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    NPT25100B Search Results

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    NPT25100B Price and Stock

    MACOM NPT25100B

    Trans RF MOSFET N-CH 100V 3-Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical NPT25100B 1 1
    • 1 $334.05
    • 10 $334.05
    • 100 $334.05
    • 1000 $334.05
    • 10000 $334.05
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    Richardson RFPD NPT25100B 1
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    NPT25100B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 PDF

    NPT25100

    Abstract: PIMD3
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3 PDF