151MED1TD 143 Weeks 2,000
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    UPW1C151MED Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPW1C151MED Nichicon Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 150uF; Voltage: 16V; Case Size: 6.3x11 mm; Packaging: Bulk Original PDF
    UPW1C151MED1TA Nichicon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 150UF 20% 16V RADIAL Original PDF
    UPW1C151MED1TD Nichicon Aluminum Capacitors, Capacitors, CAP ALUM 150UF 16V 20% RADIAL Original PDF

    UPW1C151MED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELXY

    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package


    Original     		PDF NPT1015 NPT1015 NDS-035

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package


    Original     		PDF NPT1015 NPT1015 NDS-035

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    NPT25100

    Abstract: PIMD3
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		PDF NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT

    Untitled

    Abstract: No abstract text available
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004

    NPT25015DT

    Abstract: NPT25015DR
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    GRM188R72A104KA35D

    Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
    Text: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of


    Original     		PDF AD-001 AD-001: NPTB00025 17GHz AD-001 35dBc. 17GHz 250mA. GRM188R72A104KA35D GaN Bias 25 watt 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019

    ATC100B101JW500X

    Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S
    Text: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected


    Original     		PDF AD-014 AD-014: NPT1007 AD-014 1000MHz 700mA. APB08-132 ATC100B101JW500X CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B DTA183 RES2512 ELXY630ELL271MK25S

    NPTB00050

    Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
    Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from


    Original     		PDF NPTB00050 4000MHz 500-1000MHz EAR99 450mA, 3000MHz, NDS-007 NPTB00050B Gan on silicon substrate ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    NPTB00050B

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B