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    IRF821 Search Results

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    IRF821 Price and Stock

    Harris Semiconductor IRF821

    2.5A, 450V, 3.0 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF821 390 1
    • 1 $0.5556
    • 10 $0.5556
    • 100 $0.5223
    • 1000 $0.4723
    • 10000 $0.4723
    		Buy Now

    IRF821 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF821 Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 450 V/500 V Scan PDF
    IRF821 FCI POWER MOSFETs Scan PDF
    IRF821 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF821 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF821 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
    IRF821 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF821 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF821 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF821 Motorola European Master Selection Guide 1986 Scan PDF
    IRF821 Motorola N-CHANNEL Enhancement-Mode Silicon Gate TMOS Scan PDF
    IRF821 Motorola Switchmode Datasheet Scan PDF
    IRF821 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF821 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF821 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF821 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF821 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRF821 Unknown FET Data Book Scan PDF
    IRF821 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF821 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF821 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF

    IRF821 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF822

    Abstract: IRF820 IRF821 IRF823 TB334 IRF823 harris
    Text: IRF820, IRF821, IRF822, IRF823 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF820, IRF821, IRF822, IRF823 IRF822 IRF820 IRF821 IRF823 TB334 IRF823 harris PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    IRFB22

    Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
    Text: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E


    OCR Scan     		IRF820R, IRF821R, IRF822R, IRF823R 50V-500V IRF822FI IIRF823R sF822R, IRFB22 IRF820R IRF821R IRF822R IRF823R thermal impedance GI 312 diode PDF

    IRF820

    Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		IRF820 IRF821 IRF823 Gate-SourcF821, IRF823 IRF820 IRF820, P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET R 823 motorola IRF n CHANNEL MOSFET PDF

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


    OCR Scan     		IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821 PDF

    IRF 450 MOSFET

    Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
    Text: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high


    OCR Scan     		IRF820 IRF821 IRF823 221a-04 tq-220ab IRF821. IRF 450 MOSFET IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821 PDF

    IRF822

    Abstract: IRF820 IRF823 IRF821 Diode IRF820
    Text: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V


    OCR Scan     		IRF820, IRF821, IRF822, IRF823 50V-500V IRF822 IRF823 IRF820 IRF821 Diode IRF820 PDF

    irc820

    Abstract: irf transistors IRF 820 i821
    Text: SGS-THOMSON ¡L IOT iOûS IRF820/FI-821/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF820 IRF820FI V dss I 500 500 R DS(on Id 3 Q 3 a 3 A 2.2 A 3 1) 3 a 3 A 2.2 A 4 n 4 il 2 .8 A V V IRF821 IRF821FI 450 V 450 V IRF822 IRF822FI 500


    OCR Scan     		IRF820/FI-821/FI IRF822/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI O-220 ISOWATT220 irc820 irf transistors IRF 820 i821 PDF

    T1IG

    Abstract: IAF820 IRF822 1RF822 IRF820 IRF821 IRF823 t 319 sti 5510
    Text: Dl 3875081 G E SOLID 3Ö7SGÖ1 QQ1Ô374 b S T AT E 01E 18 374 - D T-3.9t 11 öianaara Kower M O SFET s IRF820, IRF821, IRF822, IRF823 File N um ber 1581 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode


    OCR Scan     		IRF820, IRF821, IRF822, IRF823 50V-500V IRF822 1RF823 T1IG IAF820 1RF822 IRF820 IRF821 IRF823 t 319 sti 5510 PDF

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
    Text: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi


    OCR Scan     		820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor irf transistors PDF

    IRF822

    Abstract: irf820
    Text: IRF820, IRF821, IRF822, IRF823 HARRIS S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2 A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF820, IRF821, IRF822, IRF823 TA17405. RF822, RF823 IRF822 irf820 PDF

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
    Text: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI


    OCR Scan     		820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f PDF

    irf820

    Abstract: No abstract text available
    Text: w vys S IRF820, IRF821, IRF822, IRF823 S e m ico n d ucto r y y 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF820, IRF821, IRF822, IRF823 ThIRF823 irf820 PDF

    P4N70

    Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00


    OCR Scan     		O-220 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 IRF822 IRF820 IRF832 P4N70 IRF840 irf830 ssp3n70a SSP4N70A SSP6N60 3N70 IRF842 PDF

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85 PDF

    DATA SHEET IRF331

    Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i


    OCR Scan     		IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D DATA SHEET IRF331 IRF540 IRF44 VN2410M IVN6200CNH PDF

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1 PDF

    1RF820

    Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


    OCR Scan     		O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 1RF820 VN64GA VN2410M IRF340 IRF350 IRF740 PDF

    N9301

    Abstract: beckman sp 101 TK84
    Text: r& TO K O TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ Workstations


    OCR Scan     		TK84819 IEC-555 ML4819 IC-112-TK84819 N9301 beckman sp 101 TK84 PDF

    IRF820

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF820/821 FEATURES TO-220 ' Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF820/821 O-220 IRF820 IRF821 IRF820 PDF

    d83-004k

    Abstract: D83-004 d83004 SPWM 555 B64290-K45 nam .22K 630V
    Text: Ju ly 1992 A D V A N C E IN FO R M A TIO N % M k r o L in e a r ML4819 Power Factor and PWM Controller "Combo" GENERAL DESCRIPTION T h e ML4819 is a co m p lete boost m od e P o w e r Factor C o n tro l P FC | w h ich also co n tain s a P W M con tro ller.


    OCR Scan     		ML4819 ML4819 L4S12 15AWG IRF840 2N2222 IRF821 1N414A F41206-TC B64290-K45-X27 d83-004k D83-004 d83004 SPWM 555 B64290-K45 nam .22K 630V PDF

    VN64GA

    Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90


    OCR Scan     		IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 PDF

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60 PDF

    sony 2sj54

    Abstract: IRF822 equivalent irf820 equivalent VN64GA 2SJ54 2SK173 VN0108N2 VN64GA equivalent 2sk173 IRF232 IRF522
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 T O -2 2 Q A B Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100


    OCR Scan     		O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 sony 2sj54 IRF822 equivalent irf820 equivalent VN64GA 2SJ54 2SK173 VN0108N2 VN64GA equivalent 2sk173 IRF232 PDF