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    IXGK50N60A2D1

    Abstract: No abstract text available
    Text: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


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    50N60A2D1 IC110 O-264 IF110 50N60B2D1 PLUS247 405B2 50N60A2D1 PDF

    50n60

    Abstract: 50N60A IF110 PLUS247
    Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original
    50N60A2D1 IC110 IF110 50N60B2D1 O-264 405B2 50N60A2D1 50n60 50N60A IF110 PLUS247 PDF

    50N60A

    Abstract: IF110 PLUS247 IXGX50N60A2U1
    Text: Advance Technical Information IGBT with Diode IXGK 50N60A2U1 VCES IXGX 50N60A2U1 IC25 VCE sat Low Saturation Voltage IGBT with Low Forward Drop Diode = 600 V = 75 A = 1.6 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


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    50N60A2U1 IC110 IF110 50N60A2D1 50N60A2U1 50N60A IF110 PLUS247 IXGX50N60A2U1 PDF