Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRF832 Search Results

    SF Impression Pixel

    IRF832 Price and Stock

    Rochester Electronics LLC IRF8327STRPBF

    MOSFET N-CH 30V 14A/60A DIRECTFT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF8327STRPBF Bulk 467
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.64
    • 10000 $0.64
    		Buy Now

    Infineon Technologies AG IRF8327STRPBF

    MOSFET N-CH 30V 14A DIRECTFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF8327STRPBF Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas IRF8327STRPBF Reel 4,800 4,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Rochester Electronics IRF8327STRPBF 1,462 1
    • 1 $0.6185
    • 10 $0.6185
    • 100 $0.5814
    • 1000 $0.5257
    • 10000 $0.5257
    		Buy Now

    Infineon Technologies AG IRF8327STR1PBF

    MOSFET N-CH 30V 14A DIRECTFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF8327STR1PBF Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    STMicroelectronics IRF832

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF832 240
    • 1 $2.784
    • 10 $2.784
    • 100 $1.392
    • 1000 $1.2876
    • 10000 $1.2876
    		Buy Now

    International Rectifier IRF8327STRPBF

    IRF8327 - 12V-300V N-Channel Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF8327STRPBF 4,538 1
    • 1 $0.6185
    • 10 $0.6185
    • 100 $0.5814
    • 1000 $0.5257
    • 10000 $0.5257
    		Buy Now

    IRF832 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF832 Fairchild Semiconductor N-Channel Power MOSFETs, 4.5 A, 450V/500V Scan PDF
    IRF832 FCI POWER MOSFETs Scan PDF
    IRF832 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF832 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF832 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. Scan PDF
    IRF832 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF832 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF832 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF832 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF832 Motorola Switchmode Datasheet Scan PDF
    IRF832 Motorola European Master Selection Guide 1986 Scan PDF
    IRF832 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF832 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF832 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF832 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF832 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF832 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF832 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF832 Unknown FET Data Book Scan PDF
    IRF832 National Semiconductor N-Channel Power MOSFETs Scan PDF

    IRF832 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97669 IRF8327SPbF IRF8327STRPbF DirectFET Power MOSFET ‚ l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters


    Original     		IRF8327SPbF IRF8327STRPbF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF8327SPbF l l l l l l l l l l DirectFET Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V


    Original     		IRF8327SPbF PDF

    IRF8327S

    Abstract: No abstract text available
    Text: PD - 97669 IRF8327SPbF IRF8327STRPbF DirectFET Power MOSFET ‚ l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters


    Original     		IRF8327SPbF IRF8327STRPbF IRF8327S PDF

    IRF830

    Abstract: IRF8331 IRF831 IRF832 IRF833 harris IRF833 TA17415 TB334
    Text: IRF830, IRF831, IRF832, IRF833 S E M I C O N D U C T O R 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF830, IRF831, IRF832, IRF833 IRF830 IRF8331 IRF831 IRF832 IRF833 harris IRF833 TA17415 TB334 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    IRf 334

    Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
    Text: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi


    OCR Scan     		830/FI-831/FI 832/FI-833/FI IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 IRF833FI IRf 334 IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 PDF

    1rf830

    Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
    Text: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS


    OCR Scan     		1RF830 1RF831 IRF832 IRF833 IRFS30 IRF631 IRFS32 IRF833 LG diode 831 IRF830.831 PDF

    irp833

    Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
    Text: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 RF832 irp833 JRF830 IRF830 3203 MOSFET IRF831 RF832 mosfet jrf830 F832 PDF

    F832

    Abstract: IRF833 IRF832
    Text: IRF832,833 [F^ÿM ^KÆ © [FUT 4.0 AMPERES 500, 450 VOLTS RDS ON = 2.0 n RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF832 F832 IRF833 PDF

    IRF830R

    Abstract: diod 200 ampere 600 volt IRF831R IRF832R IRF833R IRF83Q
    Text: _Rugged Power MOSFETs File Number 2021 IRF830R, IRF831R, IRF832R, IRF833R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4.5A, 450V-500V rDs on = 1,5Q and 2.00 N -C H A N N E L E N H A N C E M E N T M O D E D Features: • Single pulse avalanche energy rated


    OCR Scan     		IRF830R, IRF831R, IRF832R, IRF833R 50V-500V IRF832R IRF833R F830R IRF830R diod 200 ampere 600 volt IRF831R IRF83Q PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF830, IRF831, IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF830, IRF831, IRF832, IRF833 PDF

    P4N70

    Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00


    OCR Scan     		O-220 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 IRF822 IRF820 IRF832 P4N70 IRF840 irf830 ssp3n70a SSP4N70A SSP6N60 3N70 IRF842 PDF

    IRF830

    Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		IRF830 IRF831 IRF832 IRF833 IRF831. IRF 450 MOSFET LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830 PDF

    BF 331 TRANSISTORS

    Abstract: ibf830 SD 336 IRf 334 MOS 3020 application note using irf 830 rf830 BF 830 transistor transistor maw CJ135
    Text: 30E D rzj S • 7^237 SCS-THOMSON G s^THÖMSoF TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 , IRF833FI QG2Sßl3 b ■ VDSS 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V N ^DS on 1.5 n 1.5 n 1.5 n 1.5 ß 2.0 Q 2.0 fl 2.0 Q 2.0 a - ( _


    OCR Scan     		830/FI-831/FI 832/FI-833/FI IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 IRF833FI BF 331 TRANSISTORS ibf830 SD 336 IRf 334 MOS 3020 application note using irf 830 rf830 BF 830 transistor transistor maw CJ135 PDF

    IRF833

    Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
    Text: 3875081 G E SOLID STATE 01 Standard Power M O S FE T s DE 1 3Û7SQÔ1 QDlfl37‘ì S I D - - IRF830, IRF831, IRF832, IRF833 File Number 1582 Power MOS Field-Effect Transistors N -CH A NN EL EN H A N C E M E N T M ODE


    OCR Scan     		lfl37c! T-39- IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 1RF831 30010 IRF830 IRF831 w sa 45a diode PDF

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


    OCR Scan     		34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431 PDF

    IRF9120

    Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
    Text: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150


    OCR Scan     		1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF9223 1RF9230 IRF9231 IRF9232 1RF9233 IRF9120 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 PDF

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85 PDF

    1RF820

    Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


    OCR Scan     		O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 1RF820 VN64GA VN2410M IRF340 IRF350 IRF740 PDF

    VN64GA

    Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90


    OCR Scan     		IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 PDF

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60 PDF

    pn junction DIODE 1N4001

    Abstract: VN64GA IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | I I I | ' r r r 's ' < O Ò ' ' ' lO ' I O O I I I P ' ' ' ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I j j CO 00 CO CO j I I I I OOOO


    OCR Scan     		IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D pn junction DIODE 1N4001 VN64GA IVN6200CNH IVN6200CNM PDF

    1RF820

    Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820
    Text: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220


    OCR Scan     		to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* 1RF820 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF820 PDF

    VN1000A

    Abstract: VN64GA IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


    OCR Scan     		IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D VN1000A VN64GA IVN6200CNH IVN6200CNM PDF