Untitled
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
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PDF
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NPTB00025
Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
NPTB00025B
AC200BM-F2
AC200B
JESD22-A114
JESD22-A115
UPW1C151MED
ATC600F1R2AT
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PDF
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Untitled
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Handling Precautions n Packging Specifications l Small in size and wide capacitance range l High humidity characteristic and long life
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DC100V
ECJ4YB2A224@
ECJ4YB2A474@
ECJ4YB2A684@
ECJ5YB2A105M
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PDF
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IRF7832
Abstract: IR2085S IRDC2085S-S PCC2224CT-ND bav16wdict zener db3 IRDC2085S-DF IRF7380 zener diode db2 IRF9956
Text: IRDC2085S-S DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC
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IRDC2085S-S
IRDC2085S-DF
IR2085S)
IRF7493)
IRF7832)
IRF7380)
IRF9956)
100mOhm
73mOhm
IRF7832
IR2085S
PCC2224CT-ND
bav16wdict
zener db3
IRF7380
zener diode db2
IRF9956
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PDF
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NPT25100
Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power
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NPT25100
2700MHz
10MHz
EAR99
NDS-001
NPT25100B
Gan on silicon substrate
Gan on silicon transistor
NPT25015
ECJ5YB2A105M
atc600f
ATC100B1R2BT
AC780BM-F2
GaN TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ • Features ■ Recommended Applications ● Small size and wide capacitance range ● High humidity characteristic and long life ● Low inductance (ESL) and excellent frequency
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DC100V
ECJ5YB2A105M
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PDF
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PIMD3
Abstract: No abstract text available
Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power
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Original
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NPT25100
2700MHz
10MHz
3A982
NDS-001
PIMD3
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PDF
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NPT25100
Abstract: PIMD3
Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power
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Original
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NPT25100
2700MHz
10MHz
3A982
NDS-001
NPT25100
PIMD3
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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NPT35015
EAR99
NDS-005
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PDF
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Untitled
Abstract: No abstract text available
Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
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PDF
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IR2086S
Abstract: BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380
Text: IRDC2086S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2086S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated full-bridge DC-DC
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IRDC2086S-DF
IR2086S)
IRF7493)
IRF6603)
IRF7380)
IRF9956)
IR2086S
PQ20/16-3F3
IR2086S
BAV16WDICT
"FULL-BRIDGE DC BUS CONVERTER"
rectifier schematic
zener db3
GRM188R61C105KA93D
t2a sot23
IR2086
bridge rectifier 2A
IRF7380
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PDF
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NPT25015
Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
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NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
NPT25015D
JESD22-A114
JESD22-A115
APP-NPT25015-25
NPT25015DT
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PDF
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NPT35015
Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power
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NPT35015
6000MHz
EAR99
NDS-005
NPT35015D
r04350
12061C103KAT2A
JESD22-A114
JESD22-A115
j146
NPT35015DT
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PDF
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Untitled
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Precaution for Handling n Packging method l Small in size and wide capacitance range l Superior humidity characteristic and long life thanks
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Original
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DC100V
ECJ4YB2A224@
ECJ4YB2A474@
ECJ4YB2A684@
ECJ5YB2A105M
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PDF
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NPT25015DT
Abstract: NPT25015DR
Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
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NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
NPT25015DT
NPT25015DR
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PDF
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ECJ1VC2A100D
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors 100V, 200V Series Multilayer Ceramic Capacitors (100V, 200V Series) Series: ECJ • Features ■ Recommended Applications ■ Handling Precautions ■ Packaging Specifications ● Small size and wide capacitance range ● High humidity resistance and long life
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ECJ5YB2A105M
ECJ1VC2A100D
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PDF
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Untitled
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Precaution for Handling n Packging method l Small in size and wide capacitance range l Superior humidity characteristic and long life thanks
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Original
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DC100V
ECJ5YB2A105M
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PDF
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NPTB00050
Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from
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NPTB00050
4000MHz
500-1000MHz
EAR99
450mA,
3000MHz,
NDS-007
NPTB00050B
Gan on silicon substrate
ELXY
ELXY630ELL271MK25S
12061C103KAT2A
nds 40
JESD22-A114
JESD22-A115
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PDF
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NPTB00050B
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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Original
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
NPTB00050B
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PDF
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Untitled
Abstract: No abstract text available
Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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Original
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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Original
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NPT35015
EAR99
NDS-005
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PDF
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IR2085S
Abstract: IRF7832 PCC2224CT-ND synchronous rectifier Zener Diode SOD323 IRDC2085S-DF IRF6603 IRF7380 IRF7493 IRF9956
Text: IRDC2085S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC
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Original
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IRDC2085S-DF
IR2085S)
IRF7493)
IRF6603)
IRF7380)
IRF9956)
100mOhm
73mOhm
IR2085S
IRF7832
PCC2224CT-ND
synchronous rectifier
Zener Diode SOD323
IRF6603
IRF7380
IRF7493
IRF9956
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PDF
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30Vn
Abstract: zener diode db2 CAP 22u 1210 digi-key PQ TRANSFORMER IR2085S irf7832 RG2 DIODE IR2085 PCC2224CT-ND
Text: IRDC2085S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC
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Original
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IRDC2085S-DF
IR2085S)
IRF7493)
IRF6618)
IRF7380)
IRF9956)
100mOhm
73mOhm
30Vn
zener diode db2
CAP 22u 1210
digi-key
PQ TRANSFORMER
IR2085S
irf7832
RG2 DIODE
IR2085
PCC2224CT-ND
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PDF
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ECJ3YB2A104
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Handling Precautions n Packging Specifications l Small in size and wide capacitance range l High humidity characteristic and long life
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Original
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DC100V
ECJ4YB2A224@
ECJ4YB2A474@
ECJ4YB2A684@
ECJ5YB2A105M
ECJ3YB2A104
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PDF
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