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IXYS Corporation C-0010-375-501N21A RF MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C-0010-375-501N21A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation B82721K2501N21 Choke, Common Mode, 15 mH, 500 mA - Trays (Alt: B82721K2501N021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	B82721K2501N21	Tray		9 Weeks	720	1 - 10 - 100 - 1000 $1.74858 10000 $1.74858	Buy Now
Avnet Abacus	B82721K2501N21			8 Weeks	720	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation B82722J2501N21 Choke, Common Mode, 39 mH, 500 mA - Trays (Alt: B82722J2501N021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	B82722J2501N21	Tray		9 Weeks	540	1 - 10 - 100 - 1000 $1.94425 10000 $1.94425	Buy Now
Avnet Abacus	B82722J2501N21			8 Weeks	540	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation B82722A2501N21 Current-Compensated Ring Core Double Choke 39mH 0.5A 1120mOhm 30% Radial Leaded Tray - Trays (Alt: B82722A2501N021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	B82722A2501N21	Tray		9 Weeks	600	1 - 10 - 100 - 1000 $1.94425 10000 $1.94425	Buy Now
TDK Corporation B82721A2501N21 Choke, Common Mode, 15 mH, 500 mA - Trays (Alt: B82721A2501N021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	B82721A2501N21	Tray		9 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	B82721A2501N21			8 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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501N21 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
501N21		Directed Energy	DE-SERIES FAST POWER MOSFET		Original	PDF

501N21 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DE375-501N21A Abstract: "RF MOSFETs" 400P Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE375-501N21A 50MHz DE375-501N21A "RF MOSFETs" 400P	PDF
Directed Energy Abstract: 501N21 DE-375 Text: PRELIMINARY SPECIFICATIONS DE-375 501N21 21A, 500V, .25Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-375 501N21 150oC Directed Energy 501N21	PDF
400P Abstract: DE375-501N21A mosfet SPICE MODEL Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	DE375-501N21A 50MHz 400P DE375-501N21A mosfet SPICE MODEL	PDF
DE375-501N21A Abstract: 400P PIN diode SPICE model Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE375-501N21A 50MHz DE375-501N21A 400P PIN diode SPICE model	PDF
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02	PDF
mospower applications handbook Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101	OCR Scan	00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics	PDF
501N04 Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05 Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device	OCR Scan	DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05	PDF