MTM6N60 Search Results

MTM6N60 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTM6N60		Motorola	Switchmode Datasheet		Scan	PDF
MTM6N60		Motorola	European Master Selection Guide 1986		Scan	PDF
MTM6N60		Motorola	N-channel enhancement-mode silicon gate TMOS. Power field effect transistor.		Scan	PDF
MTM6N60		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
MTM6N60		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
MTM6N60		Unknown	FET Data Book		Scan	PDF
MTM6N60		Semiconductor Technology	High Voltage MOS Power Field Effect Transistors		Scan	PDF

MTM6N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MTM6N60 Abstract: 40LS10 mosfet 600V 30A Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTM6N60 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	MTM6N60 O-204AA MTM6N60 40LS10 mosfet 600V 30A	PDF
Untitled Abstract: No abstract text available Text: du. itoi ^Products., Qna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTH6N55 MTH6N60 MTM6N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high	Original	MTH6N55 MTH6N60 MTM6N60 O-204) O-218)	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
MTH13N50 Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50 Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:	Original	MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50	PDF
motorola application note AN-569 Abstract: Motorola Transistor 3-252 Motorola 3-252 Text: motorola sc -c x s t r s / r f Tö > 6 3 6 7 2 5 4 MOTOROLA SC D E \| t,3 1=,7 S SM X STR S/R F OGflBBfiti 98D 8 3 3 8 6 fl D T ' 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTH6N55 MTH6N60 MTM6N60 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode	OCR Scan	MTH6N55 MTH6N60 MTM6N60 Elevated419 O-204AA O-218AC motorola application note AN-569 Motorola Transistor 3-252 Motorola 3-252	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
6n55 data Abstract: MTH6N60 6n55 MTH6N55 Text: MOTOROLA SC XSTRS/R F 14E D \| b3b?ES4 QQÖTÖHB 7 \| MOTOROLA 7 ^ 3 • SEMICONDUCTOR TECHNICAL DATA MTH6N55 MTH6N60 MTM6IM60 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high	OCR Scan	MTH6N55 MTH6N60 MTM6IM60 6n55 data 6n55	PDF
MTM6N60 Abstract: MTM6N85 MTM7N12 MTM7N20 MTM7N45 MTM8N08 MTM8N12 Text: - 283 f §Ü g tt Vds or % Vg s V Iq s s Pd Id Id s s Vg s (V) () (A) th) M 4# ft D s (on) Vd s = '14 ( T a = 2 5 iC ) Io(on) g fs Ciss Coss Crss VG S =0 Vg s /CH * /CH Vd g * (Ta= 25'C) ma x min CnA) Vg s (V) Vd s (V) Cm a) (V) (max) Id (mA) (V) ♦typ	OCR Scan	MTM6N60 O-204AA MTM6N85 M6N90 MTM7N12 MTM10 MTM7N20 MTM7N45 MTM8N08 MTM8N12	PDF
MTA2N60E Abstract: Motorola Transistor 3-252 MTM6N60 63386 MTH6N55 AN569 MTH6N60 Motorola Case 1-06 Motorola 3-252 Text: motorola sc -c x s t r s / r f > •=10 D E \| b3b72S4 0DÛ33ÛL, fl \| 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F 98D 6 3 3 8 6 T '3 MOTOROLA D q-13 SEMICONDUCTOR TECHNICAL DATA M TH6N55 M TH6N60 M TM 6N 60 Designer's Data Sheet Pow e r Field Effect T ran sisto r	OCR Scan	T-39W3 221D-02 MTA2N60E 31034T-0 MTA2N60E Motorola Transistor 3-252 MTM6N60 63386 MTH6N55 AN569 MTH6N60 Motorola Case 1-06 Motorola 3-252	PDF
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan		PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719	PDF
2N6912 Abstract: 1N45 2N6917 STM15N45 STM-320 2N6913 MTM15N40 MTM5N40 STM15N40/3 2N6760 Text: SEMIC OND UCTOR TECHNOLOGY OSE D I öl3t>4Sö 511 HIGH VOLTAGE M O S POWER FIELD EFFECT T R A N SIST O R S N-CHANNEL STI Type Industry Type Breakdown Voltage Continuous Current Draln-Source on Resistance TransConductance Gate Threshold Voltage to gts min @ID	OCR Scan	2N6759 2N6760 2N6761 2N6762 2N6767 2N6912 1N45 2N6917 STM15N45 STM-320 2N6913 MTM15N40 MTM5N40 STM15N40/3	PDF