3fs 4a
Abstract: smd DIODE 3FS smd diode marking 3fs
Text: Schottky Barrier Diode Single Diode O U T L IN E w n n w D3FS4A U nit! mm P a c k a g e : 2F Weight 0.16g Typ •hy - K - 7 - y 4 0 V 2 .6 A / C arhode m ark Feature I m • Small SMD • Low Vf=0.45V • Prbsm Rating • /JvS yS M D • f f i V f = 0.45 V
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diode bridge 6a
Abstract: SHINDENGEN DIODE
Text: y Bridge Diode > ^ K > 7 - f > S Single In-line Package o u t l in e d im e n s i o n s U6SBA Case : 5S TO 600V 6A ill •UL§S3I UL File No.E 14 2 4 2 2 •fiiH Æ * SI i sm •s iftn a i& jE E i m is •S R « S OA, mm • a « , « ¡¡t. f a • m • Æ tè H
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U6SBA20
U6SBA60
50Hzil:
diode bridge 6a
SHINDENGEN DIODE
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d8lc40
Abstract: IL494 SHINDENGEN DIODE
Text: n - n z t f'ft - K v o m Saper Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 Case : ITO-220 400V 8A • e y -rx •trr5 0 n s •S R m:M • 7 U - m - f ib 9mm. OA. ?m s i s . FA • Æ tè ü rn RATINGS Absolute Maximum Ratings « n * matt fSft/W&liiE
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D8LC40
ITO-220
d8lc40
IL494
SHINDENGEN DIODE
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: tëS'fXy y y y Low Noise Bridge ? 'U y y f l t - F Bridge Diode_ Single In-line Package IM ttfeffl OUTLINE DIMENSIONS LN6SB 600V 6A •ß y -< x •S IP H v î r - V • S I FSM •S R *S • t v . mm • O A . a n . FA • Æ tè Ü RATINGS A b so lute M axim um Ratings
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50Hzil:
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: 7 3 7 N A IJ 7 $ 4 Tf- - K •yo m Twin Diode Schottky Barrier Diode • * t v b £ [2 ] OUTLINE DIMENSIONS S20SC4M 40V 20A • T j 15 0 t •P rrs m • e j c S V J '? U ffl i i • S R B ig •D C /D C *mn. ?-k. 0A#g§ RATINGS Absolute Maximum Ratings
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S20SC4M
Q00322b
Q0D3227
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Untitled
Abstract: No abstract text available
Text: fuT Nhon Inter Electronics Corporation 4A Avg. 40 V o lts X EA40Q C04 E A 40Q C 04-F SBD M A X IM U M R A T IN G S R a tin g 0 & L t: - X i« Vli )|. Repetitive Peak Reverse Voltage Jl- < 0 M L t XIl VE Ii: Non-repetitive Peak Reverse Voltage P.C.Iioard
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EA40Q
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ir1f
Abstract: SHINDENGEN DIODE
Text: n - n z # ' i t - K Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS SF8L60 600V 8A •B H Œ •trr7 0 n s 0 T L Î 7 b :E - JU K •Se«SBŒ2 KV SEŒ ffl Ì Ì •RFC • SRB 0 7 U - itW J b •TV+B. STO MÏÏtèm RATINGS Absolute Maximum Ratings
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SF8L60
50Hzil
ir1f
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: y a y h V Schottky Barrier Diode # — K - v fjiia D3S4M 4 0 V OUTLINE DIMENSIONS Case : 1.4 ^ 3 A 25 ±2 m 7 1<? ìt 2S=2 a f 4.4 -o t - • T j 1 5 0 ”C • P rrsm • 1.4 K Axial Diode -É 5 - 1* K U— K o - -W w&m ''C o lor code ffl m •S R B ü
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QQQ31Ã
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: mv&Tiu x Surface Mounting Device n - p K Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D2FL40 400V 1.3A • /J v ^ S M D • f iy 'f X •trr5 0 n s •S F Ä S • D C /D C □ •a«. • * « , OA. T O • « . FA ■Ë të S RATINGS • Î È if c l'I I ^ Ï Ë f ë
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D2FL40
50Hzil:
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: v a -y V J 7 & 4 * - K 7 Schottky Barrier Diode 1 Twin Diode OUTLINE DIMENSIONS D5SC4MR C ase : ITO -220 40V 5A • T jl5 0 t! • P rrsm 7 G V ' > i S i K • 7 J IÆ -J U K •S R S S •D C /D C D > K -^ • * Æ , V - h . OAtSÜ m •aa. • Æ fê g l
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Untitled
Abstract: No abstract text available
Text: V 3 7 v-OW K Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC4M U nit : mm Case : MTO-3P 5.0 =°3 40V 60A •T jl5 0 t; # P r r s m T ' / ^ V ì - ' i S bI 0.B5 ±a* 'M •S R *g •D C /D C □ v n - ÿ 9Wm, © © m S * - A . O Affiü • a s . iK-S ’ y im m
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S60SC4M
DD3234
DDD3235
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Untitled
Abstract: No abstract text available
Text: ¡ S U s lÊ x v W V 3 y 7. lounting Device Surt, c . Mounting K Schottky Barrier Diode Single Diode O U TLIN E D IM EN SIO N S DE10S3L 30 V 10A u n •S M D • T j 150°C •1ÊVf = 0.45 V •P rrs m T t K ^ y ' y x U I I • 'j« j* w a s g « •S R ®
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DE10S3L
50Hzil:
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D1NF60
Abstract: AX057 fly wheel
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NF60 ♦ 1 6 0 0 V 0 .8 A i la i Feature • r a M ± FRD • High Voltage Super FRD • ñS'íX • Low Noise • trr=400ns 02.6 * 2 • trr=400ns M Main Use « 1» ¡» S M B * 2 tt« 3 -K Spec Code
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D1NF60
400ns
AX057
50e0-52mm
J533-1
D1NF60
AX057
fly wheel
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S2L20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package : AX10 S2L20U Unit : mm W eight 0.65g Typ> 2 0 0 V 1.5A Feature 26.5 • Low Noise • tnr=35ns • s v -r x • trr=35ns (.1 • 7 5 'T /n - J b •iS te .F A (R 4 - 2 - * «•ríüíiidíiiiiM Marking
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S2L20U
CJ533-1
S2L20U
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j172
Abstract: D1NJ10 AX057
Text: Schottky Barrier Diode Axial Diode W D 1 N J 10 t m O U T L IN E Package : AX057 unit:mm W eight 0.19g Typ t— in o *1 100V 1A 3- Feature UJ • Tj=150°C • Tj=150°C * 2 • f i l R = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away (!>
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D1NJ10
AX057
waveli50Hz
j172
D1NJ10
AX057
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D20XB60
Abstract: SHINDENGEN DIODE
Text: 7' J y K V> 7 ^ 0 7 O S Bridge Diode Single In-line Package • M 2 v!-ä c 0 OUTLINE DIMENSIONS D20XB 600V 20A •HBJEE. Kl FSM • Ä fiftÄ H S » « « i* • S R « « • * « . OA •F A . - O A - Î ' RATINGS • > 8 ft ^ 3 ÊÎ& m Absolute Maximum Ratings
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D20XB
D20XB20
D20XB60
50Hzil.
D20XB60
SHINDENGEN DIODE
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S12S60SIC
Abstract: RW marking
Text: Schottky Barrier Diode Twin Diode • ¿m u OUTLINE S 12S 60S IC 6 0 0 V 1 2A Feature • Tj=175TC • Tj=175°C • TVF • TVF • IR = 4 0 0 y A • IR=400pA Main Use • Switching Regulator • H om e Appliance, Office Automation • S S • Communication
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175TC
400pA
S12S60SIC
S12S60SIC
RW marking
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Untitled
Abstract: No abstract text available
Text: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë
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SF10SC4R
150TC
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Untitled
Abstract: No abstract text available
Text: a n g x / w * taunting Device V O M Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS DF25SC6M Case : STO-220 6QV 25A 1 1 1 •SM D • T jl5 0 1 C • P rrsm T 'K ^ V ì - 'i S E •SR SS • D C / D C = l> K - £ •m m . y - A . o a h ì§ •M . RATINGS
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DF25SC6M
STO-220
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Untitled
Abstract: No abstract text available
Text: 5 Ü 8 È X /W :* y a 7 jnting Device Surface Moun.ing^Device K 7 Schottky Barrier Diode K S Diode Array OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 50TC •P rrs m % T \j - •SR B S •D C /D C Z iy iK - 9 •m m , y -A . oa«h •a«. Tti-^jutü
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SHINDENGEN DIODE
Abstract: SF10SC3L
Text: '> 3 h + A ' <J T # - f ^ — K 7 Schottky Barrier Diode 7 S Twin Diode OUTLINE DIMENSIONS SF10SC3L 30 V 10A •T j I 50C •<SV = 0 .45 V ♦ P rh s m y i X z ? y ' j T s u • ,« » » Œ 2 K V « li ffl i * •S R S S •D C /D C D > A '-5 ’ • * « . y - A . 0 A«g§
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SF10SC3L
SHINDENGEN DIODE
SF10SC3L
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DIODE s3l 400v
Abstract: DIODE s3l s3l 400v S3L40 SHINDENGEN DIODE
Text: Super F ast Recovery Diode Axial Oiode OUTLINE DIMENSIONS S3L40 Case : 1.4^ j 4.4 - ct 400V 3A H IM • e y -iX E CD o o 2 N •trr5 0 n s ''C o lo r code (Y ellow) ii-'tSEnBSMH •sRsæ Marking r S3L 07U-ft'(IU 9mm. O A. • a ia , m • Ë të fS _ u .,
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S3L40
07U-ft'
50Hzil:
DIODE s3l 400v
DIODE s3l
s3l 400v
S3L40
SHINDENGEN DIODE
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