Untitled
Abstract: No abstract text available
Text: R2005280L R2005280L Si Reverse Hybrid 5MHz to 200MHz Low Current Package: SOT-115J The R2005280L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited for 5MHz to
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R2005280L
200MHz
OT-115J
R2005280L
200MHz
140mA
24VDC
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Untitled
Abstract: No abstract text available
Text: R3005300L R3005300L 30dB Reverse Hybrid 5MHz to 300MHz Low Current Package: SOT-115J The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides
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R3005300L
300MHz
OT-115J
R3005300L
300MHz
160mA
24VDC
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R1005250L
Abstract: DIN45004B
Text: R1005250L R1005250L Low Current 5MHz to 100 MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R1005250L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R1005250L
OT-115J
R1005250L
100MHz
100MHz
140mA
24VDC
DIN45004B
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DIN45004B
Abstract: R3005300L
Text: R3005300L R3005300L Low Current 5MHz to 300MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R3005300L
300MHz
OT-115J
R3005300L
300MHz
160mA
24VDC
DIN45004B
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D10040230PH1
Abstract: No abstract text available
Text: D10040230PH1 D10040230P H1 451000MHz GaAs/GaN Pwr Dblr Hybrid 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description Features The D10040230PH1 is a Hybrid Power Doubler amplifier module. The part employs GaAS pHEMT die and GaN pHEMT die, has high output capability, and is operated from 45MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal
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D10040230PH1
D10040230P
451000MHz
45-1000MHz
OT-115J
D10040230PH1
45MHz
1000MHz.
Extreme23
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RF2316
Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
Text: TA0015 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data
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TA0015
RF2312/RF2317:
RF2316
TA0015
DIN4500B
RF2312
RF2317
HBT transistor s parameters measures
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DIN45004B
Abstract: R2005240P12 50dBmV
Text: R2005240P12 R2005240P1 2 5MHz to 200 MHz GaAs REVERSE HYBRID Package: SOT-115J Product Description Features The R2005240P12 is a hybrid reverse amplifier. The part employs a GaAs die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited
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R2005240P12
R2005240P1
OT-115J
R2005240P12
200MHz
200MHz
360mA
12VDC
DIN45004B
50dBmV
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cgr0118z
Abstract: 100C
Text: CGR-0118Z Dual CATV 5MHz to 120MHz CATV Amp IC CGR-0118Z Preliminary DUAL CATV 5MHz to 120MHz CATV AMP IC RFMD Green, RoHS Compliant, and Pb-Free Product Package: SOIC 8 Product Description Features RFMD’s CGR-0118Z is a high performance 75Ω push-pull GaAs HBT
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CGR-0118Z
120MHz
CGR-0118Z
XFM-0201-1WH
PS-103KLB
DS090120
cgr0118z
100C
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7856
Abstract: MC-7862 MC-7852 MC-7856 MC-7866 750-MHz
Text: GaAs CATV Hybrids 860MHz bandwidth, higher gain, Push-Pull Amplifiers and a significant improvement in CTB Part MC-7856 MC-7852 over silicon … plus assembly of these Bandwidth 50 – 860MHz 50 – 860MHz amplifiers is fully automated, so you're Gain 22dB @ 860MHz
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860MHz
MC-7856
MC-7852
860MHz
44dBmV/ch
7856
MC-7862
MC-7852
MC-7856
MC-7866
750-MHz
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Untitled
Abstract: No abstract text available
Text: D10040200PH1 D10040200PH1 GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz Package: SOT-115J The D10040200PH1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss
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D10040200PH1
45MHz
1000MHz
OT-115J
D10040200PH1
1000MHz.
450mA
24VDC
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Untitled
Abstract: No abstract text available
Text: RFPD2650 RFPD2650 GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz Package: SOT-115J The RFPD2650 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return
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RFPD2650
45MHz
1003MHz
OT-115J
RFPD2650
45MHz
1003MHz.
DS140303
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Untitled
Abstract: No abstract text available
Text: RFPD2670 RFPD2670 25dB Power Doubler Hybrid 40MHz to 1003MHz Package: SOT-115J The RFPD2670 is a hybrid power doubler amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die, has high output capability, and is operated from 40MHz to 1003MHz. It provides excellent linearity and
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RFPD2670
40MHz
1003MHz
OT-115J
RFPD2670
1003MHz.
440mA
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MC-7833
Abstract: MC-7831 MC-7831-HA MC-7832 MC-7834-KC MC-7845 MC-7846 MC-7847 MC-7847-KC MC-7881
Text: NEC CATV Hybrid Amplifiers Push-Pull Amplifiers VDD = 24V, ZS = ZL = 75 Ω www.cel.com Frequency (MHz, min – max) Gain (dB, min – max) CTB1 (dBc, max) MC-7831 50 – 870 18.0 – 19.0 -57 -57 -50 7.0 240 MC-7831-HA 40 – 1000 18.0 – 19.0 -57 -57
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MC-7831
MC-7832
MC-7833
MC-7834-KC
MC-7831-HA
MC-7894
50dBmV
52dBmV
MC-7833
MC-7831
MC-7831-HA
MC-7832
MC-7845
MC-7846
MC-7847
MC-7847-KC
MC-7881
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Philips FA 291
Abstract: Microwave PIN diode spice BFQ621 DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621
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BFQ621
OT172A2
Philips FA 291
Microwave PIN diode spice
BFQ621
DIN45004B
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Untitled
Abstract: No abstract text available
Text: R1005300L R1005300L Low Current 5-100MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R1005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R1005300L
5-100MHz
OT-115J
R1005300L
100MHz
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Untitled
Abstract: No abstract text available
Text: D8740240GT D8740240GT 40-870 MHz GaAs Power Doubler Hybrid 40-870MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D8740240GT is a Hybrid Power Doubler amplifier module. The part employs GaAS die and is operated from 40MHz to 870MHz. It provides
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D8740240GT
40-870MHz
OT-115J
D8740240GT
40MHz
870MHz.
870MHz
375mA
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Untitled
Abstract: No abstract text available
Text: D10040200PL1 D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description Features The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to
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D10040200PL1
D10040200P
451000MHz
45-1000MHz
OT-115J
D10040200PL1
45MHz
1000MHz.
DS091124
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Untitled
Abstract: No abstract text available
Text: RFPD2580 RFPD2580 45MHz to 1200MHz GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID Package: SOT-115J +VB Features ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability
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RFPD2580
45MHz
1200MHz
1200MHz
OT-115J
450mA
24VDC
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Untitled
Abstract: No abstract text available
Text: RFRP2920 RFRP2920 5MHz to 100MHz Si REVERSE HYBRID 5MHz to 100MHz Si REVERSE HYBRID LOW CURRENT Package: SOT-115J +VB Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise
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RFRP2920
100MHz
RFRP2920
OT-115J
160mA
24VDC
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Untitled
Abstract: No abstract text available
Text: D10040200PH1 D10040200P H1 451000MHz GaAs Power Doubler Hybrid 45-1000MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D10040200PH1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from
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D10040200P
451000MHz
D10040200PH1
45-1000MHz
OT-115J
D10040200PH1
45MHz
1000MHz.
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X6866D
Abstract: X6855M X6965M EPCOS SAW X6855M bjt differential amplifier X6964D x6966m EPCOS SAW X6966M X6857D
Text: RF3330 Preliminary 3 IF GAIN CONTROLLED AMPLIFIER Typical Applications • CATV Set-Top Boxes • Cable-Ready TVs • Cable Modems 3 0.15 0.05 1.59 1.61 0.365 TEXT* The RF3330 is a gain-controlled amplifier suitable for application in the IF receive section of a cable tuner. It
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RF3330
RF3330
X6866D
X6855M
X6965M
EPCOS SAW X6855M
bjt differential amplifier
X6964D
x6966m
EPCOS SAW X6966M
X6857D
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X6866D
Abstract: X6964D X6966M EPCOS SAW X6966M X6965M X6857D
Text: RF3330 Preliminary , *$,1 &21752// ' $03/,),(5 7\SLFDO $SSOLFDWLRQV • CATV Set-Top Boxes • Cable-Ready TVs 3 LINEAR CATV AMPLIFIERS • Cable Modems 3URGXFW 'HVFULSWLRQ 0.15 0.05 1.59 1.61 0.365 TEXT* The RF3330 is a gain-controlled amplifier suitable for
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RF3330
RF3330
50MHz
X6866D
X6964D
X6966M
EPCOS SAW X6966M
X6965M
X6857D
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SOT115
Abstract: No abstract text available
Text: RFMD. RFCM2680—The World’s First GaN-Based Surface Mount Power Doubler The RFMD RFCM2680 is a CATV power doubler amplifier in a multi-chip module. The part employs GaAs pHEMT die and GaN HEMT die. It provides an extremely high output level of 61dBmV with a 18dB tilt channel loading and is
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RFCM2680--The
RFCM2680
61dBmV
40MHz
1003MHz.
OT115
RFCM2680
50dBmV,
1003MHz
450mA
SOT115
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Untitled
Abstract: No abstract text available
Text: D10040200PL1 D10040200PL1 GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz Package: SOT-115J The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss
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D10040200PL1
45MHz
1000MHz
OT-115J
D10040200PL1
1000MHz.
380mA
24VDC
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