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    IRF82 Price and Stock

    Rochester Electronics LLC IRF822

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF822 Bulk 20,598 650
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    • 1000 $0.46
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    Vishay Siliconix IRF820APBF

    MOSFET N-CH 500V 2.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF820APBF Tube 4,254 1
    • 1 $1.61
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    • 1000 $0.7
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    Rochester Electronics LLC IRF820

    2.5A, 500V, 3.000 OHM, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF820 Bulk 3,895 503
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    Rochester Electronics LLC IRF823

    N-CHANNEL POWER MOSFET
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    DigiKey IRF823 Bulk 2,284 683
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    Vishay Siliconix IRF820PBF

    MOSFET N-CH 500V 2.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF820PBF Tube 1,663 1
    • 1 $1.57
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    • 1000 $0.55932
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    RS IRF820PBF Bulk 1,000
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    Find more IRF82 price and stock on Findchips.com

    IRF82 Datasheets (187)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF82 STMicroelectronics Scan PDF
    IRF820 Bay Linear POWER MOSFET Original PDF
    IRF820 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF820 Intersil 2.5A, 500V, 3.000 ?, N-Channel Power MOSFET Original PDF
    IRF820 STMicroelectronics N-channel 500V - 2.5O - 4A - TO-220 PowerMESH II MOSFET Original PDF
    IRF820 STMicroelectronics N-CHANNEL 500V - 2.5 ? - 4A - TO-220 POWERMESH Original PDF
    IRF820 STMicroelectronics N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET Original PDF
    IRF820 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF820 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 2.5A TO-220AB Original PDF
    IRF820 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF820 Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 450 V/500 V Scan PDF
    IRF820 FCI POWER MOSFETs Scan PDF
    IRF820 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF820 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF820 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
    IRF820 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF820 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF820 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF820 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF820 International Rectifier HEXFET Power Mosfet Scan PDF
    ...

    IRF82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF820PBF

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		PDF IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF820PBF

    Untitled

    Abstract: No abstract text available
    Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF820S, SiHF820S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		PDF IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE

    Untitled

    Abstract: No abstract text available
    Text: PD - 94979 IRF820PbF • Lead-Free Document Number: 91059 02/03/04 www.vishay.com 1 IRF820PbF Document Number: 91059 www.vishay.com 2 IRF820PbF Document Number: 91059 www.vishay.com 3 IRF820PbF Document Number: 91059 www.vishay.com 4 IRF820PbF Document Number: 91059


    Original     		PDF IRF820PbF O-220AB 12-Mar-07

    SiHF820AL

    Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
    Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration


    Original     		PDF IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-263) O-262) 18-Jul-08 IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3

    IRF820AS

    Abstract: AN-994 IRF820A IRF820AL diode SS 16
    Text: PD- 93774A IRF820AS IRF820AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		PDF 3774A IRF820AS IRF820AL O-262 Di52-7105 IRF820AS AN-994 IRF820A IRF820AL diode SS 16

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


    Original     		PDF IRF820 IRF82 O220AB IRF820 irf-82

    Untitled

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		PDF IRF820, SiHF820 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF820A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRF820A O-220 IRF820A

    Untitled

    Abstract: No abstract text available
    Text: PD - 95548 IRF820SPbF • Lead-Free www.irf.com 1 7/22/04 IRF820SPbF 2 www.irf.com IRF820SPbF www.irf.com 3 IRF820SPbF 4 www.irf.com IRF820SPbF www.irf.com 5 IRF820SPbF 6 www.irf.com IRF820SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


    Original     		PDF IRF820SPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)


    Original     		PDF IRF820A, SiHF820A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF820ASPBF

    Abstract: No abstract text available
    Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-262) O-263) 12-Mar-07 IRF820ASPBF

    IRFS820B

    Abstract: IRF820B
    Text: IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF820B/IRFS820B IRFS820B IRF820B

    Untitled

    Abstract: No abstract text available
    Text: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)


    Original     		PDF IRF820S, SiHF820S IRF820L, SiHF820L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF820S

    Abstract: diode Rl 257
    Text: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRF820S IRF820S diode Rl 257

    IRF820

    Abstract: No abstract text available
    Text: IRF820 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 3 .0 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRF820 IRF820

    IRFB22

    Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
    Text: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRF820R, IRF821R, IRF822R, IRF823R 50V-500V IRF822FI IIRF823R sF822R, IRFB22 IRF820R IRF821R IRF822R IRF823R thermal impedance GI 312 diode

    Untitled

    Abstract: No abstract text available
    Text: IRF820A Advanced Power MOSFET FEATURES B ^D S S - 500 V ♦ Avalanche Rugged Technology r\D cn a ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 3 .0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRF820A

    IRF820

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF820/821 FEATURES TO-220 ' Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF820/821 O-220 IRF820 IRF821 IRF820

    N-Channel mosfet 400v 25A

    Abstract: IRF820S n-channel 250V power mosfet
    Text: IRF820S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .5 A lD = ♦ Improved Gate Charge 3 .0 Î2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRF820S N-Channel mosfet 400v 25A IRF820S n-channel 250V power mosfet

    IRF820

    Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF820 IRF821 IRF823 Gate-SourcF821, IRF823 IRF820 IRF820, P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET R 823 motorola IRF n CHANNEL MOSFET

    IRF820

    Abstract: IRF820.821 IRF822
    Text: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF820/821/822/823 IRF820 IRF821 IRF822 IRF823 IRF820.821

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


    OCR Scan     		PDF IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821

    1rf830

    Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
    Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFQ20/Q21/822/823 IRF820R/821R/822R/823R IRF820, RF821, 1RF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R 1rf830 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820