MC2856
Abstract: No abstract text available
Text: -M O MOTOROLA MC2856 1 DSJOIO MC2856P 3 MOTOROU I .1 -,! VNF 5 MOTOROU MOTOROU 6 I G r — VCC=12V .J. I I P 14 13 MC2856P , ‘1111 I II 1111 I 11111 I I L– xl. X2. X3. 7 MOTOROM 5V MC2856M PD–TA 1 6- Rth j– h \ C =13t/w Rth(j–a)=130~/w \ \ j*:50X50Xlmm3
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MC2856
MC2856P
MC2856M
13t/w
50X50Xlmm3
Mc2a56P
MC2856
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PDF
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Untitled
Abstract: No abstract text available
Text: 17E R P H IL I P S E C G INC • bhSBTSfl 0004167 ECG1156 2 W att Audio Am plifier semiconductors I46* 3.7) 3.0 13 n i12 n i11r t10 i - 9i - —i fJ16 ii n15n 14 nn . rj.O-X3_p_ g 2,5 „■» 2.0 Ai 1.7W -L ru u u u u u u _ 21.4mW/,C: Al 1 (50X50Xlmm)—
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ECG1156
50X50Xlmm
bb5312ô
T-74-05-01
ECQ1186
bt531Sfl
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PDF
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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KTA1036
KTC2016.
220AB
300x300x2mm
200x200x2mm
100x100x1mm
50x50xlmm
KTA1036
KTC2016
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PDF
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KTB989
Abstract: KTD1352
Text: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage
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KTB989
KTD1352.
220AB
50x50x2mm
50x50xlmm
D50x50xlmm
KTB989
KTD1352
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PDF
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transistor D526
Abstract: D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER
Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2S D526 High Power Dissipation : Pq = 30W T c = 25°C Good Linearity of hpE. Complementary to 2SB596. Recommend for 2Q~25W High Fidelity Audio Frequency
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2SD526
2SB596.
O-220AB
50x50x2mm
50X50Xlmm
961001EAA2'
transistor D526
D526
d526 y
D526 transistor
d526 - y
2SD526
toshiba D526
30W AUDIO AMPLIFIER
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PDF
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2SD880
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : b p E = 3 0 0 M a x . (VCE=5V, IC=0.5A) 10.3M A X ¡z ¡5 6 ± 0 .a . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A)
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2SD880
2SB834.
50X50xlmmA^
2SD880
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1S1330
Abstract: 1S1304 1S1329 itk 120-2 1S12 1S130 1S1305 1S1324 1S1325 1S1327
Text: - Mï tt « 1S1261R 1S 12 6 2 1S1262R 1S1263 1S1263B 1S 12 6 4 1S1264R 1S1265 1S1265R 1 S 12 6 6 1S1266R 1S1267 1S1267R 1S1268 1S1268R 1S1269 1S1269R 1S1270 1S1270R 1S 12 71 1S1271R 1S1272 1S1272R 1S1297 1S 12 98 1S 12 9 9 1S 130 4 1S 130 4 1S 1304 1S1304
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1s1261r
50x50x1.
1s1262r
1s1263
1s1263r
1S1330
1S1304
1S1329
itk 120-2
1S12
1S130
1S1305
1S1324
1S1325
1S1327
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smm 300
Abstract: 1S1304 1S12 1S130 1S1305 1S1324 1S1325 1S1327 1S1328 1S1329
Text: - Mï tt « 1S1261R 1S 12 6 2 1S1262R 1S1263 1S1263B 1S 12 6 4 1S1264R 1S1265 1S1265R 1 S 12 6 6 1S1266R 1S1267 1S1267R 1S1268 1S1268R 1S1269 1S1269R 1S1270 1S1270R 1S 12 71 1S1271R 1S1272 1S1272R 1S1297 1S 12 98 1S 12 9 9 1S 130 4 1S 130 4 1S 1304 1S1304
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1s1261r
50x50x1.
1s1262r
1s1263
1s1263r
smm 300
1S1304
1S12
1S130
1S1305
1S1324
1S1325
1S1327
1S1328
1S1329
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PDF
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2SD2350
Abstract: 2SD234 2SB435 8D234 2sc234 transistor 8d234 8D235 8sd2 2SC235 2SC235 O
Text: 34 g 35 g S/U 3 SILICON NPN DIFFUSED JUNCTION TRANSISTOR o i o s a * * * * « « INDUSTRIAL APPLICATIONS O o » U n it in mm Power A m p l i f i e r A p p l i c a t i o n s 0Z.6±&2 Sw itch in g A p p l i c a t io n s 5 : VCE B a t = 0.2V (T y p .) CIc = l A 5
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zsd234g
2sd235
2SB434Ã
2SB435Â
28B434Â
2BD234Â
28D235Â
2SD234Â
2SD2350
2SD234
2SB435
8D234
2sc234
transistor 8d234
8D235
8sd2
2SC235
2SC235 O
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation
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KTB988
KTD1351.
50x50xlmm
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PDF
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KTD2058 Y
Abstract: KTD2058 KTB1366
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)
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KTD2058
KTB1366.
220IS
50x50xlmm
KTD2058 Y
KTD2058
KTB1366
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PDF
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fm antenna diversity
Abstract: 114KHZ KIA2027F KIA2039FN resistor land strong KIA2054AF KIA2074F KIA2093F 11FT
Text: KEC KIA2039FN SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT FM ANTENNA DIVERSITY IC The KIA2039FN is a antenna-switch type FM Antenna diversity IC developed for use in car tuners. For diversity, all you need is this IC.
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KIA2039FN
KIA2039FN
KIA2074F
KIA2093F.
114KHz
112KHz
fm antenna diversity
114KHZ
KIA2027F
resistor land
strong
KIA2054AF
KIA2093F
11FT
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PDF
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TA7245BP
Abstract: star delta control board wiring diagram ta7345 Toshiba TA7245BP TA7245F hall sensor 9v 3 pin TA7245BPLB 7245C DIODE 61 BP TA7245CP
Text: TA7245BP/BP LB /CP/F DC MOTOR DRIVER IC. The TA7245BP/CP are 3-phase Bi-directional motor driver IC. It is designed for use VTft, tape deck, floppy disk and record player motor drivers. It contains output power drivers, position sensing circuits, control amplifier and
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-TA7245BP/BP
TA7245BP/CP
TA7245BP/BP
TA7245BP
star delta control board wiring diagram
ta7345
Toshiba TA7245BP
TA7245F
hall sensor 9v 3 pin
TA7245BPLB
7245C
DIODE 61 BP
TA7245CP
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PDF
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itk 120-2
Abstract: 1S12 1S130 1S1304 1S1305 1S1324 1S1325 1S1327 1S1328 1S1329
Text: - Mï tt « 1S1261R 1S 12 6 2 1S1262R 1S1263 1S1263B 1S 12 6 4 1S1264R 1S1265 1S1265R 1 S 12 6 6 1S1266R 1S1267 1S1267R 1S1268 1S1268R 1S1269 1S1269R 1S1270 1S1270R 1S 12 71 1S1271R 1S1272 1S1272R 1S1297 1S 12 98 1S 12 9 9 1S 130 4 1S 130 4 1S 1304 1S1304
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1s1261r
50x50x1.
1s1262r
1s1263
1s1263r
itk 120-2
1S12
1S130
1S1304
1S1305
1S1324
1S1325
1S1327
1S1328
1S1329
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PDF
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Untitled
Abstract: No abstract text available
Text: TA7417F Hall Motor Driver o TA8417F is Hall Motor Driver for 3-phase Full-Wave Low Noise Voltage Control Type Built-in FG Amp Forward/Reverse Control Terminal Built-in Power Supply for Hall Sensor Power Flat Package Operating Power Supply Voltage: V q £=4.0 - 7.0V
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TA7417F
TA8417F
50x50xlmm
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PDF
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transistor A1046
Abstract: A1046 KTA1046 a1046 transistor ktc2026 kec a1046 KtC2026 Y
Text: SEMICONDUCTOR TECHNICAL DATA KTC2026 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : V CE<sat =1.OV Max.) (IC=2A, IB=0.2A). • Complementary to KTA1046. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage
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KTC2026
KTA1046.
220IS
transistor A1046
A1046
KTA1046
a1046 transistor
ktc2026
kec a1046
KtC2026 Y
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD526 TOSHIBA 2SD526 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 10.3MAX. • • • • • High Power Dissipation : P q = 30W Tc = 25°C Good Linearity of hpg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency
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2SD526
2SB596.
961001EAA2'
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PDF
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TA8417F
Abstract: hall current sensor 10A 20A hall current sensor
Text: TAá’4 17F Hall Motor Driver o TA8417F is Hall Motor Driver for 3-phase Full-Wave Low Noise Voltage Control Type Built-in FG Amp Forward/Reverse Control Terminal Built-in Power Supply for Hall Sensor Power Flat Package Operating Power Supply Voltage: V q q =4.0 ~ 7.0V
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OCR Scan
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TA8417F
50x50xlmm
hall current sensor 10A
20A hall current sensor
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PDF
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KTB989
Abstract: KTD1352
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife. • Complementary to KTD1352. T O MILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage
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OCR Scan
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KTB989
KTD1352.
220AB
50x50xlmm
KTB989
KTD1352
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PDF
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