Untitled
Abstract: No abstract text available
Text: 800 Watts, 50V, 960-1215MHz DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES
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960-1215MHz
HVV0912-800
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1025
RFHA1025
DS130910
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capacitor 10uF/63V
Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0912-150
429-HVVi
EG-01-DS11B
capacitor 10uF/63V
capacitor 220uF/63V
J152
100 pf, ATC Chip Capacitor
pF CAPACITOR 100v
100b*500x
10uf 63v capacitor
capacitor 1206 63V
ID Innovations
resistor smd 1206 102
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uhf 150w mosfet
Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0912-150
121eliable.
EG-01-DS11A
or429-HVVi
uhf 150w mosfet
10uF CAPACITOR 1210 PACKAGE
capacitor 10uF/63V
smd transistor EK
10uf 63v capacitor
50V 1215MHZ
banana socket datasheet
capacitor 220uF/63V
diode gp 429
DS2346
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.
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ILD0912M400HV
ILD0912M400HV
960-1215MHz.
ILD0912M400HV-REV-NC-DS-REV-A
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7121
Abstract: MS2267 50V 1215MHZ
Text: MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2267 is a high power Class C NPN transistor
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MS2267
1215MHz
MS2267
1090MHz
7121
50V 1215MHZ
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MS2267
Abstract: TACAN
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
1090MHz
TACAN
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
1090MHz
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MS2267
Abstract: 50V 1215MHZ
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
50V 1215MHZ
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M600
IB0912M600
IB0912M600-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M150HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10µs,
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ILD0912M150HV
ILD0912M150HV
ILD0912M150HV-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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AM0912-080
Abstract: S042
Text: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz
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AM0912-080
AM0912-080
S042
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AM0912-080
Abstract: S042
Text: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz
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AM0912-080
AM0912-080
S042
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AM0912-080
Abstract: S042 13w 90 AM0912-08
Text: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz
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AM0912-080
AM0912-080
S042
13w 90
AM0912-08
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Untitled
Abstract: No abstract text available
Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle
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V0912-150
21DD1E)
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AM0912-300
Abstract: No abstract text available
Text: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN
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AM0912-300
AM0912-300
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AM0912-300
Abstract: TACAN transistor
Text: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN
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AM0912-300
AM0912-300
TACAN transistor
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AM0912-300
Abstract: 0912-300 so 960
Text: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN
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AM0912-300
AM0912-300
0912-300
so 960
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON A ; l , A M 0 9 1 2 -0 8 0 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS • R EFR AC TO R Y/G O LD M ETALLIZATIO N . EM ITTER SITE BALLASTED ■ LOW TH ER M AL R ESISTAN C E . IN PU T/O U TPU T M ATCHING ■ O VE R LA Y G EO M ETR Y
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AM0912-080
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Untitled
Abstract: No abstract text available
Text: SGS-1:ili ra©H gi H0MS0N AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • ■ ■ . ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE > P out = 90 W MIN. WITH 13 dB GAIN
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AM0912-080
AM0912-080
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TRANSISTOR 5DW
Abstract: No abstract text available
Text: SGS-THOMSON IU A M 0 9 1 2 -3 0 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAUCERAMIC HERMETIC PACKAGE
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AM0912-300
C125519
J1350G6F
r-4050
TRANSISTOR 5DW
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