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    500V RELAY Search Results

    500V RELAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD507R/B Rochester Electronics LLC UHD507 - Quad NAND Power/Relay Driver Visit Rochester Electronics LLC Buy
    UHD432R/B Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503 - Quad OR Power/Relay Driver - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy
    UHD508R/883C Rochester Electronics LLC UHD508 - Quad 2-Input NAND Power/Relay Driver. Dual marked (8550001CA) Visit Rochester Electronics LLC Buy
    UHD432/883 Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver, CDIP14 - Dual marked (5962-8960401CA) Visit Rochester Electronics LLC Buy
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    500V RELAY Price and Stock

    Altech Corporation MC-330A-500V

    Altech MC-330A-500V Contors, 3 Pole, Frame Size 400AF AC/DC Common Coil, 440-575V, MC Series
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MC-330A-500V
    • 1 $889.08
    • 10 $853.52
    • 100 $853.52
    • 1000 $853.52
    • 10000 $853.52
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    Altech Corporation MC-400A-500V

    Altech MC-400A-500V Contors, 3 Pole, Frame Size 400AF AC/DC Common Coil, 440-575V, MC Series
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    Onlinecomponents.com MC-400A-500V
    • 1 $1025.8
    • 10 $984.77
    • 100 $984.77
    • 1000 $984.77
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    Altech Corporation MC-630A-500V

    Altech MC-630A-500V Contors, 3 Pole, Frame Size 800AF AC/DC, Common Coil, 440-575V, MC Series
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    Onlinecomponents.com MC-630A-500V
    • 1 $2132.26
    • 10 $2021.49
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    Altech Corporation MC-225A-500V

    Altech MC-225A-500V Contors, 3 Pole, Frame Size 150AF/225AF AC/DC Common Coil, 440-575V, MC Series
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MC-225A-500V
    • 1 $616.45
    • 10 $590.57
    • 100 $590.57
    • 1000 $590.57
    • 10000 $590.57
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    Altech Corporation MC-185A-500V

    Altech MC-185A-500V Contors, 3 Pole, Frame Size 150AF/225AF AC/DC Common Coil, 440-575V, MC Series
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MC-185A-500V
    • 1 $508.59
    • 10 $487.24
    • 100 $487.24
    • 1000 $487.24
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    Find more 500V RELAY price and stock on Findchips.com

    500V RELAY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FSS430

    Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70


    Original     		JANSR2N7402 FSS430R4 R2N74 FSS430 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112 PDF

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


    Original     		IRF820 IRF82 O220AB IRF820 irf-82 PDF

    RFM10N50

    Abstract: AN7254 AN7260 RFM10N45 TA17435
    Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,


    Original     		RFM10 O204AA) RFM10N45, RFM10N50 AN7254 AN7260. RFM10N50 AN7260 RFM10N45 TA17435 PDF

    TA17425

    Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
    Text: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,


    Original     		O204AA, O220AB) RFM6N45, RFP6N45, RFP6N50 AN7254 AN7260 TA17425 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		JANSR2N7398 FSL430R4 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		JANSR2N7402 FSS430R4 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 9A, 500V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		FSF450D, FSF450R PDF

    2E12

    Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		FSL430D, FSL430R 2E12 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3 PDF

    TA17435

    Abstract: RFM10n50 AN7254 AN7260 RFM10N45
    Text: RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 O hm , N-Channel Power M O SFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFM10N45, RFM10N50 RFM10N45 T0-204AA RFM10N45 RFM10N50 TA17435. 50BVnSS AN7254 TA17435 AN7260 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		FSL430D, FSL430R PDF

    10VJ

    Abstract: IRFP450 TA17435 TB334
    Text: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		IRFP450 TA17435. IRFP450 O-247 10VJ TA17435 TB334 PDF

    NI-26

    Abstract: Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
    Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		FSS430D, FSS430R NI-26 Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3 PDF

    43721

    Abstract: No abstract text available
    Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSL430R4 JANSR2N7398 MIL-STD-750, MIL-S-19500, 500ms; 43721 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • 9A, 500V, Tqs ^o N = 0.600£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSF450D, FSF450R 36MeV/mg/cm2 MIL-S-19500 PDF

    IRFF420

    Abstract: TB334 MOSFET 400V 16A
    Text: IRFF420 Data Sheet March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET • 1.6A, 500V Formerly developmental type TA17405. Ordering Information PACKAGE 1891.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRFF420 TA17405. IRFF420 TB334 MOSFET 400V 16A PDF

    datasheet irfp460 mosfet

    Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
    Text: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP460 TA17465. datasheet irfp460 mosfet IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit PDF

    irfp460 dc motor circuit

    Abstract: IRFP460 TB334
    Text: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		IRFP460 TB334 O-247 irfp460 dc motor circuit IRFP460 TB334 PDF

    datasheet irfp450 mosfet

    Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
    Text: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		IRFP450 TB334 O-247 datasheet irfp450 mosfet rectifier d 355 n 2000 IRFP450 TA17435 TB334 PDF

    TA17425

    Abstract: IRF440 TB334
    Text: IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS ON = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


    Original     		IRF440 O-204AE TB334 TA17425. TA17425 IRF440 TB334 PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254 PDF

    application IRFP450

    Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
    Text: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP450 TA17435. application IRFP450 datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45 PDF

    diode 10a 400v

    Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
    Text: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance


    Original     		HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. diode 10a 400v 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1 PDF

    IRFF430

    Abstract: TA17415 TB334
    Text: IRFF430 Data Sheet January 2002 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.75A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFF430 TA17415. IRFF430 TA17415 TB334 PDF

    IRFF420

    Abstract: TB334
    Text: IRFF420 Data Sheet January 2002 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features • 1.6A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFF420 TA17405. IRFF420 TB334 PDF