WDFN8
Abstract: marking G3
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 3x3, 0.65P CASE 506BC−01 ISSUE A 8 1 DATE 28 MAY 2008 SCALE 2:1 A D L B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL
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506BC-01
506BC
WDFN8
marking G3
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 1.7x1.35, 0.4P CASE 511BF−01 ISSUE O 8 DATE 21 JUL 2010 1 SCALE 4:1 A B D PIN ONE REFERENCE 2X 0.10 C DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÏÏ ÏÏÏ ÎÎ ÏÏÏ ÏÏ ÎÎÎ EXPOSED Cu TOP VIEW A3
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511BF-01
511BF
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esd diode a2
Abstract: NUF4310MNTAG
Text: NUF4310MN Low Capacitance 4-Line EMI Filter with ESD Protection in WDFN8 Package This device is a 4 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 4.0 GHz. The NUF4310MN has a cut−off frequency of
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NUF4310MN
NUF4310MN
NUF4310MN/D
esd diode a2
NUF4310MNTAG
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Untitled
Abstract: No abstract text available
Text: NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant
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NTTFS4985NF
NTTFS4985NF/D
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Untitled
Abstract: No abstract text available
Text: UM475XX 300mA, Micropower, Dual Channel VLDO Linear Regulator UM475XX TSOT23-6 WDFN8 3.0x3.0 General Description The UM475XX series are dual channel VLDO very low dropout linear regulators designed for low power portable applications. The range of output voltage is from 1.2V to 5.0V while operated
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UM475XX
300mA,
TSOT23-6
UM475XX
200mV
100mA
300mA
Lane647
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511AQ−01 ISSUE A DATE 18 MAR 2010 1 SCALE 4:1 D PIN ONE REFERENCE 2X 0.10 C 2X A B DETAIL A E OPTIONAL CONSTRUCTIONS EXPOSED Cu A3 0.05 C MOLD CMPD DETAIL B A 8X DIM A A1 A3 b D E e L L1 ÉÉÉ
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511AQ-01
511AQ
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microdot
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511AT−01 ISSUE O DATE 26 FEB 2010 SCALE 4:1 D PIN ONE REFERENCE 2X 0.10 C 2X ALTERNATE TERMINAL CONSTRUCTIONS EXPOSED Cu e/2 MOLD CMPD DETAIL B A A1 A3 SIDE VIEW DIM A A1 A3 b D E e L L1 L2
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511AT-01
511AT
microdot
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microdot Application Note
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 1.6x1.0, 0.4P CASE 511AF−01 ISSUE O 8 DATE 19 AUG 2008 1 SCALE 4:1 A B D PIN ONE REFERENCE 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL
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511AF-01
511AF
microdot Application Note
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MO-240
Abstract: 3-3x 40MM 41MM 511AB
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 1 DATE 20 JAN 2009 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
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511AB-01
511AB
MO-240
3-3x
40MM
41MM
511AB
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33508
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33508 ACCEPTS IDS33508 REV A- 10-2011 SC-8, SC-70-8, US8 PARTIAL LISTING ON SEMI ULLGA8 1.9x1.0,0.5P, WDFN8 2x2,0.5P ANALOG LFCSP-WD CP-8-6 2x2 MM
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IDS33508
SC-70-8,
33508
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Untitled
Abstract: No abstract text available
Text: NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant
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NTTFS4985NF
NTTFS4985NF/D
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Untitled
Abstract: No abstract text available
Text: NTTFS4965NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant
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NTTFS4965NF
NTTFS4965NF/D
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511BE
Abstract: 511BE-01
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511BE−01 ISSUE O 1 DATE 21 JUL 2010 SCALE 2:1 A D PIN ONE REFERENCE 2X L B ÎÎÎ ÎÎÎ ÎÎÎ 0.10 C E DETAIL A ALTERNATE CONSTRUCTIONS TOP VIEW ÎÎ ÏÏ ÏÏ EXPOSED Cu A DETAIL B 0.10 C
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511BE-01
511BE
511BE
511BE-01
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511BH
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3x3, 0.65P CASE 511BH−01 ISSUE O 1 DATE 21 JUL 2010 SCALE 2:1 A D B L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN
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511BH-01
511BH
511BH
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NTTFS4824NTAG
Abstract: No abstract text available
Text: NTTFS4824N Power MOSFET 30 V, 69 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTTFS4824N
NTTFS4824N/D
NTTFS4824NTAG
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Untitled
Abstract: No abstract text available
Text: NTTFS4821N Power MOSFET 30 V, 57 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com
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NTTFS4821N
NTTFS4821N/D
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Untitled
Abstract: No abstract text available
Text: NCP1032 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for Telecom Systems The NCP1032 is a miniature high−voltage monolithic switching converter with on−chip power switch and startup circuits. It incorporates in a single IC all the active power control logic and
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NCP1032
511BH
NCP1032/D
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4C06
Abstract: No abstract text available
Text: NTTFS4C06N Power MOSFET 30 V, 67 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTTFS4C06N
NTTFS4C06N/D
4C06
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NTTFS4824N
Abstract: NTTFS4824NTAG NTTFS4824NTWG
Text: NTTFS4824N Power MOSFET 30 V, 69 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTTFS4824N
NTTFS4824N/D
NTTFS4824N
NTTFS4824NTAG
NTTFS4824NTWG
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NTTFS4932N
Abstract: NTTFS4932NTAG NTTFS4932NTWG
Text: NTTFS4932N Power MOSFET 30 V, 79 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTTFS4932N
NTTFS4932N/D
NTTFS4932N
NTTFS4932NTAG
NTTFS4932NTWG
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4823N
Abstract: NTTFS4823N NTTFS4823NTAG NTTFS4823NTWG
Text: NTTFS4823N Power MOSFET 30 V, 50 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com
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NTTFS4823N
NTTFS4823N/D
4823N
NTTFS4823N
NTTFS4823NTAG
NTTFS4823NTWG
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Untitled
Abstract: No abstract text available
Text: PCS3P8504A General Purpose Peak EMI Reduction IC Functional Description PCS3P8504A is a versatile, 3.3 V Timing-Safe Peak EMI reduction IC. PCS3P8504A accepts an input clock either from a fundamental Crystal or from an external reference AC or DC coupled
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PCS3P8504A
PCS3P8504A
PCS3P8504A/D
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Untitled
Abstract: No abstract text available
Text: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product
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NVTFS5820NL
NVTFS5820NLWF
NVTFS5820NL/D
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Untitled
Abstract: No abstract text available
Text: RT9012 Preliminary 300mA Dual LDO Regulator with POR General Description Features RT9012 is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA and power-on reset function. The range of output voltage is from 1.2V to 3.6V by operating from 2.5V to 5.5V input.
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RT9012
300mA
RT9012
240mV
300mA)
DS9012-00
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