Untitled
Abstract: No abstract text available
Text: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced
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11002A
TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
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T-46-23-15
Abstract: ah rzj IMSM511002AI MSM511002A-1A oki msm
Text: 4bE ]> w • b72454Q 000^534 RTS « O K I J O K I O K I SEMICONDU CT OR GROUP semiconductor_ M SM 511002A _ 1,048,576-WORD x 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The 511002A is a new generation dynam ic RAM organized as 1,048,576 w ords by 1 bit. The
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b72454Ã
MSM511002A
576-WORD
MSM51Ã
02A-70
140ns
468mW
MSM511002A-8A/80
T-46-23-15
ah rzj
IMSM511002AI
MSM511002A-1A
oki msm
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HM511002AP-6
Abstract: T10E
Text: 511002A Series 1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi H M 511002A Series is a C M O S dynamic RAM organized 1,048,576word x 1-bit. H M 511002A has realized higher density, higher performance and vari ous functions by employing 1.3 jum C M OS process technology and some new
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HM511002A
576-word
18-pin
20-pin
HM511002AP-6
T10E
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6791 DRAM INTERFACE LSI G E N E R A L D E S C R IP T IO N MSM6791 can be used as a memory for which DRAM stores a voice data by connecting OKI solidstate recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)
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MSM6791
MSM6791
MSM6788
MSM6688)
MSM511000A,
11001A)
MSM514100A,
14101A)
16M-bit
MSM5116100)
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor 511002A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T h e M S M 5 1 10 0 2 A is a new generation dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e technology used to fabricate the M S M 5 1 10 0 2 A is O K I's C M O S silicon g ate process technology.
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MSM511002A
576-WORD
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TRANSISTOR AH-10
Abstract: MSM511002A-70
Text: 5ÔE D • b?242MÜ D0127fl3 113 H O K I J O K I O K I M S M s e m SEMI CONDUCTOR ic o n d u c t o r ÊROUP ~ T * ' ~ U - 2 3 - i 5 ' 5 1 1 0 0 2 A _ 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The 511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The
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242MG
MSM511002A_
576-WORD
MSM511002A
TRANSISTOR AH-10
MSM511002A-70
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511002A 1M x 1 CM OS Dynamic RAM Static Column P PACKAGE 300 M IL PLASTIC CA SE 707A The 511002A is a 1.0/a CM O S high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit w ords and fabricated with CM O S silicon-gate process
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MCM511002A
MCM511002A
300-mil
511002AP70
511002AP80
MCM511002AP10
611002AJ70
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TC511002A
Abstract: No abstract text available
Text: .1 TENTATIVE D AT A 1 ,048,576 W O R D x 1 BIT D Y N A M I C R A M DESCRIPTION The 511002A P/A J/A Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The 511002A P/A J/A Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
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darm
Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
Text: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)
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MSM6791
MSM6791
MSM6788
MSM6688)
MSM511000A,
MSM511001A)
MSM514100A,
MSM514101A)
16M-bit
MSM5116100)
darm
LM 327 CN
MSM6688
0017H1S
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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511002A
Abstract: No abstract text available
Text: O K I semiconductor 511002A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The 511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the 511002A is OKI's CMOS silicon gate process technology.
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MSM511002A
576-WORD
MSM511002A
IMSM511002A»
511002A
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MCM51100
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511002A 1 M x 1 CMOS Dynamic RAM Static Column P PACKAGE 300 M IL PLASTIC CASE 707A The MCM5110Q2A is a 1.0/i CMOS high-speed, dynamic random access m em ory. It is organized as 1,048,576 one-bit w ords and fabricated w ith CMOS silicon-gate process
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MCM511002A
MCM5110Q2A
MCM511002A
300-mil
300-mil
511002AP70
MCM511002AP80
MCM511002AP10
MCM511002AJ70
MCM511002AJ80
MCM51100
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hitachi HM5
Abstract: HM511002-12 HM511002-10
Text: HM511002S Serles HM51 1002A Series 1048576-word x 1-bit CM OS Dynamic RAM The Hitachi HM511002S/A Series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511002S/A has realized higher density, higher performance and various functions by employing 1.3/jm CMOS process technology and some new
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HM511002S
1048576-word
HM511002S/A
18-pin
20-pin
hitachi HM5
HM511002-12
HM511002-10
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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TMS4C1024
Abstract: TMS4C1024-80 AZ-80 511000 NEC 701 TC511002P-10 tms*1024 18PIN TC51 TC511001C-10
Text: 208 — IM CMC'S X m & : n f» ca D y n a m i c -f • •/ f TRAC max ns TRCY rain (ns) TCAD (ns) TAE min (ns) > RAM (1 0 4 8 5 7 6 x 1 ) y & 1i m 1 8 P I N A M TP min (ns) WCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (fliA) I DD STANDBY
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18PIN
TC511001BFT/BTR-80
T/BTR-60
TC511001C-10
UPD421000C/I
UPD421000C/1A/V-701
uPD421000C/LA/V-80L
UPD421000LA
UPD4210001A-12
uPD421000LA-80
TMS4C1024
TMS4C1024-80
AZ-80
511000
NEC 701
TC511002P-10
tms*1024
TC51
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Untitled
Abstract: No abstract text available
Text: 511002A S eries-1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi 511002A Series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. 511002A has realized higher density, higher performance and vari
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HM511002A
576-word
576word
18-pin
20-pin
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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OCR Scan
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PDF
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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Untitled
Abstract: No abstract text available
Text: 511002A Series-1,048,576-word x 1-bit CM O S Dynamic RAM • DESCRIPTION 511002AP Series The Hitachi 511002A Series is a C M O S dynamic R AM organized 1,048,576word x 1-bit. 511002A has realized higher density, higher performance and vari
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HM511002A
576-word
576word
18-pin
20-pin
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