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    506BC Search Results

    506BC Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL6506BCBZ-T Renesas Electronics Corporation Multiple Linear Power Controller with ACPI Control Interface Visit Renesas Electronics Corporation
    ISL6506BCBZ Renesas Electronics Corporation Multiple Linear Power Controller with ACPI Control Interface Visit Renesas Electronics Corporation
    ISL6506BCBZA Renesas Electronics Corporation Multiple Linear Power Controller with ACPI Control Interface Visit Renesas Electronics Corporation
    ISL6506BCBZA-T Renesas Electronics Corporation Multiple Linear Power Controller with ACPI Control Interface Visit Renesas Electronics Corporation
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    506BC Price and Stock

    Renesas Electronics Corporation ISL6506BCBZ

    IC PWR SUPPLY CTRLR/MONITR 8SOIC
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    DigiKey ISL6506BCBZ Tube 9,518 1
    • 1 $3.79
    • 10 $2.489
    • 100 $1.7697
    • 1000 $1.38026
    • 10000 $1.20397
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    Flip Electronics ISL6506BCBZ 2,921
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    Renesas Electronics America ISL6506BCBZ Tube 9,518 1
    • 1 $3.79
    • 10 $2.489
    • 100 $1.7697
    • 1000 $1.38026
    • 10000 $1.20397
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    Maxim Integrated Products MAX506BCWP-

    IC DAC 8BIT V-OUT 20SOIC
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    DigiKey MAX506BCWP- Tube 140 1
    • 1 $24.83
    • 10 $18.305
    • 100 $14.7662
    • 1000 $13.7375
    • 10000 $13.7375
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    Renesas Electronics Corporation ISL6506BCB

    IC CTRLR PWR MULT LIN 2A 8EPSOIC
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    DigiKey ISL6506BCB Tube
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    Maxim Integrated Products MAX506BCPP

    IC DAC 8BIT V-OUT 20DIP
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    DigiKey MAX506BCPP Tube 10,000
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    • 10000 $8.05
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    Bristol Electronics MAX506BCPP 107
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    Component Electronics, Inc MAX506BCPP 7
    • 1 $15.38
    • 10 $15.38
    • 100 $11.54
    • 1000 $10
    • 10000 $10
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    Maxim Integrated Products MAX506BCPP-

    IC DAC 8BIT V-OUT 20DIP
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    DigiKey MAX506BCPP- Tube 36
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    • 100 $20.24444
    • 1000 $20.24444
    • 10000 $20.24444
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    506BC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WDFN8

    Abstract: marking G3
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 3x3, 0.65P CASE 506BC−01 ISSUE A 8 1 DATE 28 MAY 2008 SCALE 2:1 A D L B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL


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    PDF 506BC-01 506BC WDFN8 marking G3

    NUS3116MT

    Abstract: No abstract text available
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


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    PDF NUS3116MT NUS3116MT/D NUS3116MT

    FCN950

    Abstract: x030f FCN-234J096-G/U T927 217S05 FCN-770A68 lm 3751 N630-2372-T010 panasonic inverter dv 707 manual FCN-268D024-G/10-R
    Text: To quickly find part number s , please use the Find Functions: 'Control F' or 'Shift Control F' Series CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS CN FCM PARTS 240CN-P 240CN-J


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    PDF 240CN-P 240CN-J C630-5294-X422 C630-5294-X427 C630-5294-X432 C630-5294-X436-DH FCN950 x030f FCN-234J096-G/U T927 217S05 FCN-770A68 lm 3751 N630-2372-T010 panasonic inverter dv 707 manual FCN-268D024-G/10-R

    NUS5531MT

    Abstract: No abstract text available
    Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and


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    PDF NUS5531MT NUS5531MT/D NUS5531MT

    Transistor BJT 547 b

    Abstract: 120E2 BJT 12 NUS5531MTR2G NUS5531MT
    Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and


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    PDF NUS5531MT NUS5531MT/D Transistor BJT 547 b 120E2 BJT 12 NUS5531MTR2G NUS5531MT

    IGBT 60A spice model

    Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
    Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


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    PDF September-2006 IGBT 60A spice model 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola

    AYWW marking code IC

    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original
    PDF NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547